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Hitachi,Ltd.
Sanyo Denki Co., Ltd.
ZF Electronics, Corp.
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| Part No. |
AI3D5 AI3D9 AI3D7 AI3D8 AI3D6 AM2D8 AM2D55J FAM2D5 FAM2D12G FAM2D15J AI3D13G AI4D7 AI4D8 AI4D5 AI4D6 AI4D9 AM2D10 AM2D14G FAM2D75J FAI3D75J FAI4D75J AM3D75J AI4D9J AI3D9J AM2D9J AM3D9J FAM2D4 FAM2D6 FAM3D45J FAM3D55 FAM3D50J FAM3D45G AI4D60 FAM2D9 FAM3D8 FAM2D13 FAM2D14 FAM2D16 FAM3D6G FAM3D6J FAM2D9J AI4D6J AI4D16J FAI4D16J FAI4D6J FAM3D35J AM2D50G AM2D50J AM2D5G AM2D55G AM3D55G AI3D5G FAM3D55J AI3D55G FAM2D35J AI4D5G AI4D55G FAM3D15J FAM3D5J FAM2D9G FAM2D8G FAM2D8J FAM2D80G FAM2D80J AI3D40 AI3D40G AI4D45G AI3D45G AI4D40G AI3D40J AI3D45J AI4D40J FAI4D6G FAM2D60J FAI3D60G AM3D10J AI4D25J AI3D20G AM3D11J FAM3D35G
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| Description |
8 MINI MAP,PB/HALO FREE,NIPDAU LF,1.8V(SERIAL EE)
8 ULTRA THIN MINI MAP,PB/HALO FREE,1.8V(SERIAL EE)
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(LH); Number Of Pins: 3; No Of Circuits: 1; Comments: High-rugged type; V_CES (V): (max 1200)
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: SMQ; XJE016 JEITA: SC-61; Number of Pins: 4; Features: standard; Internal
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: SMQ; XJE016 JEITA: SC-61; Number of Pins: 4; Features: low VF; Internal
10MS, 8 EIAJ, IND TEMP, GREEN, 1.8V(SERIAL EE)
Stepping Motor Driver ICs; Function: Driver; Vopmax (Vm*): 34V (40V); Io (lpeak): 1.5A (1.8A); Excitation: 1/16 step; I/F: CLK input; Mixed Decay Mode: included; Package: HSOP36; RoHS Compatible: yes
250NS,32LCC,883C; LEV B FULLY COMPLIANT(EEPROM)
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; No Of Circuits: 2; Comments: High-rugged type; V_CES (V): (max 600)
Discrete IGBTs; Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; No Of Circuits: 2; Comments: High-rugged type; V_CES (V): (max 600)
Discrete IGBTs; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; No Of Circuits: New product; Comments: 2.9; V_CES (V): (max 400)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min -0.6) (max -1.1); R DS
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min 0.5) (max 1.2); R DS
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min 1.1) (max 1.8); R DS
Dual/Quad Zero-Drift Operational Amplifiers; Package: SSOP; No of Pins: 16; Temperature Range: -40° to 125°C
10MS, DIE, 1.8V, 11 MILS THICKNESS(SERIAL EE)
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: High current; Part
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: high breakdown
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: low VF; Internal
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: Low-noise; Part
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: High voltage SW; Part
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; V th (V): (min 0.8) (max 2.5); R DS On (Ω): 20 (max 50); drain-Source Voltage (V): (max 50); drain current (mA): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min 0.6) (max 1.1); R DS On (Ω): 5.2 (max 15); drain-Source Voltage (V): (max 20); drain current (mA): (max 100)
10MS, 8 TSSOP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE)
DIE/WAFER FORM(EEPROM)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; V th (V): (min 0.5) (max 1.1); R DS On (Ω): 0.140 (max 0.180) 0.120 (max 0.145); drain-Source Voltage (V): (max 30); drain current (mA): (max 500)
High-Frequency Schottky Barrier Diodes; Surface Mount Type: Y; Package: VESM; Number Of Pins: 3; Application Scope: VHF, UHF MIX; V F (V): 0.25; C T (pF): 0.6; V R (V): (max 4); Average Forward current I_F Max (mA): (max 25)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; V th (V): (min -0.6) (max -1.1); R DS On (Ω): 18 (max 45); drain-Source Voltage (V): (max -20); drain current (mA): (max -100)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; V th (V): (min 0.8) (max 2); R DS On (Ω): 0.33 (max 0.44) 0.23 (max 0.3); drain-Source Voltage (V): (max 60); drain current (mA): (max 2000)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min 