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  high voltage vceo 160v Datasheet PDF File

For high voltage vceo 160v Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    ASI10749 VMB80-28S VHB25-12S

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10749 VMB80-28S VHB25-12S
Description NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,vceo: 36 V,Vebo: 4.0 V))

File Size 15.55K  /  1 Page

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    DS1339U-33 DS1339U-33_ DS1339 DS1339C-2 DS1339C-2_ DS1339C-3 DS1339C-3_ DS1339C-33 DS1339C-33_ DS1339U-2 DS1339U-3 DS133

MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
http://
Part No. DS1339U-33 DS1339U-33_ DS1339 DS1339C-2 DS1339C-2_ DS1339C-3 DS1339C-3_ DS1339C-33 DS1339C-33_ DS1339U-2 DS1339U-3 DS1339U-3_
Description    I2C Serial Real-Time Clock
TRANS NPN BIPOL DUAL 160v SOT363
TRANS NPN DARL 40V SMD SOT-23
TRANSISTOR, NPN, SWITCHING , GENERAL PURPOSE, 3-PIN SOT-23
TRANS NPN 160v 350MW SMD SOT-23

File Size 277.06K  /  18 Page

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    2SC5477

Isahaya Electronics Corporation
Part No. 2SC5477
Description 150mW SMD NPN transistor, maximum rating: 20V vceo, 50mA Ic, 50 to (typ)148 hFE. high Frequency Amplification

File Size 113.56K  /  4 Page

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    Powerex, Inc.
Part No. CM150DUS-12F
Description IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter voltage, vceo:600V 150 A, 600 V, N-CHANNEL IGBT

File Size 140.03K  /  4 Page

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    CSD882P CSD882R CSD882 CSD882E CSD882Q

CDIL[Continental Device India Limited]
Part No. CSD882P CSD882R CSD882 CSD882E CSD882Q
Description 10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications

File Size 133.82K  /  3 Page

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    PMBT5550 PMBT5550_3 PMBT5550215

NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
Part No. PMBT5550 PMBT5550_3 PMBT5550215
Description NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; vceo max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system

File Size 45.38K  /  8 Page

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    USHA India LTD
Part No. UN100
Description NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD

File Size 46.86K  /  2 Page

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    BCX52 BCX51 BCX53 BCX53-16 BCX53-10 BCX51-10 BCX51-16 BCX52-10 BCX52-16

INFINEON[Infineon Technologies AG]
Part No. BCX52 BCX51 BCX53 BCX53-16 BCX53-10 BCX51-10 BCX51-16 BCX52-10 BCX52-16
Description General Purpose Transistors - SOT89; vceo=60V; hFE=100...250
General Purpose Transistors - SOT89; vceo=45V; hFE=100...250
General Purpose Transistors - SOT89; vceo=45V; hFE=40...250
General Purpose Transistors - SOT89; vceo=80V; hFE=63...160
General Purpose Transistors - SOT89; vceo=60V; hFE=63...160
General Purpose Transistors - SOT89; vceo=45V; hFE=63...160
PNP SILICON AF TRANSISTORS

File Size 138.57K  /  5 Page

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    CDIL[Continental Device India Limited]
Part No. CSB772P CSB772R CSB772 CSB772E CSB772Q
Description 10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching

File Size 132.88K  /  3 Page

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    2SD1857A 2SD1918 2SD2211

ROHM[Rohm]
Part No. 2SD1857A 2SD1918 2SD2211
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power Transistor (160v 1.5A)
Power Transistor (160v , 1.5A)

File Size 62.17K  /  1 Page

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