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  h-bridge Datasheet PDF File

For h-bridge Found Datasheets File :: 10978    Search Time::3.984ms    
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    CM150DY-28H

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM150DY-28H
OCR Text H-Series Module 150 Amperes/1400 Volts A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P - DIA. (2 TYP...bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel d...
Description Dual IGBTMOD 150 Amperes/1400 Volts

File Size 69.57K  /  4 Page

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    CM200DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM200DY-28H
OCR Text ...) R TAB#110 t=0.5 L E H M Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected ...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.59K  /  4 Page

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    CM300DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM300DY-28H
OCR Text ...- M6 THD. (3 TYP) N K K G H TAB #110, t = 0.5 Q N K E J N Description: Mitsubishi IGBT Modules are designed for use in swi...bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel ...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.35K  /  4 Page

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    CM50DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM50DY-28H
OCR Text ...YP.) R R TAB#110 t=0.5 H L H P E G Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a r...
Description IGBT Modules:1400V
MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 48.00K  /  4 Page

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    CM75DY-28H

Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM75DY-28H
OCR Text ...YP.) R R TAB#110 t=0.5 H L H P E G Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a r...
Description HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1400V

File Size 47.54K  /  4 Page

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    CWR06 CWR06CB155J CWR06CB155K CWR06CB155M CWR06CC155J CWR06CC155K CWR06CC155M CWR06CH155J CWR06CH155K CWR06CH155M CWR06D

Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. CWR06 CWR06CB155J CWR06CB155K CWR06CB155M CWR06CC155J CWR06CC155K CWR06CC155M CWR06CH155J CWR06CH155K CWR06CH155M CWR06DB155J CWR06DB155K CWR06DB155M CWR06DC155J CWR06DC155K CWR06DC155M CWR06DH155J CWR06DH155K CWR06DH155M CWR06FB155J CWR06FB155K CWR06FB155M CWR06FC155J CWR06FC155K CWR06FC155M CWR06FH155J CWR06FH155K CWR06FH155M CWR06HB155J CWR06HB155K CWR06HB155M CWR06HC155J CWR06HC155K CWR06HC155M CWR06HH155J CWR06HH155K CWR06HH155M CWR06JB155J CWR06JB155K CWR06JB155M CWR06JC155J CWR06JC155K CWR06JC155M CWR06JH155J CWR06JH155K CWR06JH155M CWR06KB155J CWR06KB155K CWR06KB155M CWR06KC155J CWR06KC155K CWR06KC155M CWR06KH155J CWR06KH155K CWR06KH155M CWR06MB155J CWR06MB155K CWR06MB155M CWR06MC155J CWR06MC155K CWR06MC155M CWR06MH155J CWR06MH155K CWR06MH155M CWR06NB155J CWR06NB155K CWR06NB155M CWR06NC155J CWR06NC155K CWR06NC155M CWR06NH155J CWR06NH155K CWR06NH155M WR06DH155J WR06CB155M WR06CH155M
OCR Text ...TION FINISH B = Gold. Standard. H = Solder Plate. C = Solder Dipped 155 CAPACITANCE K CAPACITANCE TOLERANCE K = 10% M = 20% J = 5% B FAIL...bridge method at, or referred to, a frequency of 120 Hz and a temperature of + 25C. Leakage Current:...
Description Solid Tantalum Chip Capacitors MIDGET Military, MIL-PRF-55365/4 Qualified 固体钽芯片电容器侏儒军事,军用,脉冲重复频率,四分之五万五千三百六十五合
Solid Tantalum Chip Capacitors MIDGET Military/ MIL-PRF-55365/4 Qualified

File Size 93.83K  /  7 Page

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    FWL08G FWL10G FWL005G FWL01G FWL02G FWL04G FWL06G

Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
Part No. FWL08G FWL10G FWL005G FWL01G FWL02G FWL04G FWL06G
OCR Text ...RMS VDC IF(AV) IFSM It VF IR IR(H) Trr CJ RJA TJ TSTG Ta = 25 C Ta = 100 C 2 FWL FWL 005G 01G 50 35 50 100 70 100 FWL 02G 200 140 200 FWL 04G 400 280 400 1.0 30 10 1.3 10 1.0 FWL 06G 600 420 600 FWL 08G 800 560 800 FWL 10...
Description FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS 快恢复玻璃钝化桥式整流器

File Size 19.96K  /  2 Page

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    IRFW730 IRFW730B IRFI730B IRFW730BTM IRFW730BTMNL

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFW730 IRFW730B IRFI730B IRFW730BTM IRFW730BTMNL
OCR Text ...t vs Case Temperature (t), T h e r m a l R e s p o n s e 10 0 D = 0 .5 0 .2 0 .1 N o te s : 1 . Z J C (t) = 1 .7 1 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 10 -1 0 .0 5 0 ....
Description 400V N-Channel B-FET / Substitute of IRFW730A
400V N-Channel MOSFET

File Size 678.85K  /  9 Page

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    IRFW740 IRFW740B IRFI740B IRFW740BTM IRFW740BTMNL

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFW740 IRFW740B IRFI740B IRFW740BTM IRFW740BTMNL
OCR Text ...t vs Case Temperature (t), T h e r m a l R e s p o n s e 10 0 D = 0 .5 0 .2 10 -1 N o te s : 1 . Z J C (t) = 0 .9 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 0 .0 5 0 .0 ...
Description 400V N-Channel B-FET / Substitute of IRFW740A
400V N-Channel MOSFET

File Size 676.22K  /  9 Page

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    LWN1701-6 LWN1740-6M1 LWN-1601-6 LWN-1801-6 LWR1240-6M1 LWR1701-6 LWN2880-6 LWR1801-6 LWN1240-6M1 LWN-2660-6 LWR-1601-6

POWER-ONE[Power-One]
Part No. LWN1701-6 LWN1740-6M1 LWN-1601-6 LWN-1801-6 LWR1240-6M1 LWR1701-6 LWN2880-6 LWR1801-6 LWN1240-6M1 LWN-2660-6 LWR-1601-6 LWR1740-6M1
OCR Text ....35 mm/5 gn 0.05 g2/Hz >600'000 h Options Input and output undervoltage monitoring Output voltage adjustment 10 V...110% of Uo nom Remote on/off Multi option choice (D1...D5, R, S) via Sub-D connector Built-in second input fuse in the n...
Description 125 and 250 Watt AC-DC Converters

File Size 109.68K  /  5 Page

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