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Fairchild Semiconductor
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| Part No. |
IRFD9110
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| OCR Text |
...S ID = -250A, VGS = 0V, (Figure 9) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC VDS > ID(...7A, RG = 9.1, VGS =-10V, (Figures 16, 17), RL = 70 for VDSS = 50V RL = 56 for VDSS = 40V MOSFET Swit... |
| Description |
0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET
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| File Size |
90.61K /
7 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPN03N60C3
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| OCR Text |
...p. 700 3 0.5 1.26 3.8 10 max. 3.9 600 2.1 -
Unit V
V(BR)DS VGS=0V, ID=3.2A
A 1 70 100 1.4 nA
Gate-source leakage current
IGS...7A, RG=20
-
ns
Gate Charge Characteristics Gate to source charge Qgs
Gate to drain charge ... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS⑩ Power Transistor
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| File Size |
264.13K /
12 Page |
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it Online |
Download Datasheet |
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Advanced Power Electronics
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| Part No. |
4511GM
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| OCR Text |
...onductance v ds =10v, i d =7a - 9 - s i dss drain-source leakage current (t j =25 o c) v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - na q g tot... |
| Description |
Search --To AP4511GM
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| File Size |
133.49K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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