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  rg-55 u Datasheet PDF File

For rg-55 u Found Datasheets File :: 11356    Search Time::1.719ms    
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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text ...tarting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types availabl...
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET

File Size 76.83K  /  8 Page

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    AD620 AD620A AD620ACHIPS AD620AN AD620AR AD620AR-REEL AD620AR-REEL7 AD620B AD620BN AD620BR AD620BR-REEL AD620BR-REEL7 AD

ANALOG DEVICES INC
AD[Analog Devices]
Analog Devices, Inc.
Part No. AD620 AD620A AD620ACHIPS AD620AN AD620AR AD620AR-REEL AD620AR-REEL7 AD620B AD620BN AD620BR AD620BR-REEL AD620BR-REEL7 AD883B AD620SQ883B
OCR Text ...rdip (Q) and SOIC (R) Packages RG -IN +IN -VS 1 2 3 4 8 RG 7 +VS 6 OuTPuT AD620 TOP VIEW 5 REF 1000. Furthermore, the AD620 fe...55 0.28 100 10 20 +50 13 100 9 72 13 100 9 72 13 100 nV/Hz nV/Hz V p-p V p-p V p-p fA/Hz pA p-p k A ...
Description Low Drift, Low Power Instrumentation Amp With Set Gains of 1 to 1000
Low Cost, Low Power Instrumentation Amplifier
Precision Instrumentation Amplifier INSTRuMENTATION AMPLIFIER, 150 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8

File Size 571.25K  /  16 Page

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    APT12045L2VR

ADPOW[Advanced Power Technology]
Part No. APT12045L2VR
OCR Text ... DV NF A I 280 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX uNIT Amps Volts ns C 26 104 1.3 (VGS = 0V, IS = -ID[Cont.]) 1250 31 Reverse Recovery Charge (IS = -ID[Cont.], dl...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.91K  /  2 Page

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    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text ..., VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Ti...55 60 65 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD ...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

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    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ..., VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switching Characteristics Turn-On Delay Ti...55 60 65 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD ...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

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    FQA34N25

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA34N25
OCR Text ..., 5) VDD = 125 V, ID = 34 A, RG = 25 (Note 4, 5) -------- 45 335 110 150 60 14 36 100 680 230 310 80 --- ns ns ns ns nC nC ...55 Notes : 1. VDS = 50V 2. 250 s Pulse Test 10 0 Notes : 1. 250 s Pulse Test 2. TC = 25 ...
Description 250V N-Channel MOSFET 34 A, 250 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 688.01K  /  8 Page

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    FQAF34N25

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF34N25
OCR Text ..., 5) VDD = 125 V, ID = 34 A, RG = 25 (Note 4, 5) -------- 45 335 110 150 60 14 36 100 680 230 310 80 --- ns ns ns ns nC nC ...55 Notes : 1. VDS = 50V 2. 250 s Pulse Test 10 0 Notes : 1. 250 s Pulse Test 2. TC = 25 ...
Description 250V N-Channel MOSFET

File Size 684.75K  /  8 Page

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    FQT4N25

Fairchild Semiconductor, Corp.
Part No. FQT4N25
OCR Text ... 5) VDD = 125 V, ID = 3.6 A, RG = 25 (Note 4, 5) -------- 6.8 45 6.4 22 4.3 1.3 2.1 25 100 25 55 5.6 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous ...
Description 250V N-Channel MOSFET 0.83 A, 250 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 652.28K  /  8 Page

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    HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...55 295 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 320 550 700 uNITS V V A mA V V V nA ...
Description 45 A, 600 V, uFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, uFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT

File Size 141.01K  /  8 Page

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    HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
OCR Text ...E = 20A, VCE = 390V, VGE = 15V, RG = 3, L = 500H, Test Circuit Figure 24 TYP 1.8 1.6 5.5 8.6 142 182 15 12 73 32 105 280 150 15 13 105 55 115 510 330 MAX 250 3.0 2.7 2.0 7.0 250 162 210 350 200 21 18 135 73 600 500 uNITS V A mA V V V nA A V...
Description CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 162.96K  /  9 Page

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