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Roithner LaserTechnik G...
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| Part No. |
LED34-HIGH-SMD3
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| OCR Text |
...es grown on inas substrates by mocvd. inas is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for god electron confinement. led34-high-smd3 has a stable ouput power and a lifetime more then 800... |
| Description |
Mid-Infrared Light Emitting Diode
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| File Size |
253.46K /
2 Page |
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it Online |
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Roithner LaserTechnik G...
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| Part No. |
LED34-HIGH-SMD5R
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| OCR Text |
...es grown on inas substrates by mocvd. inas is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for god electron confinement. led34-high-smd5r has a stable ouput power and a lifetime more then 80... |
| Description |
Mid-Infrared Light Emitting Diode
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| File Size |
258.85K /
2 Page |
View
it Online |
Download Datasheet
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Roithner LaserTechnik G...
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| Part No. |
LED34-HIGH-SMD5
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| OCR Text |
...es grown on inas substrates by mocvd. inas is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for god electron confinement. led34-high-smd5 has a stable ouput power and a lifetime more then 800... |
| Description |
Mid-Infrared Light Emitting Diode
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| File Size |
257.21K /
2 Page |
View
it Online |
Download Datasheet
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Sensortechnics GmbH
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| Part No. |
LD63D4S-A
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| OCR Text |
...ew ld63d4s- a / b / c -is ,a ,mocvd ,grown ,635nm ,band ,i ng aalp ,laser ,diode ,with ,quantum ,well ,structure. it's an attractive light source, with a typical lig ht output power of 5mw for optoelectronic devices such as optical le... |
| Description |
Laser Pointer
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| File Size |
631.29K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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