0.8) (max 2.5); R DS On (Ω): 20 (max 50); drain-Source Voltage (V): (max 50); drain current (mA): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; V th (V): (min -0.8) (max -2.5); R DS On (Ω): 20 (max 50); drain-Source Voltage (V): (max -50); drain current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min -0.5) (max -1.5); R DS On (Ω): 20 (max 40); drain-Source Voltage (V): (max -20); drain current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min 2) (max 3.5); R DS On (Ω): 0.6 (max 1); drain-Source Voltage (V): (max 60); drain current (mA): (max 200)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min -0.5) (max -1.5); R DS On (Ω): 2.4 (max 4); drain-Source Voltage (V): (max -30); drain current (mA): (max -200)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min -0.8) (max -2.5); R DS On (Ω): 20 (max 50); drain-Source Voltage (V): (max -50); drain current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min -2) (max -3.5); R DS On (Ω): 1.3 (max 2); drain-Source Voltage (V): (max -60); drain current (mA): (max -200)
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
Logic IC 逻辑IC
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(LH); Number Of Pins: 3; No Of Circuits: 2; Comments: Non isolation package; V_CES (V): (max 900) 逻辑IC
90NS, VSOP, IND TEMP(EPROM) 逻辑IC
Dual -48V Supply and Fuse Monitor; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C 逻辑IC
45NS, SOIC, IND TEMP(EPROM) 逻辑IC
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; V th (V): (min 0.8) (max 1.5); R DS On (Ω): 4 (max 7); drain-Source Voltage (V): (max 30); drain current (mA): (max 100) 逻辑IC
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| File Size |
81.95K /
1 Page |
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Diodes, Inc.
TE Connectivity, Ltd.
ANACHIP[Anachip Corp]
ETC[ETC]
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| Part No. |
AP131 AP131-50Y AP131-15W AP131-15Y AP131-16W AP131-16Y AP131-17W AP131-17Y AP131-18W AP131-18Y AP131-19W AP131-19Y AP131-20W AP131-20Y AP131-21W AP131-21Y AP131-22W AP131-22Y AP131-23W AP131-23Y AP131-24W AP131-24Y AP131-25W AP131-25Y AP131-26W AP131-26Y AP131-27W AP131-27Y AP131-28W AP131-28Y AP131-29W AP131-29Y AP131-30W AP131-30Y AP131-31W AP131-31Y AP131-32W AP131-32Y AP131-33W AP131-33Y AP131-34W AP131-34Y AP131-35W AP131-35Y AP131-36W AP131-36Y AP131-37W AP131-37Y AP131-38W AP131-38Y AP131-39W AP131-39Y AP131-40W AP131-40Y AP131-41W AP131-41Y AP131-42W AP131-42Y AP131-43W AP131-43Y AP131-44W AP131-44Y AP131-45W AP131-45Y AP131-46W AP131-46Y AP131-47W AP131-47Y AP131-48W AP131-48Y AP131-49W AP131-49Y AP131-50W
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| Description |
1.5A Fast Ultra Low Dropout Linear Regulators 1.5A的快速超低压差线性稳压器
MOSFET; Transistor Polarity:P Channel; drain Source Voltage, Vds:-55V; Continuous drain current, id:75A; On-Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-220; Leaded Process Compatible:No 300mA低压差线性稳压器，带有关
MOSFET, N D-PAK;; Transistor type:MOSFET; Transistor polarity:N Channel; Voltage, Vds max:30V; Case style:TO-252 (D-Pak); current, id cont:63A; current, idm pulse:50A; Power, Pd:65.2W; Resistance, Rds on:0.0095R;
LED Lamp; Color:Blue; Luminous Intensity (MSCP):210ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
LED Lamp; Color:Blue; Luminous Intensity (MSCP):15ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
LED Lamp; Color:Blue; Luminous Intensity (MSCP):50ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:20V; Continuous drain current, id:85A; On-Resistance, Rds(on):3mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TO-220AB; Leaded Process Compatible:Yes
MOSFET, P TO-220MOSFET, P TO-220; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:TO-220AB; current, id cont:70A; current, idm pulse:240A; Power, Pd:187W; Resistance, Rds on:0.007R; Pin
SENSOR, OPTICAL, PHOTOTRANSISTOR O/P; RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:20V; Continuous drain current, id:85A; On-Resistance, Rds(on):0.003ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TO-220; Leaded Process Compatible:No
