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  3500v Datasheet PDF File

For 3500v Found Datasheets File :: 11118    Search Time::1.796ms    
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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text ... Capacitance Total Gate Charge 3 APT50M50JVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT pF 16300 2210 850 675...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text ... Capacitance Total Gate Charge 3 APT50M50JVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 16300 2210 850 675 95 32...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ...ps 500 89 0.050 250 1000 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-7115 Rev- 9-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VG...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT50M50L2LL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2LL
OCR Text ...mps 500 87 0.050 100 500 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-7043 Rev- 5-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VG...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT50M50 APT50M50PVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50 APT50M50PVR
OCR Text ... Capacitance Total Gate Charge 3 APT50M50PVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 16300 2210 850 690 95 32...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 74.5A 0.050 Ohm

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    APT50M60JN

ADPOW[Advanced Power Technology]
Part No. APT50M60JN
OCR Text ... Capacitance Total Gate Charge 3 APT50M60JN Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 11640 2230 800 475 68 2...
Description POWER MOS IV 500V 71A 0.060 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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    APT50M60L2VFR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VFR
OCR Text ... Capacitance Total Gate Charge 3 APT50M60L2VFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS VGS = 15V MIN TYP MAX UNIT pF 12000 1600 610 500 80 210 20 25 80 8 nC Gate-Source Charge Turn-on Delay Time Ris...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT50M60L2VR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VR
OCR Text ... Capacitance Total Gate Charge 3 APT50M60L2VR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = 0.5 ID[Cont.] @ 25C VGS = 15V MIN TYP MAX UNIT 12000 1600 610 500 80 20 25 80 8 nC pF Gate-Source Charge ...
Description POWER MOS V 500V 77A 0.060 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT50M65 APT50M65B2FLL APT50M65LFLL

ADPOW[Advanced Power Technology]
Part No. APT50M65 APT50M65B2FLL APT50M65LFLL
OCR Text ...ps 500 67 0.065 250 1000 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-7031 Rev- 3-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VG...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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    CTA51AS3024VDC1.6E CTA51AS3024VDC1.6S CTA51AS3024VDC1.9E CTA51AS3024VDC1.9S CTA51BS3024VDC1.6E CTA51BS3024VDC1.6S CTA51B

