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IRF[International Rectifier]
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Part No. |
100BGQ100J 100BGQ100
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OCR Text |
...40HFL40S02
+
DUT
IRFP460 Rg = 25 ohm
Vd = 25 Volt
CURRENT MONITOR
Fig. 8 - Unclamped Inductive Test Circuit
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. ... |
Description |
100V 100A Schottky Discrete Diode in a PowIRtab (Short) package 100V 100A Schottky Discrete Diode in a PowIRtab package SCHOTTKY RECTIFIER
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File Size |
123.07K /
6 Page |
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it Online |
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hitachi
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Part No. |
BB501C
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OCR Text |
...A VDS = 5V, VG1 = 5V VG2S = 4V, RG = 47k VDS = 5V, VG1 = 5V VG2S =4V RG = 47k, f = 1kHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 47k f = 1MHz VDS =...141.2 137.6 134.2 130.6 127.4 124.3 120.8 117.3 114.3 111.0 108.0 S12 MAG 0.00057 0.00144 0.00211 0.... |
Description |
From old datasheet system
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File Size |
82.40K /
13 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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Part No. |
MGP20N60U_D ON1866 MGP20N60U ON1865
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OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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Description |
IGBT IN TO-220 20 A @ 90 31 A @ 25 600 VOLTS From old datasheet system Insulated Gate Bipolar Transistor
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File Size |
116.77K /
5 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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Part No. |
MGW20N120_D ON1922 MGW20N120
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OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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Description |
Insulated Gate Bipolar Transistor From old datasheet system IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS
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File Size |
135.63K /
5 Page |
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it Online |
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