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  module.gate Datasheet PDF File

For module.gate Found Datasheets File :: 9241    Search Time::2.203ms    
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    CM75DU-12F09

Mitsubishi Electric Semiconductor
Part No. CM75DU-12F09
OCR Text ... = 75A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature m...GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 99.60K  /  4 Page

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    TM25CZ-H TM25CZ-M TM25DZ-H TM25DZ-M

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. TM25CZ-H TM25CZ-M TM25DZ-H TM25DZ-M
OCR Text ... RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between mai...GATE CHARACTERISTICS 4 3 2 VFGM=10V 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 IGT= 10 0 50...
Description MEDIUM POWER GENERAL USE INSULATED TYPE 中功率常规使用绝缘型

File Size 73.41K  /  5 Page

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    CM100DU-12F09

Mitsubishi Electric Semiconductor
Part No. CM100DU-12F09
OCR Text ...= 100A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature m...GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 97.26K  /  4 Page

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    TM25EZ-H TM25EZ-M TM25RZ-H TM25RZ-M TM28RZ-M

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. TM25EZ-H TM25EZ-M TM25RZ-H TM25RZ-M TM28RZ-M
OCR Text ... RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between mai...GATE CHARACTERISTICS 4 3 2 10 1 GATE VOLTAGE (V) VFGM=10V TRANSIENT THERMAL IMPEDANCE (C/W) ...
Description MEDIUM POWER GENERAL USE INSULATED TYPE 中功率常规使用绝缘型

File Size 66.04K  /  5 Page

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    Eupec
Part No. 2ED300C17
OCR Text ...General Designation and symbols Module internal gate resistors Type designation www.EiceDRIVER.com preliminary Page 2 3 3 4 5 5 5 6 6 7 8 9 10 11 12 12 13 13 14 15 16 17 17 20 23 25 25 27 28 29 29 30 32 Page 4 Technical Information ...
Description Dual IGBT Driver

File Size 532.50K  /  32 Page

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    CM75DU-24H09

Mitsubishi Electric Semiconductor
Part No. CM75DU-24H09
OCR Text ...ion to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 m...Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturati...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 94.67K  /  4 Page

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    TM400DZ-2H

POWEREX[Powerex Power Semiconductors]
Part No. TM400DZ-2H
OCR Text Module 400 Amperes/1600 Volts B Q - THD (4 TYP.) A1 L (TYP.) K1 B R - DIA. (3 TYP.) K2 A2 K2 G2 CEHN K1 G1 KH M J...Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Vo...
Description Dual SCR Module (400 Amperes/1600 Volts)

File Size 81.20K  /  4 Page

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    CM75DU-12H09

Mitsubishi Electric Semiconductor
Part No. CM75DU-12H09
OCR Text ...ion to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 m...Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturati...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 95.00K  /  4 Page

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    TM55CZ-24 TM55CZ-2H TM55DZ-24 TM55DZ-2H

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. TM55CZ-24 TM55CZ-2H TM55DZ-24 TM55DZ-2H
OCR Text ... RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between mai...GATE CHARACTERISTICS 4 3 2 10 1 VFGM=10V PGM=5.0W 7 5 VGT=2.0V PG(AV)= 3 0.50W 2 IGT= 0 10 10...
Description HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE

File Size 63.27K  /  5 Page

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    TM55CZ-H TM55CZ-M TM55DZ-H TM55DZ-M

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. TM55CZ-H TM55CZ-M TM55DZ-H TM55DZ-M
OCR Text ... RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between mai...GATE CHARACTERISTICS VFGM=10V TRANSIENT THERMAL IMPEDANCE (C/W) 4 3 2 GATE VOLTAGE (V) ...
Description MEDIUM POWER GENERAL USE INSULATED TYPE

File Size 62.07K  /  5 Page

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For module.gate Found Datasheets File :: 9241    Search Time::2.203ms    
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