|
|
 |
NXP Semiconductors N.V.
|
Part No. |
BYW29EX-200
|
OCR Text |
...tance from both terminals f = 1 mhz - 10 - pf to external heatsink thermal resistances symbol parameter conditions min. typ. max. unit r th ...895 v i f = 8 a - 0.92 1.05 v i f = 20 a - 1.1 1.3 v i r reverse current v r = v rwm ; t j = 100... |
Description |
Ultrafast power diode BYW29EX-200<SOD113 (SOD113)|<<http://www.nxp.com/packages/SOD113.html<1<week 32, 2004,;
|
File Size |
120.42K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Hitachi
|
Part No. |
PF0031
|
OCR Text |
...
PF0031: For NMT900 890 to 925 MHz
Features
* High stability: Load VSWR 20:1 * Low power control current: 400 A * Thin package: 5 mm t...895
900
905
910
10 915
Frequency f (MHz) Pout, T, VSWR (in) vs. Frequency 6 20 Pin = ... |
Description |
MOS FET Power Amplifier Module
|
File Size |
81.81K /
13 Page |
View
it Online |
Download Datasheet
|
|
|
 |
TriQuint Semiconductor, Inc. TRIQUINT SEMICONDUCTOR INC
|
Part No. |
TGF2021-04-SD
|
OCR Text |
...ct description key features 900 mhz low noise application board performance dc-4 ghz packaged power phemt bias conditions: vd = 5 v, idq ...895 96.265 0.024 17.704 0.712 -173.53 0.5 0.919 -165.822 9.652 90.224 0.025 14.82 0.714 -177.448 0.6... |
Description |
DC-4 GHz Packaged Power pHEMT 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
File Size |
531.83K /
16 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|