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ELPIDA MEMORY INC
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| Part No. |
UPD4516421AG5-A10L-9NF
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| OCR Text |
...16 : x16 1 : lvttl r note ( 1 : 1bank) 4 : x4 8 : x8 16 : 16m bits 1 : 2bank, lvttl g5 : tsop(ii) a : 3.3 0.3 v 80 : 8 ns (125 mhz) 10 : 10 ns (100 mhz) 12 : 12 ns (83 mhz) 2 : 2bank version
data sheet e0122n10 4... |
| Description |
4M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO44
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| File Size |
1,113.43K /
88 Page |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5W2A6CSF-HF HY5W2A6CSF-SF
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| OCR Text |
...f a quarter bank, a half bank, 1bank, 2banks, or all banks, temperature compensated self refresh of 15, 45, 70, or 85 degrees c. a burst of read or write cycles in pr ogress can be terminated by a burst terminate command or can be interru... |
| Description |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
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| File Size |
409.23K /
24 Page |
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it Online |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
S8S3122X16-TCR2 S8S3122X16 S8S3122X16-TCR1 DSS8S3122X16
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| OCR Text |
...z Full Cutting
(6) Bank
1 : 1bank 3 : 4Bank 5 : 16Bank 2 : 2Bank 4 : 8Bank 6 : 32Bank
(15) Speed(Wafer/Chip Biz A0A ) O
UDO E 1 : 100ns 3 : 60ns UDRAM S 1 : 10ns 3 : 7ns 2 : 80ns 4 : 50ns
(7) Interface ( VDD, VDDQ )
1 : TTL,5.... |
| Description |
256K x 16 SDRAM
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| File Size |
1,160.65K /
44 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
S8S3122X16-TCR1
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| OCR Text |
... 41 : 8m,1k/16ms (6) bank 1 : 1bank 2 : 2bank 3 : 4bank 4 : 8bank 5 : 16bank 6 : 32bank (7) interface ( vdd, vddq ) 1 : ttl,5.0v,5.0v 2 : lvttl,3.3v,3.3v 3 : lvttl,3.0v,3.0v 4 : lvttl,2.5v,2.5v 0 : none,none,none (8) version x : 1st gene... |
| Description |
256K x 16 SDRAM
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| File Size |
1,174.51K /
44 Page |
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it Online |
Download Datasheet |
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Price and Availability
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