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Bourns, Inc. Bourns Electronic Solutions
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Part No. |
SRP7030-1R0FM SRP7030-100FM SRP7030-R15FM SRP7030-1R5FM SRP7030-R10FM SRP7030-R20FM SRP7030-1R1FM SRP7030-2R2FM SRP7030F SRP7030-R33FM SRP7030-5R6FM SRP7030-4R7FM SRP7030-6R8FM SRP7030-R22FM SRP7030-3R3FM SRP7030-8R2FM
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Description |
1 ELEMENT, 1 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 7070-30M, ROHS COMPLIANT 1 ELEMENT, 10 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 7070-30M, ROHS COMPLIANT 1 ELEMENT, 0.15 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 7070-30M, ROHS COMPLIANT 1 ELEMENT, 1.5 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 7070-30M, ROHS COMPLIANT 1 ELEMENT, 0.1 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 7070-30M, ROHS COMPLIANT 1 ELEMENT, 0.2 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 7070-30M, ROHS COMPLIANT Shielded Power Inductors
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File Size |
359.27K /
4 Page |
View
it Online |
Download Datasheet |
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CREE POWER
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
View
it Online |
Download Datasheet |
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