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  0.1 0.2a Datasheet PDF File

For 0.1 0.2a Found Datasheets File :: 45641    Search Time::5ms    
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    2SC4059

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4059
OCR Text ...50 600 450 600 7 15 30 6 12 130 0.8 Ratings Min 450 Max 0.1 Max 0.1 Max 0.1 Min 10 Min 5 Max 1.0 Max 1.5 Max 0.96 STD 20 Max 0.5 Max 2.0 Max 0.2 Unit V V V A A W Nm Electrical Characteristics (Tc=25) Item Symbol Collector to Emitte...
Description Switching Power Transistor(15A NPN)

File Size 523.75K  /  12 Page

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    2SC4559

PANASONIC[Panasonic Semiconductor]
Part No. 2SC4559
OCR Text 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q High collector to emitter VCEO High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 500 500 400 7 15 ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.09K  /  3 Page

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    2SD2045

SANKEN[Sanken electric]
Part No. 2SD2045
OCR Text ...ternal Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 A mA 23.00.3 V 9.50.2 a b MHz pF 1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Char...
Description Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid/ Motor and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Motor and General Purpose)

File Size 25.04K  /  1 Page

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    2SD2137A 2SB1417 2SB1417A 2SD2137

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text ...s -60 -80 -60 -80 -6 -5 -3 15 2.0 150 -55 to +150 Unit V 2.50.2 s Absolute Maximum Ratings 13.00.2 4.20.2 High forward curren...1 10.00.2 1.0 90 1.20.1 C1.0 2.250.2 18.00.5 Solder Dip 0.350.1 0.650.1 1.050.1 0....
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR

File Size 53.34K  /  3 Page

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    2SD2137 2SD2137A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137 2SD2137A
OCR Text ...150 Unit V 18.00.5 Solder Dip 0.350.1 5.00.1 10.00.2 1.0 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2137 2SD2137A 2SD2137 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.00.2 4.20.2 90 2.50.2...
Description Silicon NPN triple diffusion planar type(For power amplification)

File Size 52.93K  /  3 Page

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    2SD2138A 2SB1418 2SB1418A 2SD2138

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text ...2 Unit: mm 5.00.1 10.00.2 1.0 s Features q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25C) Ratings -60 -80 -60 -80 -5 -4 -2 15 2.0 150 -55 to +150 Unit V ...
Description Silicon PNP epitaxial planar type Darlington(For power amplification)

File Size 59.81K  /  2 Page

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    2SD2138 2SD2138A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138 2SD2138A
OCR Text ...2 s Features 10.00.2 1.0 90 1.20.1 18.00.5 Solder Dip s Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 5 4 2 15 2 150 -55 to +150 Unit V 2SD2138 2SD2138A 2SD2...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.65K  /  2 Page

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    2SD2139

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2139
OCR Text ...00.2 4.20.2 5.00.1 10.00.2 1.0 q 2.50.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25C) Ratings 80 60 6 6 3 1 15 2 150 -55 to +1...
Description Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)

File Size 49.15K  /  3 Page

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    2SJ459

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ459
OCR Text ...ons unit : mm 2093A [2SJ459] 0.9 High-speed diode incorporated. 10.2 4.5 1.3 11.5 1.6 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 1 : Gate 2 : Drain 3 : Source SANYO : SMP 2.55 2.55 unit : mm...
Description    Ultrahigh-Speed Switching Applications
Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 32.07K  /  4 Page

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    2SJ484

HITACHI[Hitachi Semiconductor]
Part No. 2SJ484
OCR Text ... * Low on-resistance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute M...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 42.55K  /  9 Page

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For 0.1 0.2a Found Datasheets File :: 45641    Search Time::5ms    
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