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PANASONIC[Panasonic Semiconductor]
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| Part No. |
MN86074
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| OCR Text |
...MWE MOE MXD0 to 7
WE A11, 12 DE A0 to 10 I/O0 to 7
Application Circuit Example #2: Line lengths of 2049 to 4096 pixels
MN86074
MA0 to 10 MA11 MA13,14
Memory configuration: 64-Kbit SRAM x 2
MWE MOE MXD0 to 7
WE DE I/O0 to 7
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| Description |
Image Processing LSI
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| File Size |
46.11K /
7 Page |
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it Online |
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Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
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| Part No. |
MSA-0500 MSA-0500-G MSA-0500-GP4
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| OCR Text |
....49 0.60
1. S-parameters are de-embedded from 200 mil BeO package measured data using the package model found in the DEVICE MODELS sectio...Compression, Third Order Intercept Point, f = 1.0 GHz.
Figure 3. Output Power @ 1 dB Gain Compres... |
| Description |
Cascadable Silicon Bipolar MMIC Amplifier
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| File Size |
59.51K /
4 Page |
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it Online |
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N.A.
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| Part No. |
RFW102
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| OCR Text |
...r that functions as a spreading/de-spreading element in the system. The SAW correaltor is a 3-port passive device (described in this chapter...Compression points: o Input IP1 > -35dBm o * Noise figure: NF < 16dB * Image rejection > 30dB
Pea... |
| Description |
The RFW102 ism transceiver chipset is a shortrang
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| File Size |
489.37K /
23 Page |
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it Online |
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ANADIGICS[ANADIGICS, Inc]
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| Part No. |
AGB3312 AGB3312S24Q1
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| OCR Text |
...A
Figure 4: Gain vs. Frequency De-embedded 50W S-parameter (TA = +25 C, VSUPPLY = +5 V, ICC = 80 mA)
25 0
Figure 5: Isolation vs. Frequency De-embedded 50W S-parameter (TA = +25 C, VSUPPLY = +5 V, ICC = 80 mA)
20
-10
15
Mag... |
| Description |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
Gain Block Amplifiers
50з High Linearity Low Noise Internally Biased Wideband Gain Block
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| File Size |
284.89K /
8 Page |
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it Online |
Download Datasheet |
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