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  15 25 35a Datasheet PDF File

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    IGP15N60T07 IGP15N60T

Infineon Technologies AG
Part No. IGP15N60T07 IGP15N60T
OCR Text ... Symbol VCE IC Value 600 30 15 Unit V A ICpul s VGE tSC Ptot Tj Tstg 45 45 20 5 130 -40...+175 -55...+175 260 V s W C VGE = ...25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage...
Description Low Loss IGBT in TrenchStop? and Fieldstop technology
Low Loss IGBT in TrenchStop庐 and Fieldstop technology

File Size 398.52K  /  12 Page

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    IKP15N60T07 IKP15N60T

Infineon Technologies AG
Part No. IKP15N60T07 IKP15N60T
OCR Text ... Symbol VCE IC Value 600 30 15 Unit V A ICpul s IF 45 45 30 15 IFpul s VGE tSC Ptot Tj Tstg 45 20 5 130 -40...+175 -55......25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage...
Description Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

File Size 454.22K  /  14 Page

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    SKP10N60A SKP10N60A08

Infineon Technologies AG
Infineon Technologies A...
Part No. SKP10N60A SKP10N60A08
OCR Text ...V , I C =500 A VCE(sat) V G E = 15 V, I C =10A T j = 25C T j = 150 C Diode forward voltage VF VGE=0V, IF=10A T j = 25C T j = 150 C Gate-emit...25 4 6.7 550 62 42 52 7 13 100 max. 2.4 2.8 1.8 1.65 5 Unit V A 40 1500 100 660 75 51 68 A ...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 363.09K  /  14 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STB70NF03L06 STP70NF03L B70NF03L P70NF03L STB70NF03L STB70NF03L-1
OCR Text ...ube July 2006 Rev 10 1/15 www.st.com 15 Contents STB70NF03L - STP70NF03L - STB70NF03L-1 Contents 1 2 Electrical ratings ...25 oC, ID = 35a, VDD = 25V Table 2. Symbol RthJC RthJA Tl Thermal data Parameter Thermal res...
Description N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET

File Size 432.92K  /  15 Page

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    B70NFS03L B70NH03L STB70NFS03L_06 STB70NFS03L

STMICROELECTRONICS[STMicroelectronics]
Part No. B70NFS03L B70NH03L STB70NFS03L_06 STB70NFS03L
OCR Text ...DD = 20V, Tj = 150C (see Figure 15) 42 52 2.5 Test Conditions Min. Typ. Max. Unit 70 280 1.3 A A V ns nC A 1. Pulse width limited by safe...25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.6...
Description N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier
N-channel 60V - 0.0075ohm - 70A - D2PAK STripFET TM III Power MOSFET for DC-DC conversion

File Size 270.92K  /  13 Page

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    HUF75321S3S FN4360 HUF75321P3

Intersil Corporation
Part No. HUF75321S3S FN4360 HUF75321P3
OCR Text ...5 20 35 Figure 4 Figures 6, 14, 15 93 0.625 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . ....25 - 11 55 47 66 - 100 170 ns ns ns ns ns ns Qg(TOT) Qg(10) Qg(TH) Qgs Qgd VGS = 0...
Description 35a, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs(35a, 55V, 0.034 Ω, N沟道UltraFET功率MOS场效应管)
From old datasheet system
35a/ 55V/ 0.034 Ohm/ N-Channel UltraFET Power MOSFETs

File Size 129.92K  /  9 Page

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    IXYS[IXYS Corporation]
Part No. IXSH35N140A
OCR Text ...C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 22 Clamped inductive load VGE = 15 V, VCE = 840 V, TJ = 125C RG = 22 W, non repetitiv...25 V, VGE = 0 V, f = 1 MHz 235 60 120 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 32 50 40 Inductive load,...
Description High Voltage, High speed IGBT - Short Circuit SOA Capability

File Size 517.80K  /  5 Page

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    http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS70KMJ-03 FS10VS-6
OCR Text ...Dimensions in mm 2.8 0.2 15 0.3 f 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 123 2.6 0.2 4V DRIVE VDSS .............................................
Description HIGH-SPEED SWITCHING USE

File Size 41.38K  /  4 Page

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    RLD30P160UF RLD30P185UA RLD30P300UA RLD30P300UF RLD30P135UA RLD30P135UF RLD30P090UA RLD30P090UF RLD30P900UF RLD30P110UA

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LITTELFUSE[Littelfuse]
Part No. RLD30P160UF RLD30P185UA RLD30P300UA RLD30P300UF RLD30P135UA RLD30P135UF RLD30P090UA RLD30P090UF RLD30P900UF RLD30P110UA RLD30P110UF RLD30P160UA RLD30P185UF RLD30P250UA RLD30P250UF RLD30P400UA RLD30P400UF RLD30P500UA RLD30P500UF RLD30P600UA RLD30P600UF RLD30P700UA RLD30P700UF RLD30P800UA RLD30P800UF RLD30P900UA
OCR Text ...5 19.1 21.6 24.1 12.2 14.2 13.5 15.2 15.7 18.3 17.3 20.1 24.9 24.9 26.7 29.2 29.7 5.1 5.1 5.1 5.1 5.1 5.1 5.1 5.1 10.2 10.2 10.2 10.2 10.2 7...25 12.50 15.00 20.00 25.00 30.00 35.00 40.00 40.00 5.9 6.6 7.3 8.0 8.7 10.3 10.8 12.7 14.5 16.0 1...
Description Radial Leaded, 30V

File Size 59.15K  /  2 Page

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    IRGP4069D-EPBF IRGP4069DPBF

International Rectifier
Part No. IRGP4069D-EPBF IRGP4069DPBF
OCR Text ...CE = 18A ICE = 35a ICE = 70A 15 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40C 20 IC, Collector-to-Emit...25 50 Rg () 75 100 0 10 20 30 40 50 RG () Fig. 15 - Typ. Energy Loss vs. RG ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 426.68K  /  11 Page

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