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    EL6204C EL6204CW

Maxim Integrated Products, Inc.
ELANTEC[Elantec Semiconductor]
Part No. EL6204C EL6204CW
OCR Text ...ts and does not cover injury to persons or property or other consequential damages. Printed in U.S.A. October 24, 2001 Elantec Semiconductor, Inc. 675 Trade Zone Blvd. Milpitas, CA 95035 Telephone: (408) 945-1323 (888) ELANTEC Fax: ...
Description Laser Driver Oscillator 激光驱动器振荡

File Size 132.72K  /  2 Page

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    EL6276C EL6276CU

ELANTEC[Elantec Semiconductor]
Part No. EL6276C EL6276CU
OCR Text ...ts and does not cover injury to persons or property or other consequential damages. Printed in U.S.A.
Description 4-Ch Laser Diode Driver Oscillator

File Size 133.10K  /  2 Page

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    ELH0002H ELH883B

ELANTEC[Elantec Semiconductor]
Part No. ELH0002H ELH883B
OCR Text ...ts and does not cover injury to persons or property or other consequential damages Printed in U S A
Description Current Amplifier

File Size 177.17K  /  8 Page

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    ELH0041G 8508701ZX

ELANTEC[Elantec Semiconductor]
Part No. ELH0041G 8508701ZX
OCR Text ...ts and does not cover injury to persons or property or other consequential damages Printed in U S A
Description 0.1 Amp Power Operational Amplifier

File Size 226.66K  /  8 Page

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    HYB25L256160AC HYB25L256160AC-75 HYB25L256160AC-8

INFINEON[Infineon Technologies AG]
Part No. HYB25L256160AC HYB25L256160AC-75 HYB25L256160AC-8
OCR Text ...the health of the user or other persons may be endangered. HYB25L256160AC 256-Mbit Mobile-RAM Table of Contents 1 1.1 1.2 2 3 3.1 3.2 3.2.1 3.2.2 3.2.3 3.2.4 3.3 3.3.1 3.3.2 3.4 3.5 4 4.1 4.2 4.3 5 6 Page Overview . . . . . . . . . ....
Description 256-Mbit Mobile-RAM

File Size 807.30K  /  55 Page

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    HYB25L256160AF HYB25L256160AF-75 HYE25L256160AF HYE25L256160AF-75

INFINEON[Infineon Technologies AG]
Part No. HYB25L256160AF HYB25L256160AF-75 HYE25L256160AF HYE25L256160AF-75
OCR Text ...the health of the user or other persons may be endangered. Data Sheet, Rev. 1.2, April 2004 HYB25L256160AF HYE25L256160AF 256MBit Mobi le- RAM Mobile-RAM Commercial Temperature Range E x t en d e d T e m p e r a t u r e R a n g e ...
Description 256MBit Mobile-RAM

File Size 822.19K  /  56 Page

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    RD12MW RD2.4MW RD7.5MW RD4.3MW RD24MW RD4.7MW RD8.2MW RD6.8MW RD2.7MW RD5.6MW RD3.3MW RD33MW RD9.1MW RD27MW RD2.2MW RD18

NEC, Corp.
NEC Corp.
NEC[NEC]
http://
Part No. RD12MW RD2.4MW RD7.5MW RD4.3MW RD24MW RD4.7MW RD8.2MW RD6.8MW RD2.7MW RD5.6MW RD3.3MW RD33MW RD9.1MW RD27MW RD2.2MW RD18MW RD3.6MW RD6.2MW RD22MW RD5.1MW RD36MW RD2.0MW RD3.0MW RD20MW RD16MW RD10MW RD13MW RD15MW RD3.9MW RD30MW RD39MW RD11MW
OCR Text ...ze risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. ...
Description    ZENER DIODES 200 mW 3-PIN MINI MOLD
surface mount silicon Zener diodes 表面贴装硅稳压二极管
CA-BAYONET

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    RD12M RD2.4M RD7.5M RD4.3M RD24M RD4.7M RD8.2M RD6.8M RD47M RD2.7M RD5.6M RD3.3M RD33M RD9.1M RD2.2M RD18M RD3.6M RD6.2M

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. RD12M RD2.4M RD7.5M RD4.3M RD24M RD4.7M RD8.2M RD6.8M RD47M RD2.7M RD5.6M RD3.3M RD33M RD9.1M RD2.2M RD18M RD3.6M RD6.2M RD5.1M RD2.0M RD36M RD3.9M RD3.0M RD30M RD13M RD27M RD10M RD11M RD43M RD22M RD16M RD39M RD20M RD15M RD10M-T2B RD11M-T2B RD13M-L RD3.3M-L RD33M-L RD4.3M-L RD43M-L RD12M-T1B RD2.2M-T1B RD22M-T1B RD6.2M-T1B RD8.2M-T1B RD3.0M-L RD2.0M-T1B RD3.0M-T2B RD6.2M-L RD2.2M-T2B RD2.0M-T2B RD2.2M-L RD8.2M-L RD8.2M-T2B RD4.3M-T1B RD7.5M-T1B RD6.2M-T2B RD3.0M-T1B RD4.3M-T2B RD2.0M-L RD3.3M-T2B RD4.7M-T1B RD2.7M-L RD4.7M-L RD3.6M-L RD3.6M-T2B RD5.6M-L RD5.6M-T1B RD7.5M-T2B RD2.7M-T1B RD5.6M-T2B RD4.7M-T2B RD7.5M-L RD3.6M-T1B RD3.3M-T1B RD2.7M-T2B RD47M-T2B RD47M-L RD47M-T1B RD30M-T2B RD20M-T2B RD10M-L RD20M-L RD30M-L RD11M-T1B RD5.1M-T1B RD5.1M-T2B RD9.1M-T1B RD9.1M-T2B RD11M-L RD5.1M-L RD9.1M-L RD12M-L RD22M-L RD2.4M-L RD2.4M-T1B RD2.4M-T2B RD3.9M-T2B RD6.8M-L RD6.8M-T1B RD3.9M-L RD3.9M-T1B RD6.8M-T2B RD13M-T2B RD33M-T2B RD43M-T2B RD33M-T1B RD43M-T1B RD13M-T1B RD24M-L RD15M-L RD15M-T2B RD15M-T1B RD12M-T2B RD22M-T2B RD27M-L RD27M-T1B RD27M-T2B RD18M-L RD18M-T2B RD24M-T1B RD24M-T2B RD16M-L RD36M-L RD16M-T1B RD16M-T2B RD36M-T1B RD36M-T2B RD39M-T1B RD39M-T2B RD39M-L RD4.3MB
OCR Text ...ze risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. ...
Description    ZENER DIODES 200 mW 3-PIN MINI MOLD
4.245 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 表面贴装硅稳压二极管
CACOMB 3C 3#8 SKT RECP
Dual type Constant Voltage diode 200mW 3pin SC-59

File Size 65.78K  /  8 Page

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    UPA1715 UPA1715G PA1715

NEC[NEC]
Part No. UPA1715 UPA1715G PA1715
OCR Text ...ze risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. ...
Description MOS Field Effect Transistor
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 65.87K  /  8 Page

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    UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2

NEC[NEC]
Part No. UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2
OCR Text ...ze risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. ...
Description Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor

File Size 64.80K  /  8 Page

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