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				hitachi
Part No.	HM5118165SERIES 5118165
OCR Text	...rs Extended Data Out (EDO) Page Mode as a high speed access mode. It is packaged in 42-pin plastic SOJ and 50-pin plastic TSOP II. Features * Single 5 V (10%) * Access time : 50 ns/60 ns/70 ns (max) * Power dissipation Active mode : 10...
Description	From old datasheet system
File Size	498.55K / 33 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM51W18165J-5 HM51W18165J-6 HM51W18165J-7 HM51W18165LJ-5 HM51W18165LJ-6 HM51W18165LJ-7 HM51W18165LTT-5 HM51W18165LTT-6 HM51W18165LTT-7 HM51W18165TT-5 HM51W18165TT-6 HM51W18165TT-7 HM51W16165TT-7 HM51W16165LJ-7 HM51W16165TT-6 HM51W16165LJ-5 HM51W16165LJ-6 HM51W16165LTT-5 HM51W16165LTT-6 HM51W16165LTT-7 HM51W16165TT-5
OCR Text	...er Extended Data Out (EDO) Page Mode as a high speed access mode. They have package variations of standard 400-mil 42-pin plastic SOJ and 400-mil 50-pin plastic TSOP. Features * Single 3.3 V (0.3 V) * Access time: 50 ns/60 ns/70 ns (max...
Description	16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
File Size	442.57K / 36 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	HYM322005GS-60 HYM322005GS-50 HYM322005S-60 HYM322005S-50 HYM322005S HM322005 Q67100-Q2069 Q67100-Q2066 Q67100-Q2067 Q67100-Q2068
OCR Text	Mode - EDO Version) HYM 322005S/GS-50/-60 * SIMM modules with 2 097 152 words by 32-bit organization for PC main memory application Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 n...
Description	2M x 32-Bit Dynamic RAM Module 2M x 32 Bit EDO DRAM Module 2M x 32 Bit DRAM Module 2M x 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version) From old datasheet system 2M x 32-Bit Dynamic RAM Module 2M X 32 EDO DRAM MODULE, 50 ns, SMA72
File Size	84.99K / 10 Page	View it Online	Download Datasheet

				Oki Electric Industry Co., Ltd.
Part No.	MSC23CV16458D-XXBS4 MSC23CV16458D MSC23CV16458D-60BS4
OCR Text	MODE TYPE WITH EDO DESCRIPTION The MSC23CV16458D-xxBS4 is an 1,048,576-word x 64-bit CMOS dynamic random access memory module which is composed of four 16Mb(1Mx16) DRAMs in TSOP packages mounted with four decoupling capacitors. This is ...
Description	1M X 64 EDO DRAM MODULE, 60 ns, DMA144 SODIMM-144 From old datasheet system 1,048,576-word x 64-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
File Size	54.39K / 10 Page	View it Online	Download Datasheet

				OKI SEMICONDUCTOR CO., LTD.
Part No.	MSM51V16165F-50TS-K MSM51V16165F-60TS-K MSM51V16165F-70TS-K
OCR Text	... 16-bit dynamic ram : fast page mode type with edo 1/16 description the msm51v16165f is a 1,048,576-word 16-bit dynamic ram fabricated in oki?s silicon-gate cmos technology. the msm51v16165f achieves high integration, high-speed...
Description	1,048,576-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 1,048,576-Word ??16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
File Size	231.36K / 16 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	MC-42S8LFG64S
OCR Text	...ion. features ? edo (hyper page mode) ? 8,388,608 words by 64 bits organization ? fast access and cycle time family access time r/w c y cle time edo (h y per pa g e mode) power consumption (max.) (max.) (min.) cycle time (min.) active stand...
Description	8 M-Word By 64-Bit Synchronous Dynamic RAM Module(同步动态RAM 模块)
File Size	269.47K / 32 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	MC-42S4LFG64S
OCR Text	...ion. features ? edo (hyper page mode) ? 4,194,304 words by 64 bits organization ? fast access and cycle time family access time r/w c y cle time edo (h y per pa g e mode) power consumption (max.) (max.) (min.) cycle time (min.) active stand...
Description	3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)
File Size	269.01K / 32 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112805F-6 HM5112805FLTD-6 HM5112805FTD-6
OCR Text	...er Extended Data Out (EDO) Page Mode as a high speed access mode. They are packaged in 32-pin plastic TSOPII. Features * Single 3.3 V supply: 3.3 V 0.3 V * Access time: 60 ns (max) * Power dissipation Active: 720 mW (max) (HM5112805F)...
Description	DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
File Size	460.85K / 34 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY51V18163HGJ HY51V18163HGJ-5 HY51V18163HGJ-6 HY51V18163HGJ-7 HY51V18163HGT HY51V18163HGT-5 HY51V18163HGT-7
OCR Text	...PageMode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)18163HG/HGL to be packaged in standard 400mil 42pin SOJ ...EDO page mode current Average power supply current EDO page mode (tPC=tPC min) CMOS interface ( /RAS...
Description	1M x 16Bit EDO DRAM
File Size	86.25K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY51V65163HG HY51V65163HGJ-45 HY51V65163HGJ-5 HY51V65163HGJ-6 HY51V65163HGT-5
OCR Text	...guration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The a...EDO cycle, tHPC 4. VIH>=Vcc-0.2V, 0V<=VIL<=0.2V 5. L-Version Rev.0.1/Apr.01 4 HY51V(S)65163...
Description	4M x 16Bit EDO DRAM
File Size	78.37K / 11 Page	View it Online	Download Datasheet

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