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  rg-141 Datasheet PDF File

For rg-141 Found Datasheets File :: 869    Search Time::0.969ms    
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    IRF[International Rectifier]
Part No. 100BGQ100J 100BGQ100
OCR Text ...40HFL40S02 + DUT IRFP460 Rg = 25 ohm Vd = 25 Volt CURRENT MONITOR Fig. 8 - Unclamped Inductive Test Circuit (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. ...
Description 100V 100A Schottky Discrete Diode in a PowIRtab (Short) package
100V 100A Schottky Discrete Diode in a PowIRtab package
SCHOTTKY RECTIFIER

File Size 123.07K  /  6 Page

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    hitachi
Part No. BB501C
OCR Text ...A VDS = 5V, VG1 = 5V VG2S = 4V, RG = 47k VDS = 5V, VG1 = 5V VG2S =4V RG = 47k, f = 1kHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 47k f = 1MHz VDS =...141.2 137.6 134.2 130.6 127.4 124.3 120.8 117.3 114.3 111.0 108.0 S12 MAG 0.00057 0.00144 0.00211 0....
Description From old datasheet system

File Size 82.40K  /  13 Page

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    MGFK41A4045

Mitsubishi Electric Semiconductor
Part No. MGFK41A4045
OCR Text ... ? vds=10v ? id=3.0a ? rg=50ohm absolute maximum ratings (ta=25 ? c) symbol parameter ratings unit vgdo gate to drain...141.7 13.80 0.434 -172.4 1.976 -46.0 0.102 -53.5 0.434 -153.0 13.90 0.369 175.1 2.059 -58.0 0.109 -6...
Description 14.0-14.5 GHz BAND / 12W

File Size 103.67K  /  4 Page

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    MGP14N60E

Motorola, Inc
Part No. MGP14N60E
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC...
Description Insulated Gate Bipolar Transistor

File Size 95.07K  /  6 Page

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    STD150NH02L

STMicroelectronics
Part No. STD150NH02L
OCR Text ... Symbol gfs (4) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate...141 Max. Unit S pF pF pF VDS = 15V f = 1 MHz VGS = 0 f = 1 MHz Gate DC Bias = 0 Test Signal L...
Description N-CHANNEL 24V - 0.003 ohm - 150A ClipPAK⑩/IPAK STripFET⑩ III POWER MOSFET

File Size 138.80K  /  9 Page

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    MGP11N60E

Motorola, Inc
Part No. MGP11N60E
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC...
Description Insulated Gate Bipolar Transistor

File Size 93.72K  /  6 Page

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    FDH038AN08A1

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FDH038AN08A1
OCR Text ...= 10V * Internal Gate Resistor, Rg = 20 (Typ.) * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse)...141 232 126 345 530 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to D...
Description N-Channel PowerTrench; MOSFET, 75V, 80A, 3.8 MOhm TO-247 Package
N-Channel PowerTrench MOSFET

File Size 154.48K  /  10 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP20N60U_D ON1866 MGP20N60U ON1865
OCR Text ... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 Motorola IGBT Device Data ...
Description IGBT IN TO-220 20 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor

File Size 116.77K  /  5 Page

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    ONSEMI[ON Semiconductor]
Part No. MGW20N120_D ON1922 MGW20N120
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 Motorola IGBT Device Data ...
Description Insulated Gate Bipolar Transistor
From old datasheet system
IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS

File Size 135.63K  /  5 Page

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For rg-141 Found Datasheets File :: 869    Search Time::0.969ms    
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