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全宇昕科技股份有限公司
CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
BZ5239CCN3 29A 29C BZ5239CA BZ5239CAN3 BZ5239CC
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| OCR Text |
...
Electrical Characteristic (VF=0.9V Max @IF=10mA.)
Test Current IZT(mA) 20 Zener Voltage VZ(V) 9.1 5% ZZK IZ=0.25mA (, max) 600 ZZT IZ=IZT...29A ) * BZ5239CCN3: Common Cathode. (Marking Code : 29C ) *: Typical
DIM A B C D G H
Inches Mi... |
| Description |
Two ZD5239 diodes are encapsulated in a SOT-23 small plastic SMD package. Two different pinnings are available.
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| File Size |
167.51K /
3 Page |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
C67078-A4404-A2
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| OCR Text |
...7 2.8 -
V
VGE = VCE, IC = 0.35 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 C VGE = 15 V, IC = 15 A, Tj = 125 C VGE = 15 V, IC = 30 A, Tj = 25 C VGE = 15 V, IC = 30 A, Tj = 125 C
Zero gate... |
| Description |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
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| File Size |
148.84K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDD26AN06A0
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| OCR Text |
...perature 36 25 7 Figure 4 35 75 0.5 -55 to 175 A A A A mJ W W/oC
oC
Ratings 60 20
Units V V
Thermal Characteristics
RJC RJA RJA T...29A, VDD = 54V, VGS = 10V.
(c)2004 Fairchild Semiconductor Corporation
FDD26AN06A0 Rev. A
F... |
| Description |
60V N-Channel PowerTrench MOSFET 60V, 36A, 26mO
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| File Size |
545.16K /
11 Page |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF45N03L
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| OCR Text |
...* * * * * * 29A, 30V, RDS(on) = 0.018 @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 105 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating
D
!
"
G! GD S
!... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 29A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 30V的五（巴西）直|9A条（丁）|20F
30V LOGIC N-Channel MOSFET
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| File Size |
674.97K /
8 Page |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3
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| OCR Text |
...eatures
* 46A, 200V, rDS(ON) = 0.050 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curv...29A, VGS = 12V
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate ... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
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| File Size |
48.34K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRFIZ48V IRFIZ48 IRFIZ48VPBF
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| OCR Text |
...r M3 srew
Max.
39 27 290 43 0.29 20 72 15 5.3 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V A mJ V/ns C
...29A 51A BOTTOM 72A TOP
RG
20V
D .U .T
IA S tp
+ - VD D
A
200
0 .0 1
Fig 12a. ... |
| Description |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)
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| File Size |
92.06K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRFPS29N60L
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| OCR Text |
... Typ. Max. Units
600 --- --- 3.0 --- --- --- --- --- --- 0.53 175 --- --- --- --- --- 0.86 --- --- 210 5.0 50 2.0 100 -100 --- V m V A mA ...29A
Conditions
VDS = 50V, ID = 17A VDS = 480V VGS = 10V, See Fig. 7 & 15 VDD = 300V ID = 29A RG ... |
| Description |
SMPS MOSFET
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| File Size |
166.79K /
9 Page |
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it Online |
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