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262 144 Datasheet PDF File

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				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5256DP-45LL M5M5256DP-45XL M5M5256DP-55LL M5M5256DP-55XL M5M5256DP-70LL M5M5256DP-70XL M5M5258VP M5M5260RV-55LL M5M5259RV-45LL M5M5264RV-70XL M5M5257FP M5M5256FP-70LL M5M5256DRV-55LL M5M5256DRV-70LL M5M5256DFP-55LL M5M5256DVP-70LL M5M5256DVP-45LL M5M5256DVP-45XL M5M5256DVP-55LL M5M5256DVP-55XL M5M5256DVP-70XL M5M5256DFP-70LL M5M5256DRV-70XL M5M5256DFP-45LL M5M5256DFP-45XL M5M5256DFP-55XL M5M5256DFP-70XL M5M5256DRV-45LL M5M5256DRV-45XL M5M5256DRV-55XL M5M5256VP-55LL M5M5256VP-55XL M5M5256VP-45LL M5M5256VP-45XL M5M5256RV-45XL M5M5256RV-45LL M5M5256FP-45LL M5M5256FP-45XL M5M5256RV-55LL M5M5256RV-55XL M5M5256RV-70LL M5M5256RV-70XL M5M5256VP-70XL M5M5256FP-70XL
OCR Text	...TION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a ...
Description	262144-BIT CMOS STATIC RAM Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 262144位（32768 - Word位）的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
File Size	61.91K / 7 Page	View it Online	Download Datasheet

