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  async. burst sync. a d Datasheet PDF File

For async. burst sync. a d Found Datasheets File :: 171    Search Time::3.375ms    
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    Alliance Semiconductor, Corp.
Part No. aS7C251MPFd18a-133BC aS7C251MPFd18a-133BCN
OCR Text ...the cycle is a read cycle. oe i async asynchronous output enable. i/o pins are driven when oe is active and the chip is in read mode. lbo istatic selects burst mode. when tied to v dd or left floating, device follows interleaved burst ...
Description 1M X 18 STaNdaRd SRaM, 3.8 ns, PBGa165 BGa-165
1M X 18 STaNdaRd SRaM, 3.8 ns, PBGa165 LEad FREE, BGa-165

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    Alliance Semiconductor, Corp.
Part No. aS7C251MPFS36a-167TQIN aS7C251MPFS32a-167BC aS7C251MPFS32a-167TQC aS7C251MPFS32a-167TQIN aS7C251MPFS36a-167TQC aS7C251MPFS36a-167BCN aS7C251MPFS36a-167TQCN aS7C251MPFS32a-167BCN aS7C251MPFS32a-167TQCN aS7C251MPFS32a-167BIN aS7C251MPFS36a-167BI aS7C251MPFS36a-167BIN
OCR Text ...the cycle is a read cycle. oe i async asynchronous output enable. i/o pins are driven when oe is active and chip is in read mode. lbo istatic selects burst mode. when tied to v dd or left floating, device follow s interleaved burst order...
Description 1M X 36 STaNdaRd SRaM, 7.5 ns, PQFP100 14 X 20 MM, LEad FREE, TQFP-100
1M X 32 STaNdaRd SRaM, 7.5 ns, PBGa165 BGa-165
1M X 32 STaNdaRd SRaM, 7.5 ns, PQFP100 14 X 20 MM, TQFP-100
1M X 32 STaNdaRd SRaM, 7.5 ns, PQFP100 14 X 20 MM, LEad FREE, TQFP-100
1M X 36 STaNdaRd SRaM, 7.5 ns, PQFP100 14 X 20 MM, TQFP-100
1M X 36 STaNdaRd SRaM, 7.5 ns, PBGa165 LEad FREE, BGa-165
1M X 32 STaNdaRd SRaM, 7.5 ns, PBGa165 LEad FREE, BGa-165
1M X 36 STaNdaRd SRaM, 7.5 ns, PBGa165 BGa-165

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    Alliance Semiconductor, Corp.
Part No. aS7C3128PFd32a-4TQC aS7C3128PFd36a-4TQC aS7C3128PFd32a-3.8TQC aS7C3128PFd32a-5TQC aS7C3128PFd36a-3.8TQC aS7C3128PFd36a-5TQC aS7C3128PFd32a aS7C3128PFd36a aS7C3128PFd32a-3.5TQC aS7C3128-3.5TQC
OCR Text ... is internally pulled high zz i async sleep. places device in low power mode; data is retained. connect to gnd if unused. parameter symbol min max unit power supply voltage relative to gnd v dd , v ddq C0.5 +4.6 v input voltage relative to...
Description 3.3V 128K x 36 pipeline burst synchronous SRaM, 166 MHz
3.3V 128K x 36 pipeline burst synchronous SRaM, 150 MHz
3.3V 128K x 36 pipeline burst synchronous SRaM, 133 MHz
3.3V 128K x 32 pipeline burst synchronous SRaM, 133 MHz
3.3V 128K x 32 pipeline burst synchronous SRaM, 166 MHz
128K X 32 STaNdaRd SRaM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 36 STaNdaRd SRaM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STaNdaRd SRaM, 3.8 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 32 STaNdaRd SRaM, 5 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 36 STaNdaRd SRaM, 3.8 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 36 STaNdaRd SRaM, 5 ns, PQFP100 14 X 20 MM, TQFP-100
3.3V 128K x 32/36 pipeline burst synchronous SRaM
3.3V 128K x 32 pipeline burst synchronous SRaM, 150 MHz
3.3V 128K x 32 pipeline burst synchronous SRaM, 100 MHz
3.3V 128K x 36 pipeline burst synchronous SRaM, 100 MHz

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    Alliance Semiconductor, Corp.
Part No. aS7C3256PFd18a-4TQC aS7C3256PFd16a-4TQC aS7C3256PFd18a aS7C3256PFd18a-3.5TQC aS7C3256PFd18a-3.8TQC aS7C3256PFd18a-5TQC aS7C3256PFd16a-5TQC aS7C3256PFd16a aS7C3256PFd16a-3.5TQC aS7C3256PFd16a-3.8TQC
OCR Text ...is internally pulled high zz i async sleep. places device in low power mode; data is retained. connect to gnd if unused. parameter symbol min max unit power supply voltage relative to gnd v dd , v ddq C0.5 +4.6 v input voltage relative to ...
Description 3.3V 256K x 16 pipeline burst synchronous SRaM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRaM, 100 MHz
256K X 18 STaNdaRd SRaM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STaNdaRd SRaM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
3.3V 256K x 16/18 pipeline burst synchronous SRaM
3.3V 256K x 18 pipeline burst synchronous SRaM, 166 MHz
3.3V 256K x 18 pipeline burst synchronous SRaM, 150 MHz
3.3V 256K x 18 pipeline burst synchronous SRaM, 133 MHz
3.3V 256K x 18 pipeline burst synchronous SRaM, 100 MHz
3.3V 256K x 16 pipeline burst synchronous SRaM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRaM, 166MHz

