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  0.5 11-2.5-z Datasheet PDF File

For 0.5 11-2.5-z Found Datasheets File :: 79073    Search Time::4.547ms    
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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ... VDSS = -100V G S RDS(on) = 0.48 ID = -6.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proce...5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C The...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ... D VDSS = -100V RDS(on) = 0.20 G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ... D VDSS = -100V RDS(on) = 0.20 G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C The...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ... D VDSS = -100V RDS(on) = 0.117 G ID = -23A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ... D VDSS = -100V RDS(on) = 0.117 G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processi...5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C The...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ... N N E L M O S F E T RDS(on) 0.10 0.25 T o p V iew Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 ...5 2.8 16 1.7 N-Channel Maximum P-Channel 30 20 -2.3 -1.8 -10 -1.3 2.0 1.3 57 -1.3 0.25 Un...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ...V 3 4 6 5 RDS(on) = 0.25 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast ...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ... 3 6 4 5 RDS(on) = 0.10 T o p V iew Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...l D VDSS = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...5 -48 3.8 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ ...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...l D VDSS = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...5 -48 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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For 0.5 11-2.5-z Found Datasheets File :: 79073    Search Time::4.547ms    
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