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LINEAR[Linear Integrated Systems]
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| Part No. |
SST824 SST823
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| OCR Text |
...3 SST824 +25V +15V +20V +22.5V +30V VSB VGB VGS VGD Source to Body Gate to Body Gate to Source Gate to Drain SST823 SST824 +22.5V +25V +30V 22.5V 22.5V IDS = 1A IDS = 200mA
2
HIGH SPEED N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
tON... |
| Description |
HIGH SPEED N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
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| File Size |
221.74K /
2 Page |
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STANSON[Stanson Technology]
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| Part No. |
ST2303
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| OCR Text |
...RATION SOT-23-3L 3
FEATURE
-30v/-2.6A, RDS(ON) = 130m-ohm
D G
1
1.Gate 2.Source
S
2
3.Drain
@VGS = -10V -30v/-2.0A, RDS(ON) = 180m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-res... |
| Description |
P Channel Enchancement Mode MOSFET
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| File Size |
76.53K /
6 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE28
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| OCR Text |
.... . . . . . . . . . . . . . . . 30V Collector Current-Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . ... |
| Description |
Germanium PNP Transistor High Current, High Gain Amplifier
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| File Size |
72.53K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE27
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| OCR Text |
.... . . . . . . . . . . . . . . . 30V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . ... |
| Description |
Germanium PNP Transistor High Current, High Gain Amp
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| File Size |
21.87K /
2 Page |
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it Online |
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STANSON[Stanson Technology]
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| Part No. |
ST2304
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| OCR Text |
...GURATION SOT-23-3L 3
FEATURE 30V/2.5A, RDS(ON) = 70m-ohm @VGS = 10V 30V/2.0A, RDS(ON) = 105m-ohm @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L p... |
| Description |
N Channel Enchancement Mode MOSFET
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| File Size |
76.26K /
6 Page |
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it Online |
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STANSON[Stanson Technology]
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| Part No. |
ST2306
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| OCR Text |
...SOT-23-3L / SOT-23 3
FEATURE 30V/3.5A, RDS(ON) = 70m-ohm @VGS = 10V 30V/2.8A, RDS(ON) = 95m-ohm @VGS = 5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L /SOT... |
| Description |
N Channel Enhancement Mode MOSFET
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| File Size |
146.51K /
8 Page |
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it Online |
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STANSON[Stanson Technology]
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| Part No. |
ST3403
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| OCR Text |
...URATION SOT-23-3L 3
FEATURE -30v/-2.8A, RDS(ON) = 105m-ohm @VGS = -10V -30v/-2.5A, RDS(ON) = 115m-ohm @VGS = -4.5V -30v/-1.5A, RDS(ON) = 155m-ohm @VGS = -2.5V RDS(ON) =255m-ohm @VGS = -1.8V Super high density cell design for extremely lo... |
| Description |
P Channel Enchancement Mode MOSFET
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| File Size |
144.82K /
7 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2521
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| OCR Text |
...0mA VCE = 10V, IC = 250mA VCE = 30V, IC = 100mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz Min - - 60 20 - - - Typ - - - - 400 4.2 3.4 Max 0.1 0.1 320 - - - - MHz pF pF Unit A A
Electrical Characteristics (Cont'd): (TA = +25C unless otherwi... |
| Description |
Silicon NPN Transistor Video Output for HDTV
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| File Size |
20.86K /
2 Page |
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it Online |
Download Datasheet |
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