Optical Sensor (Switch) Reflective; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:32V
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:60V; Continuous drain current, id:70A; On-Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
LED Lamp; Color:Yellow; Luminous Intensity (MSCP):2.5; Viewing Angle:60; Forward current:7mA; Forward Voltage:2.2V; LED Color:Yellow; Leaded Process Compatible:Yes; Lens Style:(L x W x D) 3 x 2.8 x 1.65 mm; Lens Width:3mm
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:150V; Continuous drain current, id:85A; On-Resistance, Rds(on):21mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
Optical Sensor (Switch) Transmissive / Slotted Interrupter; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:70V
Optical Sensor (Switch) Reflective; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:70V
LED Lamp; Color:Yellow; Luminous Intensity (MSCP):50; Viewing Angle:60; Voltage Rating:2V; Forward current:30mA; Forward Voltage:2V; LED Color:Yellow; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:60V; Continuous drain current, id:75A; On-Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
LED Lamp; Color:Green; Luminous Intensity (MSCP):1.6; Viewing Angle:60; Forward current:7mA; Forward Voltage:1.9V; LED Color:Green; Leaded Process Compatible:Yes; Lens Style:(L x W x D) 3 x 2.8 x 1.65 mm; Lens Width:3
MOSFET, N TO-220AB
300mA Low Dropout Linear Regulator with Shutdown
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| File Size |
152.71K /
7 Page |
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it Online |
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ANACHIP[Anachip Corp]
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| Part No. |
AP1501A AP1501A-12 AP1501A-12K5 AP1501A-12K5A AP1501A-12K5L AP1501A-12K5LA AP1501A-12T5 AP1501A-12T5A AP1501A-12T5L AP1501A-12T5LA AP1501A-12T5R AP1501A-12T5RA AP1501A-12T5RL AP1501A-12T5RLA AP1501A-33 AP1501A-33K5 AP1501A-33K5A AP1501A-33K5L AP1501A-33K5LA AP1501A-33T5 AP1501A-33T5A AP1501A-33T5L AP1501A-33T5LA AP1501A-33T5R AP1501A-33T5RA AP1501A-33T5RL AP1501A-33T5RLA AP1501A-50 AP1501A-50K5 AP1501A-50K5A AP1501A-50K5L AP1501A-50K5LA AP1501A-50T5 AP1501A-50T5A AP1501A-50T5L AP1501A-50T5LA AP1501A-50T5R AP1501A-50T5RA AP1501A-50T5RL AP1501A-50T5RLA AP1501AK5 AP1501AK5A AP1501AK5L AP1501AK5LA AP1501AT5 AP1501AT5A AP1501AT5L AP1501AT5LA AP1501AT5R AP1501AT5RA AP1501AT5RL AP1501AT5RLA AP1501A-K5LA AP1501A-K5 AP1501A-K5A AP1501A-K5L AP1501A-T5 AP1501A-T5A AP1501A-T5L AP1501A-T5LA AP1501A-T5R AP1501A-T5RA AP1501A-T5RL AP1501A-T5RLA
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| Description |
Adj, 150 Khz, 5 A PWM buck DC/DC converter
150Khz, 5A PWM Buck DC/DC Converter
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Clear; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Clear; Lens Style:(H x Dia) 8.7 x 5.8 mm; Voltage Rating:5V
IR Emitting Diode; LED Color:Infrared; Mounting Type:Through Hole; Terminal Type:3 Pin Leaded; Color:Infrared; Lens Style:(H x Dia) 12.5 x 10.0 mm; Voltage Rating:5.5V
Leaded Process Compatible: Yes
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Blue Gray; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Blue Gray; Lens Style:(H x W) 8.7 x 5.8 mm; Voltage Rating:5V
MOSFET, P, SOT-23; Transistor type:MOSFET; current, id cont:0.185A; Resistance, Rds on:6R; Voltage, Vgs Rds on measurement:10V; Case style:SOT-23 (TO-236); current, id max:0.185A; current, idm pulse:.8A; Marking, SMD:6K; Pins, No. RoHS Compliant: Yes
MOSFET, P SOT-23MOSFET, P SOT-23; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SOT-23; current, id cont:0.58A; current, idm pulse:2A; Power, Pd:0.35W; Resistance, Rds on:0.65R; SMD:1; current, id
MOSFET; Transistor Polarity:P Channel; drain Source Voltage, Vds:-30V; Continuous drain current, id:-385mA; On-Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-236; drain Source On Resistance @ 10V:1.4ohm
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Infrared; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Infrared; Lens Style:(H x W) 8.7 x 5.8 mm; Voltage Rating:5V
