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For vec Found Datasheets File :: 1757    Search Time::1.235ms    
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    CM20MD1-12H

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM20MD1-12H
OCR Text ...elay time tf Turn-off fall time vec (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Min. -- 4.5 -- -- -- -- -- -- --...
Description MEDIUM POWER SWITCHING USE FLAT-BASE TYPE/ INSULATED TYPE
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE

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    CM600HX-24A

Mitsubishi Electric Semiconductor
Part No. CM600HX-24A
OCR Text .... 6) Tj = 25C Tj = 125C Chip vec(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG IE = 600A, VGE = 0V Module lead resistance Main terminals-chip Thermal resistance per IGBT (Note. 1) per free wheeling diod...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    CM75E3U-24H09

Mitsubishi Electric Semiconductor
Part No. CM75E3U-24H09
OCR Text ... Cres QG td (on) tr td (off) tf vec (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. 5. 6. (Tj = 25C, unless otherwise specified) Item Collector cutoff current Gate-emitter thresho...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 71.74K  /  4 Page

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    CM75TU-24F09

Mitsubishi Electric Semiconductor
Part No. CM75TU-24F09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capa...
Description HIGH POWER SWITCHING USE

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    CM75TU-34KA09

Mitsubishi Electric Semiconductor
Part No. CM75TU-34KA09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacit...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 78.42K  /  4 Page

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    CM150DU-24F CM150DU-24F09

Mitsubishi Electric Semiconductor
Part No. CM150DU-24F CM150DU-24F09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capa...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 107.88K  /  4 Page

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    CM150DU-24H09

Mitsubishi Electric Semiconductor
Part No. CM150DU-24H09
OCR Text ...elay time tf Turn-off fall time vec(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Note 1. 2. ...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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    CM150DU-24NFH CM150DU-24NFH09 CM150DU-24NFH11

Mitsubishi Electric Semiconductor
Part No. CM150DU-24NFH CM150DU-24NFH09 CM150DU-24NFH11
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Rth(j-c')R RG Parameter Collector cutoff current (Tj = 25C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V VGE ...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    CM600DU-24NFH09

Mitsubishi Electric Semiconductor
Part No. CM600DU-24NFH09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Rth(j-c')R RG Parameter Collector cutoff current (Tj = 25C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE ...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 93.41K  /  4 Page

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For vec Found Datasheets File :: 1757    Search Time::1.235ms    
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