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				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S281633D-RL
OCR Text	... Data Input Register LDQM bank Select 2M x 16 Sense AMP 2M x 16 2M x 16 2M x 16 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer Latency & Burst Lengt...
Description	IC REG ULDO DUAL 2.8/1.5V 6-MLF 8Mx16 SDRAM 54CSP 2M x 16Bit x 4 banks SDRAM in 54CSP Data Sheet
File Size	66.22K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75
OCR Text	... LDQM Data Input Register bank Select 32Mx4 / 16Mx8 / 8Mx16 32Mx4 / 16Mx8 / 8Mx16 32Mx4 / 16Mx8 / 8Mx16 32Mx4 / 16Mx8 / 8Mx16 Refresh Counter Output Buffer Row Decoder Sense AMP Row Buffer DQi Address Register CLK...
Description	512Mb B-die SDRAM Specification
File Size	147.30K / 15 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S560832A-TC_L75 K4S560832A-TC_L80 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L K4S560832A-TC/L75
OCR Text	... LDQM Data Input Register bank Select 8M x 8 Sense AMP 8M x 8 8M x 8 8M x 8 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer Latency & Burst Length LR...
Description	256Mbit SDRAM 8M x 8bit x 4 banks Synchronous DRAM LVTTL IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
File Size	125.57K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S560832B-TC_L75 K4S560832B-TC/L75 K4S560832B-TC/L1L K4S560832B-TC/L1H
OCR Text	...t from 2.7ns to 3ns Changed the bank select address in SIMPLIFIED TRUTH TABLE Notes 4. BA0 Low Low High High BA1 Low High Low High Before bank A bank B bank C bank D After bank A bank C bank B bank D Revision 0.2 (May 30, 2000) * Elimin...
Description	256Mbit SDRAM 8M x 8bit x 4 banks Synchronous DRAM LVTTL
File Size	130.10K / 11 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC750
OCR Text	... Data Input Register LDQM bank Select 8M x 8 8M x 8 8M x 8 8M x 8 Refresh Counter Output Buffer Row Decoder Sense AMP Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer Latency & Burst Length ...
Description	32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 banks Synchronous DRAM LVTTL
File Size	111.63K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C
OCR Text	... LDQM Data Input Register bank Select 8M x 8 Sense AMP 8M x 8 8M x 8 8M x 8 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer Latency & Burst Length LR...
Description	256Mbit SDRAM 8M x 8bit x 4 banks Synchronous DRAM LVTTL
File Size	116.54K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	...LWE LDQM Data Input Register bank Select 16M x 4 / 8M x 8 / 4M x 16 Sense AMP 16M x 4 / 8M x 8 / 4M x 16 16M x 4 / 8M x 8 / 4M x 16 16M x 4 / 8M x 8 / 4M x 16 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Addres...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text	...LWE LDQM Data Input Register bank Select 16M x 4 / 8M x 8 / 4M x 16 Sense AMP 16M x 4 / 8M x 8 / 4M x 16 16M x 4 / 8M x 8 / 4M x 16 16M x 4 / 8M x 8 / 4M x 16 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Addres...
Description	256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	196.59K / 14 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text	... LDQM Data Input Register bank Select 2M x 8 Sense AMP 2M x 8 2M x 8 2M x 8 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer Latency & Burst Length LR...
Description	64Mbit SDRAM 2M x 8Bit x 4 banks Synchronous DRAM LVTTL
File Size	128.76K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text	... LDQM Data Input Register bank Select 2M x 8 Sense AMP 2M x 8 2M x 8 2M x 8 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer Latency & Burst Length LR...
Description	64Mbit SDRAM 2M x 8Bit x 4 banks Synchronous DRAM LVTTL
File Size	127.15K / 10 Page	View it Online	Download Datasheet

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