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  0.0158 Datasheet PDF File

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    MOSPEC[Mospec Semiconductor]
Part No. URF1220 URF1205 URF1210 URF1215
OCR Text ...150 20 200 V Unit 35 70 6.0 12 12 105 140 V A A DIM A B C D E F G H I J K L M N P O Q Non-Repetitive Peak Surge Current (Surge applied at rate load conditions half-ware, single phase, 60Hz) Operating and Storage Junc...
Description Switchmode Full Plastic Dual Ultrafast Power Rectifiers

File Size 62.79K  /  2 Page

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    MOSPEC[Mospec Semiconductor]
Part No. URF1620 URF1605 URF1610 URF1615
OCR Text ...150 20 200 V Unit 35 70 8.0 16 16 105 140 V A A DIM A B C D E F G H I J K L M N P O Q Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junct...
Description Switchmode Full Plastic Dual Ultrafast Power Rectifiers

File Size 78.33K  /  2 Page

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    MOSPEC[Mospec Semiconductor]
Part No. URF1660 URF1630 URF1640 URF1650
OCR Text ...0 60 600 V Unit 210 280 8.0 16 16 350 420 V A A DIM A B C D E F G H I J K L M N P O Q Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction...
Description Switchmode Full Plastic Dual Ultrafast Power Rectifiers

File Size 82.99K  /  2 Page

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    MOSPEC[Mospec Semiconductor]
Part No. URF2060 URF0630 URF0640 URF0650 URF0660 URF2030 URF2040 URF2050
OCR Text ... ) Reverse Recovery Time ( IF = 0.5 A, IR =1.0 , Irr =0.25 A ) Typical Junction Capacitance (Reverse Voltage of 4 volts & f=1 MHz) Symbol 30 VF 1.30 1.15 URF20 40 50 1.50 1.36 60 V Unit MILLIMETERS MIN MAX 15.05 15.15 13.35 13.45 10.00 1...
Description Switchmode Full Plastic Dual Ultrafast Power Rectifiers

File Size 84.28K  /  2 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. URSF05G49-5P URSF05G49-1P URSF05G49-3P
OCR Text ...ltage (Non-Repetitive<5ms, Tj = 0~125C) Average On-State Current (Half Sine Waveform) R.M.S On-State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Current (Note 1) Peak Gate...
Description THYRISTOR SILICON PLANAR TYPE LOW POWER SWITCHING AND CONTROL APPLICATIONS
TOSHIBA THYRISTOR SILICON PLANAR TYPE

File Size 241.22K  /  6 Page

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    UTC[Unisonic Technologies]
Part No. US104S
OCR Text ... 600 800 4 2.5 33 30 4.5 50 1.2 0.2 -40 ~ +150 -40 ~ +125 UNIT V A A A AS A/s A W C C UTC US104S(SENSITIVE) ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified) PARAMETER Gate trigger Current Gate trigger Voltage Gate no...
Description SCRs

File Size 189.70K  /  4 Page

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    Unisonic Technologies Co., Ltd.
UTC[Unisonic Technologies]
Part No. US112S US112N
OCR Text ...Rd IDRM IRRM MIN MAX. 200 0.8 UNIT A V V VD = VDRM, RL = 3.3 k, RGK = 1k Tj = 125C IRG = 10 A IT = 50 mA, RGK = 1 k IG = 1 mA ,RGK = 1 k 0.1 8 5 6 5 1.6 0.85 30 5 2 V mA mA V/s V V m A mA VD = 67 % VDRM ,RGK = 220 ...
Description Suitable to fit all modes of control Found in applications such as Overvoltage crowbar protection 以适合,如铁撬过电压保护应用发现所有的控制模式

File Size 187.19K  /  4 Page

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    友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. US2026AL-S08-T US2026A US2026AL-S08-R US2026A-S08-R US2026A-S08-T
OCR Text ...ATINGS UNIT Supply Voltage VIN -0.3 ~ +6 V Output Voltage VOUT -0.3 ~ +6 V Voltage at All Other Pins VOTHER -0.3 ~ +6 V Total Power Dissipation PD 300 mW Junction Temperature TJ +150 Operating Temperature TOPR -40 ~ +85 Storage Temperature ...
Description DUAL-CHANNEL USB POWER SWITCH AND OVER-CURRENT PROTECTION

File Size 224.46K  /  11 Page

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    WEITRON[Weitron Technology]
Part No. US2M US2A US2B US2D US2G US2J US2K
OCR Text 0 AMPERE Features: * For Surface Mount Application * Glass Passivated Chip * Low Reverse Leakage Current * Low Forward Voltage Drop And High Current Capability * Ultra Fast Switching For High Efficiency * Plastic Meterial Has UL Flammab...
Description    Surface Mount Ultra Fast Rectifiers

File Size 107.80K  /  3 Page

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    US3881LUA US3881 US3881ESO US3881EUA US3881LSO

Melexis
ETC[ETC]
List of Unclassifed Manufacturers
Part No. US3881LUA US3881 US3881ESO US3881EUA US3881LSO
OCR Text ..., CL = 20pf Min 2.2 1.5 Typ 2.5 0.4 0.01 0.04 0.18 Max 18 4.0 0.5 5.0 Units V mA V iA is is US3881 Magnetic Specifications DC Operating Parameters: TA = -40 to 150oC, VDD =12 VDC (unless otherwise specified). 1mT=10 Gauss. Parameter Ope...
Description From old datasheet system
CMOS Low Voltage Hall Effect Latch

File Size 115.36K  /  6 Page

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