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ST Microelectronics
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| Part No. |
STD86N3LH5
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| OCR Text |
...fet? v power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) high avalanche ruggedness low gate...319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions ar... |
| Description |
Power MOSFETs
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| File Size |
634.08K /
14 Page |
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Jewel Hill Electronic Co., Ltd.
Cree, Inc.
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| Part No. |
DS1RGNA1BNP/4/BNP/30 DSX1P1A-01-BNP DSX1P1A-06-BNP
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| OCR Text |
...y of cords available called the ds-1 cross-connect regenerator cords. these cords boost the -20 db ds-1 monitor signal level by 20 db to pro...319 dsx1p2a-06-lfp 6-foot (1.8 m) bantam-type duplex to 310-type duplex patch cord 106 700 909 dsx1p... |
| Description |
INTERCONNECTION DEVICE
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| File Size |
617.83K /
9 Page |
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Integrated Device Technology, Inc.
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| Part No. |
105RG278G025DT3B
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| OCR Text |
...098 ) no. 20 awg ( 0.032 ) ds 12.5 ( 0.492 ) 42.5 ( 1.673 ) 13.0 ( 0.512 ) 43.7 ( 1.721 ) 13.0 ( 0.512 ) 45.5 ( 1.791 ) 5.0 ...319 ) 16.5 ( 0.650 ) 36.0 ( 1.417 ) 7.5 ( 0.295 ) 3.5 ( 0.138 ) no. 20 awg ( 0.032 ) er ... |
| Description |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25 V, 2700 uF, THROUGH HOLE MOUNT RADIAL LEADED-3
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| File Size |
129.96K /
8 Page |
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NXP Semiconductors N.V.
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| Part No. |
BUK6C1R5-40C
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| OCR Text |
...r conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175 c - - 40 v i d drain current v gs =10v; t mb =25c; see figure ...319 a t mb =100c; v gs = 10 v; see figure 1 - 226 a i dm peak drain current t mb = 25 c; pulsed; t ... |
| Description |
N-channel TrenchMOS intermediate level FET 319 A, 40 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
183.27K /
13 Page |
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it Online |
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AVX, Corp.
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| Part No. |
NLJT476M006R1600
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| OCR Text |
...to the same reliability standar ds. voltagevstemperaturerating 100% 100% 67% 50% 33% 80% 80% 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% -55...319 287 128 319 287 128 nljw476m010#0400 w 47 10 5.9 47.0 400 3 520 468 208 208 187 83 nljc107m010#1... |
| Description |
CAPACITOR, NIOBIUM, 6.3 V, 47 uF, SURFACE MOUNT, 1411 CHIP, ROHS COMPLIANT
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| File Size |
112.57K /
2 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD65N55F3
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| OCR Text |
... diagram type v dss r ds(on) i d pw std65n55f3 55v <10.5m ? 65a 110w dpak 1 3 www.st.com order code part number marking package pa...319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions ar... |
| Description |
N-CHANNEL Power MOSFET
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| File Size |
422.98K /
13 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD20NF06L
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| OCR Text |
... diagram type v dss r ds(on) i d std20nf06l 60v <0.040 ? 24a std20nf06l-1 60v <0.040 ? 24a 1 3 3 2 1 dpak ipak www.st.com order co...319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions ar... |
| Description |
N-channel Power MOSFET
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| File Size |
417.00K /
14 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STD7NB20
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| OCR Text |
ds (on) = 0.3 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized n add s...319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions ar... |
| Description |
N-CHANNEL MOSFET
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| File Size |
412.79K /
10 Page |
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it Online |
Download Datasheet |
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