				ETC
Part No.	AS7C4098 AS7C4098-12 AS7C4098-12JC AS7C4098-12JI AS7C4098-12TC AS7C4098-12TI AS7C4098-15 AS7C4098-15JC AS7C4098-15JI AS7C4098-15TC AS7C4098-15TI AS7C4098-20 AS7C4098-20JC AS7C4098-20JI AS7C4098-20TC AS7C4098-20TI
OCR Text	...ial temperature * Organization: 262,144 words x 16 bits * Center power and ground pins * High speed - 10/12/15/20 ns address access time - 5/6/7/9 ns output enable access time * Low power consumption: STANDBY - 110 mW (AS7C4098)/max CM...
Description	5V/3.3V 256K 16 CMOS SRAM
File Size	103.19K / 8 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. DALLAS[Dallas Semiconductor] DALLAS[Dallas Semiconducotr] MAXIM - Dallas Semiconductor http://
Part No.	DS1230AB DS1230AB-100 DS1230AB-120 DS1230AB-150 DS1230AB-200 DS1230AB-85 DS1230ABP-100-IND DS1230ABP-120-IND DS1230ABP-150-IND DS1230ABP-200-IND DS1230ABP-85-IND DS1230Y DS1230Y-100 DS1230Y-120 DS1230Y-150 DS1230Y-200 DS1230Y-70 DS1230Y-85 DS1230YP-100-IND DS1230YP-120-IND DS1230YP-150-IND DS1230YP-200-IND DS1230YP-70-IND DS1230YP-85-IND DS1230Y_AB S1230ABP-70-IND S1230AB-70 1230YAB DS1230ABP-100 DS1230ABP-120 DS1230ABP-200 DS1230ABP-70-IND DS1230ABP-85 DS1230YP-120 DS1230YP-150 DS1230YP-70 DS1230YP-85 DS1230ABP-150 DS1230YP-100 DS1230YP-200 DS1230ABP-70 DS1230AB-70 DS1230Y-70-IND DS1230Y-100-IND DS1230Y-120-IND DS1230Y-150-IND DS1230Y-200-IND DS1230Y-85-IND DS1230AB-85-IND DS1230AB-100-IND DS1230AB-120-IND DS1230AB-150-IND DS1230AB-200-IND DS1230AB-70-IND DS1230AB-100IND DS1230AB-120IND DS1230AB-150IND DS1230AB-200IND DS1230AB-70IND DS1230AB-85IND DS1230AB-P100 DS1230AB-P100IND DS1230AB-P120 DS1230AB-P120IND DS1230AB-P150 DS1230AB-P150IND DS1230AB-P200 DS1230AB-P200IND DS1230AB-P70 DS1230AB-P70IND DS1230AB-P85 DS9034PC DS1230Y-100IND DS1230Y-120IND DS1230Y-150IND DS1230Y-200IND DS1230Y-70IND DS1230Y-85IND DS1230Y-AB DS1230Y-P100 DS1230Y-P100IND DS1230Y-P120 DS1230Y-P120IND DS1230Y
OCR Text	...1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tole...
Description	32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 256k Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 M39012 MIL RF CONNECTOR 256k非易失SRAM 256k Nonvolatile SRAM 256k非易失SRAM GT 6C 3#0 3#12 PIN PLUG Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GTS; No. of Contacts:48; Connector Shell Size:36; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight M39012 MIL RF CAP Isolation Transformer Low-Noise, High-Speed, 16-Bit Accurate CMOS Operational Amplifier 8-MSOP -40 to 125 From old datasheet system 256K Nonovolatile SRAM 3.3V 256k Nonvolatile SRAM
File Size	212.41K / 12 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconducotr]
Part No.	DS1230 DS1230W DS1230WP-150-IND 1230W DS1230W-100 DS1230W-150 DS1230WP-150
OCR Text	...3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-toler...
Description	3.3V 256k Nonvolatile SRAM 3.3V 256K Nonovolatile SRAM From old datasheet system
File Size	212.82K / 11 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM62V16256B HM62V16256BLTT-7 HM62V16256BLTT-7SL HM62V16256BLTT-8 HM62V16256BLTT-8SL HM62V16256BSERIES
OCR Text	... is 4-Mbit static RAM organized 262,144-word x 16-bit. HM62V16256B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; ther...
Description	4 M SRAM (256-kword x 16-bit)
File Size	71.17K / 16 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM62V16256CI HM62V16256CLTTI-7
OCR Text	... is 4-Mbit static RAM organized 262,144-word x 16-bit. HM62V16256CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standb...
Description	Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) 宽温版本4 M的SRAM56 - KWord的x 16位）
File Size	76.13K / 18 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM62V16256C HM62V16256CLTT-5 HM62V16256CLTT-5SL HM62V16256CLTT-7 HM62V16256CLTT-7SL
OCR Text	... is 4-Mbit static RAM organized 262,144-word x 16-bit. HM62V16256C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby...
Description	4 M SRAM (256-kword x 16-bit) 四米的SRAM56 - KWord的x 16位）
File Size	75.24K / 18 Page	View it Online	Download Datasheet

				Integrated Silicon Solu... Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
Part No.	IS41LV16256-35K IS41LV16256-35T IS41LV16256-60K IS41LV16256-60KI IS41LV16256-60T IS41LV16256-60TI IS41C16256 IS41C16256-35K IS41C16256-35T IS41C16256-50KI IS41C16256-50TI IS41C16256-60K IS41C16256-60KI IS41C16256-60T IS41C16256-60TI
OCR Text	... IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle ...
Description	256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 60 ns, PDSO40 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 35 ns, PDSO40
File Size	151.22K / 19 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM68257EI-10 KM68257EI-12 KM68257EI-15 KM68257ETGI-10 KM68257ETGI-12 KM68257ETG-15
OCR Text	... DESCRIPTION The KM68257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68257E uses 8 common input and output lines and has an output enable pin which operates faster than address access...
Description	32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns 32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作 32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
File Size	165.73K / 8 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH5PV16256
OCR Text	262,144 words x 16 bit organization * Power supply: +3.0 0.15 V * Access time: 120 ns (MAX.) * Cycle time: 190 ns (MIN.) * Power consumption (MAX.): 126 mW (Operating) 94.5 W (Standby = CMOS input level) 220.5 W (Self-refresh = CMOS input ...
Description	CMOS 4M (256K x 16) Pseudo-Static RAM
File Size	114.97K / 14 Page	View it Online	Download Datasheet

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