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MICROSEMI CORP-SCOTTSDALE
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| Part No. |
1N6126AUS JAN1N6162US
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| OCR Text |
...for 1n6103us and 1n6138us) ? jans available for 1n6103aus thru 1n6118aus per mil-prf-19500/516 as well as further options for screening in accordance with mil-prf-19500 for jans on all others in this series by using a ?msp? prefix, e.... |
| Description |
1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
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| File Size |
119.14K /
5 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
jansR2N7278
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| OCR Text |
jansR2N7278
Formerly FRL234R4
June 1998
4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET
Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enha... |
| Description |
4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET
4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFET
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| File Size |
38.88K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
jansR2N7275
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| OCR Text |
jansR2N7275
Formerly FRL230R4
June 1998
5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET
Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enha... |
| Description |
5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET
5A/ 200V/ 0.500 Ohm/ Rad Hard/ N-Channel Power MOSFET
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| File Size |
38.53K /
7 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
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| Part No. |
jans1N5712UR-1 1N5711UR-1 1N5712UR-1 1N6857UR-1 1N6858UR-1 CDLL2810 CDLL5711 CDLL5712 CDLL6263 CDLL6857 CDLL6858 JAN1N5711UR-1 JAN1N5712UR-1 jans1N5711UR-1 JANTXV1N5711UR-1 JANTXV1N5712UR-1 JANTX1N5711UR-1 JANTX1N5712UR-1
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| OCR Text |
jans PER MIL-PRF-19500/444 * 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and jans PER MIL-PRF 19500/445 * SCHOTTKY BARRIER DIODES * LEADLESS PACKAGE FOR SURFACE MOUNT * METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
1N5711UR-1 1N5712UR-... |
| Description |
Schottky Rectifier
5-V Precision Micropower Shunt Voltage Reference, 1% accuracy 3-SOT-23 -40 to 125 0.033 A, SILICON, SIGNAL DIODE, DO-213AA
SCHOTTKY BARRIER DIODES 0.033 A, SILICON, SIGNAL DIODE, DO-213AA
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| File Size |
32.59K /
2 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
DSB5712 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810
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| OCR Text |
...LLY BONDED
JANTX, JANTXV AND jans JANTX, JANTXV AND jans
1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712
MAXIMUM RATINGS
Operating Temperature: -65C to +150C Storage Temperature: -65C to +150C Operating Current: 5711 ty... |
| Description |
0.075 A, SILICON, SIGNAL DIODE, DO-35
SCHOTTKY BARRIER DIODES
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| File Size |
30.56K /
2 Page |
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it Online |
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MICROSEMI CORP-LAWRENCE
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| Part No. |
MICROSEMICORP-LAWRENCE-jans2N2484UBC
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| OCR Text |
... jantx jantxv jans * available to jans quality level only. absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v... |
| Description |
50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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| File Size |
328.19K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
1N6631 1N6626 1N6626_04 1N6627 1N6628 1N6629 1N6630
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| OCR Text |
...ccordance with MILPRF-19500 for jans by using a "MSP" prefix, e.g. MSP6626, MSP6629, etc. Surface mount equivalents also available in a square endcap MELF configuration with "US" suffix (see separate data sheet for 1N6626US thru 1N6631US) *... |
| Description |
VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
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| File Size |
239.68K /
4 Page |
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it Online |
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Price and Availability
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