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For high-freq Found Datasheets File :: 18433 Search Time::2.656ms
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				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	...t IGBTTM is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBTTM combined with an APT freewheelin...Freq. Switching to 20KHz * Low Tail Current * Ultra Low Leakage Current * RBSOA and SCSOA Rated * Ul...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF60BR
OCR Text	high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collecto...Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated G C E G E ...
Description	Fast IGBT 600V 75A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	80.83K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT50GF60HR
OCR Text	high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collecto...Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated C E G C G E All ...
Description	Fast IGBT 600V 55A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	25.29K / 2 Page	View it Online	Download Datasheet

				Austria Mikro Systems AMSCO[austriamicrosystems AG]
Part No.	AS3502
OCR Text	...eneral Description AS3502 is a high performance 13-bit linear feature Codec/Filter with 8 kHz sampling rate specifically tailored to implem...Freq. Gen. SQ. S1, S2 CP, CP RP, RO SG DC Seq. Caden. Rep. dB 0/-48 Contr. MCL...
Description	13-BIT LINEAR FEATURE CODEC WITH ANALOGUE FRONTEND
File Size	167.51K / 29 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	... Bias: VDS = 2 V, IDS = 25 mA * High Associated Gain: 14.0 dB Typical at 4 GHz * High Output Power: 21.0 dBm Typical P1 dB at 4 GHz chip....Freq. GHz 1.0 2.0 4.0 6.0 8.0 NFO dB 0.4 0.4 0.55 0.8 1.0 opt Mag 0.78 0.55 0.39 0.41 0.46 Ang 13 27...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	... Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1 dB at 4 GHz * Cost E...Freq. GHz 0.5 1.0 2.0 4.0 6.0 8.0 NFO dB 0.35 0.4 0.4 0.5 0.8 1.1 opt Mag 0.93 0.85 0.70 0.39 0.36 0...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text	... Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1dB at 4 GHz * Cost Ef...Freq. GHz 0.5 1.0 2.0 4.0 6.0 8.0 NFO dB 0.45 0.5 0.6 0.8 1.0 1.3 opt Mag 0.93 0.87 0.73 0.45 0.42 0...
Description	ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	High Associated Gain: 13.0 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Output Power: 20.0 dBm typical P 1 dB at 4 GHz * Lo...Freq. GHz 1.0 2.0 4.0 6.0 8.0 NFO dB 0.8 0.9 1.2 1.4 1.7 opt Mag 0.88 0.75 0.48 0.46 0.53 Ang 41 85 ...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	High Associated Gain: 9.5 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P1 dB at 12 GHz This GaAs FET device has a nominal 0...Freq. GHz 4.0 6.0 8.0 12.0 16.0 NFO dB 0.4 0.7 0.8 1.1 1.5 opt Mag 0.60 0.32 0.25 0.23 0.32 Ang 30 6...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effective Ceramic Microstrip Pa...Freq. GHz 4.0 6.0 8.0 12.0 14.0 NFO dB 0.8 1.1 1.2 1.4 1.6 opt Mag .63 .47 .40 .52 .57 Ang 93 138 -1...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

For high-freq Found Datasheets File :: 18433 Search Time::2.656ms
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