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,270MA I(D),TO-226AA RoHS Compliant: Yes
IR EMITTER; Wavelength, typ:950nm; current, forward If:5mA; Angle, viewing:90(degree); Temperature, operating range:-25(degree C) to (degree C) RoHS Compliant: Yes
MOSFET; Transistor Polarity:P Channel; drain Source Voltage, Vds:-20V; Continuous drain current, id:-580mA; On-Resistance, Rds(on):650mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23
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| File Size |
179.81K /
11 Page |
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it Online |
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| Part No. |
PT7A7515 PT7A7513 PT7A7535 PT7A7531
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| Description |
MOSFET; drain Source Voltage, Vds:20V; Continuous drain current, id:67A; On-Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:D2PAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
3.08V Reset Active Low Supervisor
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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| File Size |
55.21K /
12 Page |
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it Online |
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SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
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| Part No. |
ST93C46A ST93C46AB1013TR ST93C46AB1TR ST93C46AB3013TR ST93C46AB3TR ST93C46AB6013TR ST93C46AB6TR ST93C46AM1013TR ST93C46AM1TR ST93C46AM3013TR ST93C46AM3TR ST93C46AM6013TR ST93C46AM6TR ST93C46C ST93C46CB1013TR ST93C46CB1TR ST93C46CB3013TR ST93C46CB3TR ST93C46CB6013TR ST93C46CB6TR ST93C46CM1013TR ST93C46CM1TR ST93C46CM3013TR ST93C46CM3TR ST93C46CM6013TR ST93C46CM6TR ST93C46T ST93C46TB1013TR ST93C46TB1TR ST93C46TB3013TR ST93C46TB3TR ST93C46TB6013TR ST93C46TB6TR ST93C46TM1013TR ST93C46TM1TR ST93C46TM3013TR ST93C46TM3TR ST93C46TM6013TR ST93C46TM6TR ST93C47AB1013TR ST93C47AB1TR ST93C47AB3013TR ST93C47AB3TR ST93C47AB6013TR ST93C47AB6TR ST93C47AM1013TR ST93C47AM1TR ST93C47AM3013TR ST93C47AM3TR ST93C47AM6013TR ST93C47AM6TR ST93C47C ST93C47CB1013TR ST93C47CB1TR ST93C47CB3013TR ST93C47CB3TR ST93C47CB6013TR ST93C47CB6TR ST93C47CM1013TR ST93C47CM1TR ST93C47CM3013TR ST93C47CM3TR ST93C47CM6013TR ST93C47CM6TR ST93C47T ST93C47TB1013TR ST93C47TB1TR ST93C47TB3013TR ST93C47TB3TR ST93C47TB6013TR ST93C47TB6TR ST93C47TM1013TR ST93C47TM1TR ST93C47TM3013TR ST93C47TM3TR ST93C47TM6013TR ST93C47TM6TR ST93C46CM1 2442 ST93C46 -ST93C47AB3013TR -ST93C46CM1 -ST93C46CM1013TR
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| Description |
From old datasheet system
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
MOSFET; drain Source Voltage, Vds:30V; Continuous drain current, id:3.4a; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:6-TSOP RoHS Compliant: Yes
MOSFET; Transistor Polarity:P Channel; drain Source Voltage, Vds:-12V; Continuous drain current, id:-4.5A; On-Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-TSOP; Leaded Process Compatible:No
MOSFET, P TSOP-6MOSFET, P TSOP-6; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:12V; Case style:TSOP-6; current, id cont:4.5A; current, idm pulse:20A; Power, Pd:1.1W; Resistance, Rds on:0.04R; SMD:1; Charge, Qrr typ
Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 1628 × 8 MICROWIRE的串行EEPROM
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 16128 × 8 MICROWIRE的串行EEPROM
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| File Size |
109.99K /
13 Page |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-C2597 BCP71 BCP71M
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| Description |
NPN Silicon AF Power Transistor (drain switch for RF power amplifier stages For AF driver and output stages High collector current)
From old datasheet system
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| File Size |
28.92K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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