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  mocvd Datasheet PDF File

For mocvd Found Datasheets File :: 152    Search Time::5.343ms    
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    SZM-2066Z SZM2066Z SZM2066ZPCK-EVB2 SZM2066ZPCK-EVB3 SZM2066ZSQ SZM2066ZSR

RF Micro Devices
Part No. SZM-2066Z SZM2066Z SZM2066ZPCK-EVB2 SZM2066ZPCK-EVB3 SZM2066ZSQ SZM2066ZSR
OCR Text ... technology and fabricated with mocvd for an ideal comb ination of low cost and high reliability. this product is specifically designed as a final or driver stage for 802.16 and 802.11b/g equipment in the 2.4ghz to 2.7ghz bands. it can run ...
Description 2.4GHz to 2.7GHz 2W POWER AMPLIFIER

File Size 1,062.95K  /  18 Page

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    SZM-3066Z SZM3066Z SZM3066ZPCK-EVB1 SZM3066ZSQ

RF Micro Devices
Part No. SZM-3066Z SZM3066Z SZM3066ZPCK-EVB1 SZM3066ZSQ
OCR Text ... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. this product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3ghz to 3.8ghz bands. it can run from a 3v to 6...
Description 3.3GHz to 3.8GHz 2W POWER AMPLIFIER

File Size 441.60K  /  12 Page

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    SZM-3166Z

RF Micro Devices
Part No. SZM-3166Z
OCR Text ... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. this product is specifically designed for 802.16 customer premises equipment (cpe) terminals in the 3.3ghz to 3.6ghz bands. it can run from a 3...
Description 3.3GHz to 3.6GHz 2W POWER AMPLIFIER

File Size 327.81K  /  12 Page

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    SZM-5066Z SZM5066ZPCK-410

RF Micro Devices
Part No. SZM-5066Z SZM5066ZPCK-410
OCR Text ... technology and fabricated with mocvd for an ideal comb ination of low cost and high reliability. this product is specifically designed for 802.11a/n and 802.16e applications in the 4.9ghz to 5.85ghz bands and can operate from a single vol...
Description 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER

File Size 1,132.53K  /  14 Page

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    Roithner LaserTechnik G...
Part No. LED34-HIGH-SMD3
OCR Text ...es grown on inas substrates by mocvd. inas is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for god electron confinement. led34-high-smd3 has a stable ouput power and a lifetime more then 800...
Description Mid-Infrared Light Emitting Diode

File Size 253.46K  /  2 Page

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    Roithner LaserTechnik G...
Part No. LED34-HIGH-SMD5R
OCR Text ...es grown on inas substrates by mocvd. inas is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for god electron confinement. led34-high-smd5r has a stable ouput power and a lifetime more then 80...
Description Mid-Infrared Light Emitting Diode

File Size 258.85K  /  2 Page

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    Roithner LaserTechnik G...
Part No. LED34-HIGH-SMD5
OCR Text ...es grown on inas substrates by mocvd. inas is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for god electron confinement. led34-high-smd5 has a stable ouput power and a lifetime more then 800...
Description Mid-Infrared Light Emitting Diode

File Size 257.21K  /  2 Page

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    SZA2044ZPCK-EVB2 SZA2044ZSQ

RF Micro Devices
Part No. SZA2044ZPCK-EVB2 SZA2044ZSQ
OCR Text ... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. this product is spe- cifically designed as a final stage 802.11b/g and 802.16 equipment in the 2.0ghz to 2.7ghz bands. it can run from a 3v to...
Description 700MHz to 2.7GHz 5V 1W Power Amplifier

File Size 429.97K  /  12 Page

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    LD63D4S-A

Sensortechnics GmbH
Part No. LD63D4S-A
OCR Text ...ew ld63d4s- a / b / c -is ,a ,mocvd ,grown ,635nm ,band ,i ng aalp ,laser ,diode ,with ,quantum ,well ,structure. it's an attractive light source, with a typical lig ht output power of 5mw for optoelectronic devices such as optical le...
Description Laser Pointer

File Size 631.29K  /  6 Page

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For mocvd Found Datasheets File :: 152    Search Time::5.343ms    
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