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1N4140 TFS400B DATA28 SCS220AE 25A6GTG KBJ20D MX29L ADISEVAL
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  2-10u1b Datasheet PDF File

For 2-10u1b Found Datasheets File :: 160    Search Time::1.188ms    
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    TK19A45D

Toshiba Semiconductor
Part No. TK19A45D
OCR Text ...) ? enhancement-mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbo...10u1b weight : 1.7 g (typ.) 1 3 2 internal connection 1: gate 2: drain 3: source tk19a45d ...
Description Switching Regulator Applications

File Size 196.66K  /  6 Page

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    TK8A50DA

Toshiba Semiconductor
Part No. TK8A50DA
OCR Text ...) ? enhancement-mode: v th = 2.4 to 4.4 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbo...10u1b weight : 1.7 g (typ.) 1 3 2 internal connection start of commercial production 2009-07 t...
Description Field Effect Transistor
Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 206.04K  /  6 Page

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    TK5A55D

Toshiba Semiconductor
Part No. TK5A55D
OCR Text ... transfer admittance: |y fs | = 2.4 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 550 v) ? enhancement mode: v th = 2....10u1b weight: 1.7 g (typ.) characteristics symbol max unit thermal resistance, channel to case r ...
Description Field Effect Transistor
Switching Regulator Applications

File Size 184.10K  /  6 Page

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    TK5A53D

Toshiba Semiconductor
Part No. TK5A53D
OCR Text ...e on-resistance: r ds (on) = 1.2 ? (typ.) ? high forward transfer admittance: |y fs | = 2.8 s (typ.) ? low leakage current: i dss = 1...10u1b weight: 1.7 g (typ.) characteristics symbol max unit thermal resistance, channel to case r ...
Description Switching Regulator Applications

File Size 184.95K  /  6 Page

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    TK4A55DA

Toshiba Semiconductor
Part No. TK4A55DA
OCR Text ...rce on-resistance: r ds (on) = 2.0 ? (typ.) ? high forward transfer admittance: |y fs | = 1.8 s (typ.) ? low leakage current: i dss =...10u1b weight: 1.7 g (typ.) characteristics symbol max unit thermal resistance, channel to case r ...
Description Switching Regulator Applications
   Switching Regulator Applications

File Size 185.31K  /  6 Page

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    Toshiba
Part No. K4042
OCR Text ... ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol ...10u1b weight : 1.7 g (typ.) 1 3 2 2sk4042 2009-09-29 2 electrical characteristics (ta = ...
Description Field Effect Transistor

File Size 208.48K  /  6 Page

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    TOSHIBA
Part No. TK9A45D
OCR Text ...) ? enhancement-mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbo...10u1b weight : 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source internal connection start of com...
Description Power MOSFET (N-ch 250V<VDSS≤500V)

File Size 207.53K  /  6 Page

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    TK9A60D

Toshiba Semiconductor
Part No. TK9A60D
OCR Text ...) ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics sym...10u1b weight: 1.7 g (typ.) characteristics symbol max unit thermal resistance, channel to case r ...
Description Field Effect Transistor
Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 185.87K  /  6 Page

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Part No. 2SK3567
OCR Text ... transfer admittance: |y fs | = 2.5s (typ.) ? low leakage current: i dss = 100 a (v ds = 600 v) ? enhancement mode: v th = 2.0~4.0 ...10u1b weight : 1.7 g (typ.) 1 3 2 2sk3567 2004-07-01 2 electrical characteristics (ta = ...
Description 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 222.92K  /  6 Page

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    TOSHIBA
Part No. TK12A53D
OCR Text ... ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbo...10u1b weight: 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source internal connection start of comm...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 175.99K  /  6 Page

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For 2-10u1b Found Datasheets File :: 160    Search Time::1.188ms    
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