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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SHF-0186
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| OCR Text |
...ge IGD= 1.2mA, VGS= -5V Thermal resi stance (juncti on-to-lead) Operati ng Voltage (drai n-to-source) Operati ng C urrent (drai n-to-source, qui escent) Recommended Operati ng Juncti on T mperature e
f = 900 MHz f = 1960 MHz f = 12000 MH... |
| Description |
0.05-12 GHz, 0.5 Watt GaAs HFET
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| File Size |
725.78K /
4 Page |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SBW-5089
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| OCR Text |
... ce Operati ng C urrent Thermal resi stance (juncti on to lead)
Test Conditions:
VS = 8 V RBIAS = 39 Ohms
ID = 80 mA Typ. TL = 25C
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
The information provided he... |
| Description |
DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
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| File Size |
460.39K /
7 Page |
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it Online |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SPF-2086T
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| OCR Text |
...GD = 0.3mA, VGS = -3.0V Thermal resi stance, juncti on-to-lead
f f f f
= = = =
0.9 GHz 1.9 GHz 4.0 GHz [1] 12.0 GHz [1] [1]
dB dB dB dB dB dB dB dB dB dB m dB m dB m dB m mA mS
16.8 8.4 16.0 30 -1.5 -
25.2 21.8 18.7 9.3 17... |
| Description |
Low Noise pHEMT GaAs FET 0.1 - 12 GHz Operation
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| File Size |
578.25K /
5 Page |
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it Online |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SPF-3043
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| OCR Text |
...rai n Breakdown Voltage Thermal resi stance Operati ng Voltage Operati ng C urrent
[1]
IGS= 0.03 mA, drai n open IGD= 0.03 mA, source open juncti on-to-lead drai n-source drai n-source
[1] 100% tested - DC parameters tested on-wafer,... |
| Description |
Low Noise pHEMT GaAs FET
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| File Size |
149.03K /
4 Page |
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it Online |
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http://
SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SXA-389BZ SXA-389B
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| OCR Text |
... ng D i ssi pated Power Thermal resi stance (juncti on - lead)
V cc = 5 V
mA mW C /W
90
115 575 70
135
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibili... |
| Description |
400-2500 MHz ? W Medium Power GaAs HBT Amplifier with Active Bias
400-2500 MHz ? W Medium Power GaAs HBT Amplifier with Active Bias
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| File Size |
142.32K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Vishay Intertechnology, Inc.
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| Part No. |
USB10H
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| OCR Text |
...NORMALI ZED
DRAIN-SOURCE O N-resi STANCE
V GS= -4.5V
10 8 6
-3.5V -3.0V
1.8 1.6 1.4 1.2 1 0.8
VGS = -2 .5 V
-3.0V -3.5V -4.0V -4.5V
-2.5V
4 2 0 0 1 2 3 4 5 -V DS , DRAIN-SOURCE VOLTAG E (V)
-2.0V
0
2
4
... |
| Description |
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Dual P-Channel 2.5V Specified PowerTrench MOSFET(双P沟道 PowerTrench MOS场效应管（漏电流-1.9A, 漏源电压-20V，导通电.17Ω 1900 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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| File Size |
234.30K /
8 Page |
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it Online |
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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
VB024
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| OCR Text |
...attery Test Circuit
(*) This resi stor represents vehicle wiring harness resistance
6/8
VB024
ISOWATT7 MECHANICAL DATA
DIM. A B C D D1 E F F1 F2 G G1 G2 H L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 M N mm TYP. inch TYP.
MIN. 5.35 3... |
| Description |
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
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| File Size |
109.30K /
8 Page |
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it Online |
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WEITRON[Weitron Technology]
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| Part No. |
WT6920AM STM6920A
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| OCR Text |
...malized Transi en t
The rmal resi st ance
1
0.5 0.2 0.1
PDM t1
on
0.1
0.05 0.02 0.01
t2
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.01 0.00001
1. RJA (t)=r (t) * RJA 2. RJA=See Datasheet 3. TJM-TA = PDM* RJA (t) 4... |
| Description |
Surface Mount N-Channel Enhancement Mode MOSFET
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| File Size |
209.08K /
6 Page |
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it Online |
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