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1560GL DF22D PTN3361B 4148SPT HE83R142 240000 00208 HT7722S
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  amperes 300-600 Datasheet PDF File

For amperes 300-600 Found Datasheets File :: 5681    Search Time::3.016ms    
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    APT10M07JVR APT10M07

ADPOW[Advanced Power Technology]
Part No. APT10M07JVR APT10M07
OCR Text ...0M07JVR 360 ID, DRAIN CURRENT (amperes) 300 240 6V 180 5.5V 120 60 0 5V 4.5V 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 360 ID, DRAIN CURRENT (amperes) 300 240 180 120 60 TJ = +125C TJ = ...
Description POWER MOS V 100V 225A 0.007 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 72.90K  /  4 Page

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    MJ16018 MJW16018 ON1986

MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
Part No. MJ16018 MJW16018 ON1986
OCR Text ...urrents POWER TRANSISTORS 10 amperes 800 VOLTS 125 AND 175 WATTS IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I I III...300 s, Duty Cycle ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) SWITCHING CHAR...
Description Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 amperes 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE

File Size 366.44K  /  8 Page

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    MMDF2P02E ON2168

Motorola Mobility Holdings, Inc.
Motorola, Inc
Part No. MMDF2P02E ON2168
OCR Text ...seconds DUAL TMOS MOSFET 2.5 amperes 25 VOLTS RDS(on) = 0.250 OHM (R) D CASE 751-05, Style 11 SO-8 S Source-1 Gate-1 Source-2...300 s, Duty Cycle 2%. (3) Switching characteristics are independent of operating junction temperatu...
Description DUAL TMOS MOSFET 2.5 amperes 25 VOLTS 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
From old datasheet system

File Size 273.69K  /  10 Page

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    MMDF2P02HD ON2170

MOTOROLA[Motorola, Inc]
Part No. MMDF2P02HD ON2170
OCR Text ... * * DUAL TMOS POWER FET 2.0 amperes 20 VOLTS RDS(on) = 0.160 OHM TM D CASE 751-05, Style 11 SO-8 G S Source-1 Gate-1 Source-2 Gate...300 s, Duty Cycle 2%. (3) Switching characteristics are independent of operating junction temperatu...
Description From old datasheet system
DUAL TMOS POWER FET 2.0 amperes 20 VOLTS

File Size 256.92K  /  10 Page

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    MMFT3055VL MMFT3055VL_D ON2227 MMFT3055VLT3

MOTOROLA INC
Motorola, Inc.
ON Semi
Part No. MMFT3055VL MMFT3055VL_D ON2227 MMFT3055VLT3
OCR Text ...MFT3055VL TMOS POWER FET 1.5 amperes 60 VOLTS RDS(on) = 0.140 OHM D 4 G S 1 2 3 CASE 318E-04, Style 3 TO-261AA Symbol VDSS VDGR VGS...300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperatu...
Description 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
TMOS POWER FET 1.5 amperes 60 VOLT
N-hannel Enhancement-ode Silicon Gate
From old datasheet system

File Size 223.69K  /  10 Page

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    MRA4005T1 MRA4004 MRA4004T3 MRA4004T3G MRA4003 MRA4003T3 MRA4003T3G MRA4007T3G MRA4005 MRA4005T3 MRA4006 MRA4006T3 MRA40

ONSEMI[ON Semiconductor]
Part No. MRA4005T1 MRA4004 MRA4004T3 MRA4004T3G MRA4003 MRA4003T3 MRA4003T3G MRA4007T3G MRA4005 MRA4005T3 MRA4006 MRA4006T3 MRA4007 MRA4007T3
OCR Text ...TANDARD RECOVERY RECTIFIERS 1.0 amperes 300-1000 VOLTS Leads are Readily Solderable MARKING DIAGRAM R1x ALYWG ORDERING INFORMATION Device MRA4003T3 MRA4003T3G MRA4004T3 MRA4004T3G MRA4005T1 MRA4005T3 MRA4006T3 MRA4007T3 MRA4007T3...
Description Surface Mount Standard Recovery Power Rectifier 1 A, 600 V, SILICON, SIGNAL DIODE
1A 600V Standard Recovery Rectifier
1A 400V Standard Recovery Rectifier
1A 800V Standard Recovery Rectifier
1A 1000V Standard Recovery Rectifier

File Size 54.31K  /  4 Page

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    MTD2955E

Motorola, Inc
Part No. MTD2955E
OCR Text ...red Device TMOS POWER FET 12 amperes 60 VOLTS RDS(on) = 0.3 OHM (R) G CASE 369A-13, Style 2 DPAK S Symbol VDSS VDGR VGS VGSM ID ...300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperatu...
Description TMOS POWER FET 12 amperes 60 VOLTS RDS(on) = 0.3 OHM

File Size 243.36K  /  10 Page

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    MTD2955V

MOTOROLA[Motorola, Inc]
Part No. MTD2955V
OCR Text ... MTD2955V TMOS POWER FET 12 amperes 60 VOLTS RDS(on) = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate TM D G S CASE 369A-...300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperatu...
Description TMOS POWER FET 12 amperes 60 VOLTS RDS(on) = 0.230 OHM

File Size 145.17K  /  10 Page

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    QRS1460T30

POWEREX[Powerex Power Semiconductors]
Part No. QRS1460T30
OCR Text ... Fast Recovery Diode Module 600 amperes / 1400 Volts QRS 1 Features: Fast Recovery Time Isolated Mounting Metal Baseplate Low Thermal ...300 Units mA Volts ns C Thermal Characteristics, TJ=25C unless otherwise specified Characteristi...
Description Fast Recovery Diode Module (600 Amp/1400 Volts)

File Size 110.49K  /  3 Page

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    AD795JN AD795JR AD795KN AD795

AD[Analog Devices]
Part No. AD795JN AD795JR AD795KN AD795
OCR Text ... 10-4 INPUT BIAS CURRENT - amperes 0.95 10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 10-13 10-14 -6 -IIN +IIN INPUT BIAS C...300 200 100 0 -15 120 POWER SUPPLY REJECTION - dB 100 +PSRR -PSRR 80 60 40 20 0...
Description Low Power/ Low Noise Precision FET Op Amp
Low Power, Low Noise Precision FET Op Amp

File Size 323.36K  /  16 Page

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For amperes 300-600 Found Datasheets File :: 5681    Search Time::3.016ms    
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