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Maxim
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| Part No. |
MAX3875EVKIT
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| OCR Text |
...es evaluation of the MAX3875, a 2.5Gbps clock-recovery and data-retiming IC. The EV kit enables testing of all MAX3875 functions. SMA connectors are provided for the differential PECL-compatible data and clock outputs, as well as system loo... |
| Description |
Evaluation Kit for the MAX3875
From old datasheet system
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| File Size |
194.52K /
6 Page |
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RF Micro Devices, Inc.
RFMD[RF Micro Devices]
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| Part No. |
RF2373 RF2373PCK- RF2373PCK-414
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| OCR Text |
...lifier
0.15 0.05 0.400
1
2.90 + 0.10
0.950
2.80 + 0.20 3 MAX 0 MIN 0.45 + 0.10 0.127
1.44 1.04
Dimensions in mm.
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET ... |
| Description |
3V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER 3V的低噪声放大 3V的驱动放大器
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| File Size |
129.84K /
8 Page |
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it Online |
Download Datasheet |
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Zarlink
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| Part No. |
ZL40803 414
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| OCR Text |
2
Data Sheet Features
* * * * * * 3.45V Single Supply Operation Low Power Dissipation: 250mW typ Broadband: DC to 6GHz SSB Phase Noise: -1...2
Description
The ZL40803 are Bipolar 3.45V supply, very low power prescalers for professional a... |
| Description |
6 GHz Fixed Modulus ÷ 2
From old datasheet system
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| File Size |
654.80K /
11 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
MGFS45V2123 S452123
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| OCR Text |
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guara... |
| Description |
2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
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| File Size |
24.72K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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