CIT Relay & Switch
ETC
Electronic Theatre Controls, Inc.
Part No. CTA51AS3024VDC1.6E CTA51AS3024VDC1.6S CTA51AS3024VDC1.9E CTA51AS3024VDC1.9S CTA51BS3024VDC1.6E CTA51BS3024VDC1.6S CTA51BS3024VDC1.9E CTA51BS3024VDC1.9S CTA51CS3024VDC1.6E CTA51CS3024VDC1.6S CTA51CS3024VDC1.9E CTA51CS3024VDC1.9S CTA51CO4024VDC1.6E CTA51CO4024VDC1.6S CTA51CO4024VDC1.9E CTA51CO4024VDC1.9S CTA51CS306VDC1.6E CTA51CS306VDC1.6S CTA51CS306VDC1.9E CTA51CS306VDC1.9S CTA51BC306VDC1.6E CTA51BC306VDC1.6S CTA51BC306VDC1.9E CTA51BC306VDC1.9S CTA51CC306VDC1.6E CTA51CC306VDC1.9E CTA51CC306VDC1.6S CTA51CC306VDC1.9S CTA51BC3012VDC1.6E CTA51BC3012VDC1.9E CTA51BC3012VDC1.6S CTA51BC3012VDC1.9S CTA51BC3018VDC1.6E CTA51BC3018VDC1.6S CTA51BC3018VDC1.9E CTA51BC3018VDC1.9S CTA51AC1524VDC1.6E CTA51AC1524VDC1.6S CTA51AC1524VDC1.9E CTA51AC1524VDC1.9S CTA51AO1512VDC1.6E CTA51AO1512VDC1.6S CTA51AO1512VDC1.9E CTA51AO1512VDC1.9S CTA51AO1518VDC1.6E CTA51AO1518VDC1.6S CTA51AO1518VDC1.9E CTA51AO1518VDC1.9S CTA51BO1512VDC1.6E CTA51BO1512VDC1.6S CTA51BO1512VDC1.9E CTA51BO1512VDC1.9S CTA51BO1518VDC1.6E CTA51BO1518VDC1.6S CTA51BO1518VDC1.9E CTA51BO1518VDC1.9S CTA51CO1512VDC1.6E CTA51CO1512VDC1.6S CTA51CO1512VDC1.9E CTA51CO1512VDC1.9S CTA51CO1518VDC1.6E CTA51CO1518VDC1.6S CTA51CO1518VDC1.9S CTA51CO1518VDC1
OCR Text ... 42.6 75.8 170.5 303.2 4.2 6.3 8.4 12.6 16.8 0.6 0.9 1.2 1.8 2.4 1.6 or 1.9 5 3 CAUTION: 1. The use of any coil voltage le...500V rms min. @ sea level 200m/s2 for 11ms 1.27mm double amplitude 10-40Hz 10N -40 C to + 85 C -40 C...
Description Dual Inverter Buffer/Driver with Open-Drain Output 6-SC70 -40 to 85
POLARIZED DIP SINGLE SIDE STABLE RELAY
Dual 2-Input NAND Gate with Schmitt-Trigger Inputs 8-DSBGA -40 to 85
Single Positive-Edge-Triggered D-Type Flip-Flop with Clear and Preset 8-DSBGA -40 to 85
Dual Buffer/Driver With 3-State Outputs 8-DSBGA -40 to 85
Dual Inverter 6-SC70 -40 to 85
Dual Inverter 6-SOT-23 -40 to 85
Dual Positive-Edge-Triggered D-Type Flip-Flop 8-SM8 -40 to 85
Dual Schmitt-Trigger Buffer 6-DSBGA -40 to 85
Dual Buffer/Driver With 3-State Outputs 8-SM8 -40 to 85
Dual Bus Buffer Gate With 3-State Outputs 8-DSBGA -40 to 85
Dual Schmitt-Trigger Buffer 6-SC70 -40 to 85
Variable Frequency Drive Cable; Number of Conductors:4; Conductor Size AWG:10; No. Strands x Strand Size:105 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes
Paired Cable; Number of Conductors:8; Conductor Size AWG:23; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Approval Categories:CMR Rated; Features:Bonded-Pair; Augmented Category 6, CMR Rated; Jacket Color:Blue RoHS Compliant: Yes
Variable Frequency Drive Cable; Number of Conductors:4; Conductor Size AWG:16; No. Strands x Strand Size:26 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes
Dual 2-Input Positive-NOR Gate 8-SM8 -40 to 85
Circular Connector; No. of Contacts:37; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
Circular Connector; No. of Contacts:18; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
Single 2-Line to 1-Line Data Selector/Multiplexer 8-SM8 -40 to 85
Dual Inverter Buffer/Driver with Open-Drain Output 6-DSBGA -40 to 85
Enhanced Product Dual Inverter Gate 6-SC70 -55 to 125
Variable Frequency Drive Cable; Number of Conductors:3; Conductor Size AWG:12; No. Strands x Strand Size:65 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes
Paired Cable; Number of Conductors:8; Conductor Size AWG:23; Jacket Material:LSPVC; Number of Pairs:4; Approval Categories:CMP (Plenum) Rated; Features:Bonded-Pair; Augmented Category 6, CMP (Plenum) Rated; Jacket Color:Blue RoHS Compliant: Yes
Dual Inverter Buffer/Driver with Open-Drain Output 6-SOT-23 -40 to 85
Paired Cable; Number of Conductors:8; Conductor Size AWG:23; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Approval Categories:CMR Rated; Features:Bonded-Pair; Augmented Category 6, CMR Rated; Jacket Color:White RoHS Compliant: Yes
Paired Cable; Number of Conductors:8; Conductor Size AWG:23; Jacket Material:LSPVC; Number of Pairs:4; Approval Categories:CMP (Plenum) Rated; Features:Bonded-Pair; Augmented Category 6, CMP (Plenum) Rated; Jacket Color:White RoHS Compliant: Yes
Dual Inverter 6-SOT -40 to 85
Dual Schmitt-Trigger Buffer 6-SOT-23 -40 to 85
CIT RELAY 创新科技署署长继电器
LJT 19C 19#20 SKT RECP 创新科技署署长继电器
POLARIZED DIP BISTABLE (LATCHING) RELAY 创新科技署署长继电器
5 AMP SUBMINIATURE POWER RELAY 创新科技署署长继电器
Single Positive-Edge-Triggered D-Type Flip-Flop with Clear and Preset 8-SM8 -40 to 85 创新科技署署长继电器
Dual Analog Switch 8-US8 -40 to 85 创新科技署署长继电器
Single 2-Line to 1-Line Data Selector/Multiplexer 8-US8 -40 to 85 创新科技署署长继电器
Single Positive-Edge-Triggered D-Type Flip-Flop with Clear and Preset 8-US8 -40 to 85 创新科技署署长继电器
Dual Positive-Edge-Triggered D-Type Flip-Flop 8-US8 -40 to 85 创新科技署署长继电器
Circular Connector; No. of Contacts:19; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 创新科技署署长继电器
Dual Buffer/Driver With 3-State Outputs 8-US8 -40 to 85 创新科技署署长继电器
Variable Frequency Drive (VFD) Multiconductor Cable; Number of Conductors:3; Conductor Size AWG:14; No. Strands x Strand Size:41 x 30; Jacket Material:Polyethylene; Leaded Process Compatible:Yes; Shielding Coverage:1% RoHS Compliant: Yes 创新科技署署长继电器
Shielded Multiconductor Cable; Number of Conductors:3; Conductor Size AWG:14; No. Strands x Strand Size:41 x 30; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes 创新科技署署长继电器
Dual Bus Buffer Gate with 3-State Outputs 8-US8 -40 to 85 创新科技署署长继电器
Variable Frequency Drive (VFD) Multiconductor Cable; Number of Conductors:3; Conductor Size AWG:16; No. Strands x Strand Size:26 x 30; Jacket Material:Polyethylene; Leaded Process Compatible:Yes; Shielding Coverage:1% RoHS Compliant: Yes 创新科技署署长继电器
Dual 2-Input NAND Gate with Schmitt-Trigger Inputs 8-SM8 -40 to 85 创新科技署署长继电器
SUBMINIATURE ULTRA-SENSITIVE DIP RELAY 创新科技署署长继电器
Dual 2-Input NAND Gate with Schmitt-Trigger Inputs 8-US8 -40 to 85 创新科技署署长继电器
Dual Inverter 6-DSBGA -40 to 85 创新科技署署长继电器

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