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Infineon Technologies A...
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| Part No. |
FP25R12KT4 FP25R12KT4-13
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| OCR Text |
...in. typ. max. kollektor-emitter-s?ttigungsspannung collector-emittersaturationvoltage i c = 25 a, v ge = 15 v i c = 25 a, v ge = 15 v ...igbt/perigbt r thjc 0,95 k/w w?rmewiderstand,geh?usebiskhlk?rper thermalresistance,case... |
| Description |
EconoPIM2 Modul mit Trench
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| File Size |
752.79K /
12 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
FP25R12KT4-B11
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| OCR Text |
...in. typ. max. kollektor-emitter-s?ttigungsspannung collector-emittersaturationvoltage i c = 25 a, v ge = 15 v i c = 25 a, v ge = 15 v ...igbt/perigbt r thjc 0,95 k/w w?rmewiderstand,geh?usebiskhlk?rper thermalresistance,case... |
| Description |
EconoPIM2 Modul mit Trench
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| File Size |
756.79K /
12 Page |
View
it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
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| OCR Text |
... ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,1...IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode i... |
| Description |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
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| File Size |
175.79K /
8 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
FP25R12KT3
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| OCR Text |
...in. typ. max. kollektor-emitter-s?ttigungsspannung collector-emittersaturationvoltage i c = 25 a, v ge = 15 v i c = 25 a, v ge = 15 v ...igbt/perigbt r thjc 0,80 k/w temperaturimschaltbetrieb temperatureunderswitchingconditio... |
| Description |
IGBT-Module
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| File Size |
522.52K /
11 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
FP25R12KE3
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| OCR Text |
...in. typ. max. kollektor-emitter-s?ttigungsspannung collector-emittersaturationvoltage i c = 25 a, v ge = 15 v i c = 25 a, v ge = 15 v ...igbt/perigbt r thjc 0,80 k/w w?rmewiderstand,geh?usebiskhlk?rper thermalresistance,case... |
| Description |
EconoPIM2 mit Trench
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| File Size |
510.34K /
11 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTP10N40F1D HGTP10N50F1D
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| OCR Text |
... ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,...IGBT) Thermal Resistance of Diode Diode Forward Voltage Diode Reverse Recovery Time VGEP QG(ON) tD(O... |
| Description |
10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
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| File Size |
33.70K /
5 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
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| OCR Text |
... ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,1...IGBT and Diode at TJ = 125oC, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10, L = 500H, Test Circuit (Fig... |
| Description |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
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| File Size |
170.23K /
8 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
6MS24017P43W41646
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| OCR Text |
...d c l i n k i n v e r t e r s e c t i o n s i g n a l c o n d i t i o n i n g & m o n i t o r d r i v e r 3 p h a s e s e l e c t r ...igbt; t vj = 25c v ces 1700 v repetitive peak reverse voltage diode; t vj = 25c v rrm 1700 v dc li... |
| Description |
IGBT Stack for typical voltages up to 690 VRMS Rated output current 1175RMS
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| File Size |
1,036.44K /
9 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor
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| Part No. |
HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
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| OCR Text |
... ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,1...IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Fig... |
| Description |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
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| File Size |
202.82K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTP12N60B3 HGT1S12N60B3S FN4410
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| OCR Text |
... ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,1...IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Figu... |
| Description |
From old datasheet system
27A, 600V, UFS Series N-Channel IGBTs
27A/ 600V/ UFS Series N-Channel IGBTs
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| File Size |
111.87K /
7 Page |
View
it Online |
Download Datasheet |
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