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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50HM75FT3G
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| OCR Text |
75m typ @ Tj = 25C ID = 46A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
18 22 19 Q2 23 8 Q4 7
11
10
26
4 3 29 15 30 31 R1 32 16
27
28 27 26 25 29 30
23... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
298.47K /
6 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50HM75FTG
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| OCR Text |
75m typ @ Tj = 25C ID = 46A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
G1 S1 Q2 O UT1 O UT2 Q4
G3 S3
G2 S2 NT C1 0/VBUS NT C2
G4 S4
Features * Power MOS 7(R) F... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
291.91K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50HM75SCTG
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| OCR Text |
75m typ @ Tj = 25C ID = 46A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanc... |
| Description |
Full bridge Series & SiC parallel diodes MOSFET Power Module
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| File Size |
305.67K /
8 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50HM75STG
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| OCR Text |
75m typ @ Tj = 25C ID = 46A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies
Q1
CR1B
CR3B
Q3
G1 S1 CR2A O UT1 O UT2 CR4A
G3 S3
Q2
CR2B
CR4B
Q4
G2 S2 NTC... |
| Description |
Full bridge Series & parallel diodes MOSFET Power Module
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| File Size |
284.77K /
6 Page |
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it Online |
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IMP[IMP, Inc]
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| Part No. |
C3017
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| OCR Text |
... 3.0m 12m 2.5m 1.5m 1.0m 1.0m 1.75m 1.5m 100x100m 5.0m 80.0 m
Special Feature of C3017 Process: P-well analog process with double metal CMOS 3.0 m technology.
Second metal
VIA
Metal 1
Poly gate
A1
SIO2 LTO
p+
n+
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| Description |
10 Volt Analog Mixed Mode
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| File Size |
29.16K /
2 Page |
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Sumida, Corp.
SUMIDA[Sumida Corporation]
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| Part No. |
CDRH5D28R CDRH5D18 CDRH5D28 CDRH5D28R-8R0NB CDRH5D28R-8R0NC CDRH5D18NP100NC SUMIDACORP-CDRH5D28-120NB CDRH5D28-120NC
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| OCR Text |
...71.6m( 53m) 82.4m( 61m) 101.5m( 75m) 119.0m( 88m) 146.0m(108m) 182.5m(135m) 209.5m(155m) 229.5m(170m) 305.0m(226m) 351.0m(260m) 418.5m(310m) 520.0m(385m) 1.30 1.20 1.10 1.05 950m 850m 760m 680m 600m 550m 480m 450m 400m 53m( 39m) 1.60 96m( 7... |
| Description |
1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
SMD Shielded Power Inductor 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 8 uH, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS
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| File Size |
93.35K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDFS6N754
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| OCR Text |
...VGS = 0V, ID = 4A Max rDS(on) = 75m at VGS = 4.5V, ID = 3.5A VF < 0.45V @ 2A VF < 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design fle... |
| Description |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56mOHM
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| File Size |
323.42K /
7 Page |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FMA219
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| OCR Text |
...h
150pF capacitor To +VDD
75m nominal gap on each side 250m Au ribbon recommended
Notes: * Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond tool force shall be 35-38 gram.... |
| Description |
X-BAND LNA MMIC
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| File Size |
325.92K /
5 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD1000V
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| OCR Text |
...E (m): 650 x 800 DIE THICKNESS: 75m BONDING PADS (m): >70 x 65
The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD10... |
| Description |
1W POWER PHEMT
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| File Size |
194.57K /
3 Page |
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it Online |
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