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  rg-8 u Datasheet PDF File

For rg-8 u Found Datasheets File :: 14540    Search Time::2.468ms    
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    CM100RX-12A

Mitsubishi Electric Semiconductor
Part No. CM100RX-12A
OCR Text ...CC = 300V, IC = 100A VGE = 15V, RG = 6.2 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 100A) IE = 100A, VGE = 0V (Note...8 2.0 1.95 1.9 -- -- 0 -- Max. 1 7 0.5 2.1 -- -- 13.3 1.4 0.45 -- 100 100 300 600 200 -- 2.8 -- -...
Description IGBT MODuLES HIGH POWER SWITCHING uSE

File Size 223.61K  /  8 Page

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    STFW4N150 STFW4N15009 STP4N150 STW4N150

ST Microelectronics
STMicroelectronics
Part No. STFW4N150 STFW4N15009 STP4N150 STW4N150
OCR Text ... - VDD = 750 V, ID = 2 A, RG = 4.7 , VGS = 10 V Figure 19 VDD = 600 V, ID = 4 A, VGS = 10 V Figure 20 - - 1. Pulsed: pulse du...8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure...
Description N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-3PF
N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247
N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF
N-channel 1500 V, 5 Ω, 4 A, PowerMESH?/a> Power MOSFET in TO-220, TO-247, TO-3PF

File Size 731.92K  /  15 Page

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    CM200RX-12A

Mitsubishi Electric Semiconductor
Part No. CM200RX-12A
OCR Text ...CC = 300V, IC = 200A VGE = 15V, RG = 5.1 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 200A) IE = 200A, VGE = 0V (Note...8 -- 120 150 350 600 200 -- 2.8 -- -- 0.17 0.33 -- 31 unit mA V A V nF nC ns C V K/W ...
Description IGBT MODuLES HIGH POWER SWITCHING uSE

File Size 223.57K  /  8 Page

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    FB-9N60A

International Rectifier
Part No. FB-9N60A
OCR Text ... 25 --- ID = 9.2A ns --- 30 --- RG = 9.1 --- 22 --- RD = 35.5,See Fig. 10 D Between lead, 4.5 --- --- 6mm (0.25in.) nH G from package --- 7...8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP 100 I D , Drain-to-Source Current (A) 10 I D , ...
Description Search --To IRFB9N60A

File Size 138.70K  /  8 Page

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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text ...tarting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V The information in this document is subject to change without notice. Before us...8.2 12.3 1.0 1.9 12 0.75 MIN. TYP. MAX. 100 100 3.5 uNIT A nA V S pF pF pF ns ns ns ns nC nC nC...
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET

File Size 76.83K  /  8 Page

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    K2485

NEC
Part No. K2485
OCR Text ...50 C ** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 Body Diode Gate Source Document No. D10279EJ1V0DS00 (1st edition) Date Publ...8 3.5 uNIT V S TEST CONDITIONS VGS = 10 V, ID = 3.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A ...
Description Search --To 2SK2485

File Size 145.74K  /  8 Page

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    2N7002K09

Pan Jit International Inc.
Part No. 2N7002K09
OCR Text ...0V , RL=150 ID=200mA , VGEN=10V RG=10 - - 0 .8 20 nC ns 40 35 10 5 pF V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ - V SD IS IS M IS=200mA , VGS=0V - - 0.82 - 1.3 300 2000 V mA mA Switching Test Circuit V...
Description 60V N-Channel Enhancement Mode MOSFET - ESD Protected

File Size 159.77K  /  5 Page

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    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text ..., VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Ti...8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] ID , Drain Current [A] 1...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

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    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ..., VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Ti...8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] ID , Drain Current [A] 1...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

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    FQA34N25

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA34N25
OCR Text ..., 5) VDD = 125 V, ID = 34 A, RG = 25 (Note 4, 5) -------- 45 335 110 150 60 14 36 100 680 230 310 80 --- ns ns ns ns nC nC ...8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 2 ID, Drain Current [A] 10 1 ID, D...
Description 250V N-Channel MOSFET 34 A, 250 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 688.01K  /  8 Page

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