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Infineon
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Part No. |
SPB21N10
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OCR Text |
... mj reverse diode d v /d t i s =21a, v ds =80v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 104 w operating and storage temperature t j , t st g -55... +175 c iec climat... |
Description |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=85mOhm, 21A, NL
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File Size |
376.49K /
4 Page |
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SGS-THOMSON
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Part No. |
2N2222A
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OCR Text |
...w 2n 22 18a - 2n 22 19a - 2n 22 21a - 2n 22 22a 2/8
e l e c tri c a l char acte r i s t i c s (continued) s y m bol p a r a m e t e r t e s t c ond i t io n s m i n. ty p . m a x . u n it h fe small signal curre nt g ain i c =1 m a f = 1 ... |
Description |
HIGH SPEED SWITCHES
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File Size |
190.48K /
8 Page |
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it Online |
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ANPEC Electronics Corporation ANPEC[Anpec Electronics Coropration]
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Part No. |
APM4408 APM4408KC-TR APM4408KC-TU
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OCR Text |
21A, RDS(ON) = 3.5m(typ.) @ VGS = 10V RDS(ON) = 5m(typ.) @ VGS = 4.5V RDS(ON) = 8m(typ.) @ VGS = 2.5V
Pin Description
S S S G 1 2 3 4 8 7 6 5 D D D D
* * *
High Density Cell Design Reliable and Rugged SO-8 Package SO - 8
D
App... |
Description |
20 V, N-channel enhancement mode MOSFET
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File Size |
118.73K /
9 Page |
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it Online |
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Advanced Power Technology Ltd.
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Part No. |
APT6030SVR
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OCR Text |
...sfet apt6030bvr apt6030svr 600v 21a 0.300 ? ? ? ? ? caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com characteristic / test conditions... |
Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
112.01K /
4 Page |
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it Online |
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Price and Availability
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