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    Alliance Semiconductor, Corp.
ALLIANCE SEMICONDUCTOR CORP
Part No. aS7C3256PFS18a-4TQC aS7C3256PFS16a-4TQC aS7C3256PFS16a-3.8TQC aS7C3256PFS16a aS7C3256PFS16a-3.5TQC aS7C3256PFS16a-5TQC aS7C3256PFS18a-3.5TQC
OCR Text ...is internally pulled high zz i async sleep. places device in low power mode; data is retained. connect to gnd if unused. parameter symbol min max unit power supply voltage relative to gnd v dd , v ddq C0.5 +4.6 v input voltage relative to ...
Description 3.3V 256K x 18 pipeline burst synchronous SRaM, 166 MHz
3.3V 256K x 16 pipeline burst synchronous SRaM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRaM, 166 MHz
256K X 18 STaNdaRd SRaM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STaNdaRd SRaM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STaNdaRd SRaM, 3.8 ns, PQFP100
3.3V 256K x 16/18 pipeline burst synchronous SRaM
3.3V 256K x 16 pipeline burst synchronous SRaM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRaM, 100 MHz

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    Alliance Semiconductor, Corp.
Part No. aS7C33128PFd36a-100TQI aS7C33128PFd32a-133TQC aS7C33128PFd32a-100TQC aS7C33128PFd36a-100TQC aS7C33128PFd32a-100TQI aS7C33128PFd36a-166TQC
OCR Text ... for pipelined operation. zz i async sleep. places device in low power mode. data is retained. connect to gnd if unused. absolute maximum ...burst adsc loads new address a1 a2 a3 t ch ce1 bw[a:d] as7c33128pfd32a as7c33128pfd36a ? 12/2/02, ...
Description 3.3V 128K X 32/36 pipeline burst synchronous SRaM 128K X 36 STaNdaRd SRaM, 12 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRaM 128K X 32 STaNdaRd SRaM, 10 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRaM 128K X 32 STaNdaRd SRaM, 12 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRaM 128K X 36 STaNdaRd SRaM, 9 ns, PQFP100

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    Alliance Semiconductor, Corp.
Part No. aS7C252MPFS18a-167BC
OCR Text ...the cycle is a read cycle. oe i async asynchronous output enable. i/o pins are driven when oe is active and chip is in read mode. lbo istatic selects burst mode. when tied to v dd or left floating, device follow s interleaved burst order...
Description 2M X 18 STaNdaRd SRaM, 7.5 ns, PBGa165 BGa-165

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    Alliance Semiconductor, Corp.
Part No. aS7C33128PFS18a-183TQI aS7C33128PFS18a-183TQC aS7C33128PFS16a-183TQC
OCR Text ...the cycle is a read cycle. oe i async asynchronous output enable. i/o pins are driven when oe is active and the chip is in read mode. lbo ...burst adsc loads new address a1 a2 a3 t ch ce1 bwa,b 3/4/02; v.1.4 alliance semiconductor p. 9 of ...
Description 128K X 18 STaNdaRd SRaM, 9 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 16 STaNdaRd SRaM, 9 ns, PQFP100 14 X 20 MM, TQFP-100

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    Alliance Semiconductor, Corp.
Part No. aS7C33256PFd18a-183TQI aS7C33256PFd18a-183TQC
OCR Text ...the cycle is a read cycle. oe i async asynchronous output enable. i/o pins are driven when oe is active and the chip is in read mode. lbo ...burst adsc loads new address a1 a2 a3 t ch ce1 bwa,b ? as7c33256pfd16a as7c33256pfd18a 3/8/02; v.1...
Description 256K X 18 STaNdaRd SRaM, 9 ns, PQFP100 14 X 20 MM, TQFP-100

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    Alliance Semiconductor, Corp.
Part No. aS7C33512PFS16a
OCR Text ...r for pipelined operation. zz i async sleep. places device in low power mode; data is retained. connect to gnd if unused. parameter symbol ...burst adsc loads new address a1 a2 a3 t ch ce1 bwa,b ? as7c33512pfs16a as7c33512pfs18a 3/13/01 ; ...
Description 3.3V 512K x 16/18 pipeline burst synchronous SRaM
3.3V 512K×16 Pipeline burst Synchronous SRaM(3.3V 512K×16流水线脉冲同步静态RaM) 3.312k × 16管道爆裂同步SRaM的电压(3.3V12k × 16流水线脉冲同步静态内存)

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For async. burst sync. a d Found Datasheets File :: 171    Search Time::3.375ms    
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