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For id-19a Found Datasheets File :: 1922 Search Time::3.079ms
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				Fairchild Semiconductor
Part No.	FDS2672
OCR Text	...Max rDS(on) = 70m at VGS = 10V, ID = 3.9A Max rDS(on) = 80m at VGS = 6V, ID = 3.5A Fast switching speed High performance trench technology f...1 Pin 1 S S S G 8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbo...
Description	N-Channel UltraFET Trench㈢ MOSFET 200V, 3.9A, 70mз
File Size	342.49K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7465
OCR Text	...FET RDS(on) max 0.28@VGS = 10V ID 1.9A l VDSS 150V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Charact...
Description	Power MOSFET(Vdss=150V/ Id=1.9A) Power MOSFET(Vdss=150V, Id=1.9A)
File Size	104.91K / 8 Page	View it Online	Download Datasheet

				http:// FAIRCHILD[Fairchild Semiconductor]
Part No.	FDMA2002NZ
OCR Text	...aximum Ratings Symbol VDS VGS ID Drain-Source Voltage Gate-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 30 12...1.5 0.65 -55 to +150 W C Thermal Characteristics RJA RJA RJA RJA Thermal Resistance, Junction-to...
Description	Dual N-Channel PowerTrench MOSFET
File Size	122.32K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF7601 IRF7601TR
OCR Text	...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG Continuous Drain Current, VGS @ 4.5V Continuo...1.8 14 12 5.0 -55 to + 150 Units A W mW/C V V/ns C Thermal Resistance Parameter RJA Ma...
Description	20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package Power MOSFET(Vdss=20V, Rds(on)=0.035ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm) N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管） N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
File Size	110.37K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7603
OCR Text	...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG Continuous Drain Current, VGS @ 10V Continuou...1.8 14 20 5.0 -55 to + 150 Units A W mW/C V V/ns C Thermal Resistance Parameter RJA Ma...
Description	30V Single N-Channel HEXFET Power MOSFET in a Micro 8 package Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
File Size	107.39K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFR220NPBF
OCR Text	...SS RDS(on) max (m) 200V 600 ID 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance I...1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topologies l Telecom 48V input Forw...
Description	(IRFR220NPBF / IRFU220NPBF) HEXFET Power MOSFET
File Size	245.09K / 10 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CET4401B
OCR Text	... otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -40 Units V V A A W C 20 -4.9 -20 3 -55 to 150 Maximum Power Dissipation Oper...1 Rev 1. 2006.January http://www.cetsemi.com CET4401B Electrical Characteristics Parameter ...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	360.42K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS3570_00 FDS3570 FDS357000
OCR Text	... 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 8 Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25C unless otherwise noted Parameter Ratings 80 20 (Note ...
Description	80V N-Channel PowerTrench MOSFET 80V N-Channel PowerTrench MOSFET
File Size	76.78K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NDS9953A
OCR Text	...ximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A= 25C unl...1.6 1 0.9 -55 to 150 C TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERIST...
Description	Dual P-Channel Enhancement Mode Field Effect Transistor
File Size	298.22K / 10 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation
Part No.	203N
OCR Text	...imum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drai...1.6 -55 to +150 Units V V A W C Thermal Characteristics RJA RJB RJC Thermal Resistance, Junc...
Description	N-Channel 2.5V Specified PowerTrench BGA MOSFET
File Size	133.13K / 6 Page	View it Online	Download Datasheet

For id-19a Found Datasheets File :: 1922 Search Time::3.079ms
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