|
|
|
http:// INTERSIL[Intersil Corporation] Intersil, Corp.
|
Part No. |
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9315TMI-2.7 X9315TMIZ X9315TMIZ-2.7 X9315TMZ X9315TMZ-2.7 X9315TP X9315TP-2.7 X9315TPI X9315TPI-2.7 X9315TS X9315TS-2.7 X9315TSI X9315TSI-2.7 X9315TSIZ X9315TSIZ-2.7 X9315TSZ X9315TSZ-2.7 X9315UM X9315UM-2.7 X9315UMI X9315UMI-2.7 X9315UMIZ X9315UMIZ-2.7 X9315UMZ X9315UMZ-2.7 X9315UP X9315UP-2.7 X9315UPI X9315UPI-2.7 X9315US X9315US-2.7 X9315USI X9315USI-2.7 X9315USIZ X9315USIZ-2.7 X9315USZ X9315USZ-2.7 X9315WM X9315WM-2.7 X9315WMI X9315WMI-2.7 X9315WMIZ X9315WMZ X9315WMZ-2.7 X9315WP X9315WP-2.7 X9315WPI X9315WPI-2.7 X9315WS X9315WS-2.7 X9315WSI X9315WSI-2.7 X9315WSIZ X9315WSIZ-2.7 X9315WSZ X9315WMIZ-2.7
|
Description |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; transistor type:MOSFET; transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mw 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
|
File Size |
333.42K /
14 Page |
View
it Online |
Download Datasheet |
|
|
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
Part No. |
154-22 153-28 154-18 154-04 154-10 154-14 154-12 154-16 154-26 154-20 154-30 153-30 153-22 153-04 154-08 153-14 154-06 154-24 154-28 153-26 153-18
|
Description |
transistor | BJT | npn | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 transistor | BJT | npn | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 transistor | BJT | npn | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 transistor | BJT | npn | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 transistor | BJT | npn | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 transistor | BJT | npn | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 transistor | BJT | npn | 260V V(BR)CEO | 7.5A I(C) transistor | BJT | npn | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 transistor | BJT | npn | 300V V(BR)CEO | 7.5A I(C) transistor | BJT | npn | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 transistor | BJT | npn | 240V V(BR)CEO | 7.5A I(C) transistor | BJT | npn | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 transistor | BJT | npn | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 transistor | BJT | npn | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
File Size |
211.14K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
Central Semiconductor, Corp. Microsemi, Corp.
|
Part No. |
2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2N781 2N796 2N772 2N794 2N777 2N740 2N775 2N779A 2N498 2N658 2N521A 2N778 2N524A 2N735A 2N511B 2N512B 2N514B 2N736B 2N526A 2N915A 2N527A
|
Description |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset transistor | BJT | PNP | 8V V(BR)CEO | TO-5 transistor | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18 transistor | BJT | PNP | 30V V(BR)CEO | TO-9 transistor | BJT | PNP | 20V V(BR)CEO | TO-9 transistor | BJT | npn | 80V V(BR)CEO | 50MA I(C) | TO-18 transistor | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 transistor | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18 transistor | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18 transistor | BJT | npn | 25V V(BR)CEO | 100MA I(C) | TO-18 transistor | BJT | npn | 15V V(BR)CEO | 100MA I(C) | TO-18 transistor | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 transistor | BJT | npn | 60V V(BR)CEO | 50MA I(C) | TO-18 transistor | BJT | npn | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五(巴西)总裁|8 transistor | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 500mA的一(c)|
|
File Size |
51.18K /
1 Page |
View
it Online |
Download Datasheet |
|
|
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
Part No. |
K4H510438B-ZC/LB0 K4H511638B-ZC/LB0 K4H510838B-ZC/LB3 K4H510438B-ZC/LCC K4H511638B-ZC/LCC K4H510438B-ZC/LA2 K4H510838B-ZC/LA2 K4H511638B-ZC/LA2 K4H510838B-ZC/LB0 K4H510438B-ZC/LB3 K4H511638B-ZC/LB3 K4H510838B-ZC/LCC K4H510438B-GC/LA2 K4H510438B-GC/LB0 K4H510438B-GC/LB3 K4H510438B-GC/LCC K4H510838B-GC/LB3 K4H511638B-GC/LCC K4H510838B-GC/LCC K4H510838B-GC/LB0 K4H511638B-GC/LB0 K4H510838B-GC/LA2 K4H511638B-GC/LA2 K4H511638B-GC/LB3
|
Description |
512Mb B-die DDR SDRAM Specification 512MB的乙芯片DDR SDRAM内存规格 COVER, SIDE ENTRY, 20WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:20; Ways, No. of:20 RoHS Compliant: Yes 512MB的乙芯片DDR SDRAM内存规格 CONN MEMORY CARD HDR CF NORMAL 512MB的乙芯片DDR SDRAM内存规格 CN 68PIN (PC CARD) 512MB的乙芯片DDR SDRAM内存规格 COVER, SIDE ENTRY, 56WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:56; Ways, No. of:56 RoHS Compliant: Yes 512MB的乙芯片DDR SDRAM内存规格 COVER, TOP ENTRY, 90WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:90; Ways, No. of:90 RoHS Compliant: Yes DIODE ZENER SINGLE 500mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-123 3K/REEL DIODE ZENER SINGLE 150mw 18Vz 0.05mA-Izt 0.05 0.05uA-Ir 13.6 SOD-523 3K/REEL DIODE ZENER SINGLE 150mw 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-523 3K/REEL DIODE ZENER SINGLE 200mW 20Vz 0.05mA-Izt 0.05 0.05uA-Ir 15.2 SOD-323 3K/REEL
|
File Size |
385.68K /
24 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|