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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
http://
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| Part No. |
BUZ101 C67078-S1350-A2 BUZ101E3045 BUZ101STS
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| OCR Text |
...t Symbol Values 29 Unit A
ID idpuls
116
TC = 31 C
Pulsed drain current
TC = 25 C
Avalanche energy, single pulse
EAS
70 dv/dt 6
mJ
ID = 29 A, VDD = 25 V, RGS = 25 L = 83 H, Tj = 25 C
Reverse diode dv/dt kV/s
IS = 2... |
| Description |
N-Channel SIPMOS Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
From old datasheet system
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| File Size |
185.24K /
9 Page |
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SIEMENS AG
Infineon Technologies AG
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| Part No. |
BUZ102S-4
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| OCR Text |
... Symbol Values 6.4 Unit A
ID idpuls
25.6
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche energy, single pulse
EAS
245 dv/dt 6
mJ
ID = 6.4 A, VDD = 25 V, RGS = 25 L = 12 mH, Tj = 25 C
Reverse dio... |
| Description |
6.4 A, 55 V, 0.028 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS ? Power Transistor
Quad-Channel SIPMOS Power Transistor
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| File Size |
91.45K /
8 Page |
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Infineon
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| Part No. |
BUZ103S-4
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| OCR Text |
... Symbol Values 5.3 Unit A
ID idpuls
21.2
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche energy, single pulse
EAS
140 dv/dt 6
mJ
ID = 5.3 A, VDD = 25 V, RGS = 25 L = 9.97 mH, Tj = 25 C
Reverse d... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
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| File Size |
90.04K /
8 Page |
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Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
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| Part No. |
BUZ103SL-4
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| OCR Text |
... Symbol Values 4.8 Unit A
ID idpuls
19.2
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche energy, single pulse
EAS
140 dv/dt 6
mJ
ID = 4.8 A, VDD = 25 V, RGS = 25 L = 12 mH, Tj = 25 C
Reverse dio... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
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| File Size |
106.69K /
8 Page |
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SIEMENS AG
Infineon
Siemens Semiconductor Group
|
| Part No. |
BUZ103SL Q67040-S4008-A2
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| OCR Text |
...sed drain current
TC = 25 C
idpuls
112
E AS
Avalanche energy, single pulse
ID = 28 A, V DD = 25 V, RGS = 25 L = 357 H, Tj = 25 C
mJ
140
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by ... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) 28 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
High Speed CMOS Logic 12-Stage Binary Counter 16-PDIP -55 to 125 SIPMOS功率晶体管（N通道增强模式的逻辑电平雪崩额定dv / dt的评价）
SIPMOS ? Power Transistor
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| File Size |
118.10K /
8 Page |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BUZ103 C67078-S1352-A2 BUZ103E3044 BUZ103E3044A BUZ103E3045A
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| OCR Text |
...t Symbol Values 40 Unit A
ID idpuls
160
TC = 23 C
Pulsed drain current
TC = 25 C
Avalanche energy, single pulse
EAS
100 dv/dt 6
mJ
ID = 40 A, VDD = 25 V, RGS = 25 L = 63 H, Tj = 25 C
Reverse diode dv/dt kV/s
IS = ... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
From old datasheet system
SIPMOS ? Power Transistor
N-Channel SIPMOS Power Transistor
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| File Size |
186.56K /
9 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BUZ10L C67078-S1329-A2
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| OCR Text |
...t Symbol Values 23 Unit A
ID idpuls
92
TC = 26 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
23 1.3 mJ
ID = 23 ... |
| Description |
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
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| File Size |
129.40K /
9 Page |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BUZ10 C67078-S1300-A2
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| OCR Text |
...t Symbol Values 23 Unit A
ID idpuls
92
TC = 26 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
23 1.3 mJ
ID = 23 ... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS功率晶体管（N通道增强模式雪崩级）
SIPMOS ? Power Transistor
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| File Size |
131.15K /
9 Page |
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it Online |
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