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  1.10m Datasheet PDF File

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    BA7655 BA7655A BA7655AF BA7655A/AF

Rohm
Part No. BA7655 BA7655A BA7655AF BA7655A/AF
OCR Text ... 0.1 1 4 0.3 0.1 0.11 1.27 0.4 0.1 0.3Min. 0.15 2.54 0.5 0.1 0 ~ 15 DIP8 SOP8 4 0.15 0.1 1 4
Description Multimedia LSIs > Multimedia video > VCA for video signal
Dual Voltage-controlled Amplifier

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    FDC6301 FDC6301N

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FAIRCHILD[Fairchild Semiconductor]
Part No. FDC6301 FDC6301N
OCR Text ...1 10 100 300 0.001 Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design. FDC63...
Description Dual N-Channel , Digital FET

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    FDC6302P

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FAIRCHILD[Fairchild Semiconductor]
Part No. FDC6302P
OCR Text ...ansfer Capacitance (Note 2) 11 7 1.4 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay ...0m s 3 SINGLE PULSE RJA =See note 1b TA = 25C 1s DC 2 0.02 0.01 VGS = -2.7V SI...
Description Digital FET, Dual P-Channel
Digital FET/ Dual P-Channel

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    FDC6303 FDC6303N

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FAIRCHILD[Fairchild Semiconductor]
Part No. FDC6303 FDC6303N
OCR Text ...1 10 100 300 0.001 Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design. FDC63...
Description Digital FET, Dual N-Channel

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    FDC6304P

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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
Part No. FDC6304P
OCR Text ...1 10 100 300 0.001 Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design. FDC63...
Description Digital FET, Dual P-Channel
RES 160-OHM 0.1% 0.125W 25PPM THIN-FILM SMD-0805 TR-7-PA ROHS 460 mA, 25 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

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    FDC6306P

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FAIRCHILD[Fairchild Semiconductor]
Part No. FDC6306P
OCR Text ...1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDC6306P Re...
Description Dual P-Channel 2.5V Specified PowerTrench?/a> MOSFET
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET

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    FS6S1265RE FS6S1265RETU FS6S1265REYDTU

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FS6S1265RE FS6S1265RETU FS6S1265REYDTU
OCR Text ...C=10.5V VCC=10.5V , VFB=0V 10.4 11.4 0.7 0.45 40 7.04 11.0 12.0 1.0 0.6 50 8.0 11.6 12.6 1.3 0.75 60 8.96 V V V A kHz A VSS ISS VSYNCH VSYNC...0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation 2. A critical component in any ...
Description Fairchild Power Switch(FPS)
12A/650V Syncronized Power Switch

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    IRF7457

IRF[International Rectifier]
Part No. IRF7457
OCR Text ...--- --- --- --- --- Typ. --- 28 11 10 25 14 16 16 7.5 3100 1600 270 Max. Units Conditions --- S VDS = 16V, ID = 12A 42 ID = 12A 17 nC VDS = 10V 15 VGS = 4.5V, 38 VGS = 0V, VDS = 10V --- VDD = 10V, --- ID = 12A ns --- RG = 1.8 --- VGS = 4.5...
Description Power MOSFET(Vdss=20V, Rds(on)max=7.0mohm, Id=15A)

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    IRF7458 IRF7458TR

IRF[International Rectifier]
Part No. IRF7458 IRF7458TR
OCR Text ...rature Range Max. 30 30 14 11 110 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/C C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 Units C/W No...
Description 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)
Power MOSFET(Vdss=30V/ Rds(on)max=8.0mohm/ Id=14A)

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    IRF7459 IRF7459TR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF7459 IRF7459TR
OCR Text ...kage --- Typ. --- 0.024 6.7 8.0 11 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 9.0 VGS = 10V, ID = 12A 11 m VGS = 4.5V, ID = 9.6A 22 VGS = 2.8V, ID = 6.0A 2.0 V VDS = VGS, ID = 2...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 12A条)

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