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				IRF[International Rectifier]
Part No.	IRF1405L IRF1405S
OCR Text	...Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 5.3m S Benefits q q q q q q ID = 131A Description Stripe Pla...240 300 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capac...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A? Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?) 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	153.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1405
OCR Text	...Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 5.3m S Benefits q q q q q q ID = 169A Description Specifical...240 300 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capac...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
File Size	114.28K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...Repetitive Avalanche Allowed up to Tj Max Automotive Qualified (Q101) HEXFET(R) Power MOSFET VDSS = 40V RDS(on) = 0.004 G ID = 170A ...240 300 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capaci...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 1.6m ID = 160A Description Specifically designed for Automotive...240 Gfs, Forward Transconductance (S) TJ = 25C 200 160 120 80 40 0 0 20 40 60 80 100 120 140 ID,...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0m G S Description Specifically designed for Automotive applicatio...240 62 99 --- --- --- --- --- --- --- --- --- --- --- --- pF nH ns nC nA V S A V m Conditions VG...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2805L IRF2805S
OCR Text	...Repetitive Avalanche Allowed up to Tjmax Features VDSS = 55V G S RDS(on) = 4.7m ID = 135AV Description Specifically desi...240 Q G Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs...
Description	55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	221.43K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205 IRF3205PBF
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...240) -B4.69 (.185 ) 4.20 (.165 ) 1.32 (.052) 1.22 (.048) 4 15.24 (.60 0) 14.84 (.58 4) 1.15 (....
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
File Size	91.40K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	...Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated VDSS 30V RDS(on) max 2.8m ID 210A TO-220AB...240 280 320 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Ca...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	... Avalanche Voltage and Current TO-220AB IRF3708 D2Pak IRF3708S TO-262 IRF3708L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25C I...240 15V 120 V (B R )D S S tp VD S L DRIVER RG 20 V D.U .T IA S + - VD D 0 25 5...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...DS(on) max 6.0m ID 110A TO-220AB IRF3711 D2Pak IRF3711S TO-262 IRF3711L Parameter Drain-Source Voltage Gate-to-Source Volt...240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.0...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

For to-240 Found Datasheets File :: 54087 Search Time::2.266ms
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