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  9.35mm Datasheet PDF File

For 9.35mm Found Datasheets File :: 2008    Search Time::1.891ms    
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    STMICROELECTRONICS[STMicroelectronics]
Part No. SD1490 2821
OCR Text ...T MATCHING OUT = 25 W MIN. WITH 9.0 dB GAIN .438 x .450 2LFL (M173) epoxy sealed ORDER CODE SD1490 BRANDING SD1490 PIN CONNECTION D...35mm Wire on 2mm Diameter S2 : 9 Turns of .35mm Wire on R1 S3 : 2 Turns of .8mm Wire on 4mm Diater S...
Description From old datasheet system
RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

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    IRG4PSC71KD

IRF[International Rectifier]
Part No. IRG4PSC71KD
OCR Text ...erse recovery 6.28 7.7 See Fig. 9,10,18 -- -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 5.0 , VCPK < 500V 87 -- TJ = 150C, See Fig. 11,18 104 -- IC = 60A, VCC = 480V ns 374 -- VGE = 15V, RG = 5.0 143 -- Energy losses include "tail" 8.5 -- mJ ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.83V, @Vge=15V, Ic=60A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V Vce(on)typ.=1.83V @Vge=15V Ic=60A)

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    IRG4PSC71K

IRF[International Rectifier]
Part No. IRG4PSC71K
OCR Text ...e reverse recovery 3.1 See Fig. 9,10,18 -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 5.0 -- TJ = 150C, See Fig. 10,11,18 -- IC = 60A, VCC = 480V ns -- VGE = 15V, RG = 5.0, -- Energy losses include "tail" -- mJ and diode reverse recovery -- nH...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A)

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    IRG4PSC71UD

IRF[International Rectifier]
Part No. IRG4PSC71UD
OCR Text ...verse recovery. --- mJ See Fig. 9, 10, 11, 18 7.2 --- TJ = 150C, See Fig. 9, 10, 11, 18 --- ns IC = 60A, VCC = 480V --- VGE = 15V, RG = 5.0 --- Energy losses include "tail" and --- mJ diode reverse recovery. --- nH Measured 5mm from package...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)

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    IRG4PSC71U

IRF[International Rectifier]
Part No. IRG4PSC71U
OCR Text ... V CC = 50V 5s PULSE WIDTH 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PSC71U 1...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)

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    VN1015 VN101501 VN101502 VN101503 VN101504

List of Unclassifed Manufacturers
ETC
N.A.
Part No. VN1015 VN101501 VN101502 VN101503 VN101504
OCR Text ...) (green) (black) .37 REF. (9.5mm) .975 (24.77mm) .139 (3.53mm) 3 2 O .129 (3.28mm) .250 (6.35mm) .050 Typ. (1.27mm) Part # Operating Voltage Range (VDC) Supply Current, mA max Output Lorem ipsum dolor sit amet,...
Description Magnetically activated digital vane switch in a rugged, overmolded plastic housing with three pins or 3-wire harness

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    BFP183TRW BFP183TW BFP183T

VISAY[Vishay Siliconix]
Infineon Technologies AG
Part No. BFP183TRW BFP183TW BFP183T
OCR Text ...S21e2 Min 6 Typ 7.2 8 0.4 0.3 0.9 0.9 1.2 1.8 21 12.5 16.5 Max Unit GHz GHz pF pF pF dB dB dB dB dB dB Document Number 85014 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (6) BFP183T/BFP183TW/BFP183TRW Vishay Telefun...
Description From old datasheet system
Silicon NPN Planar RF Transistor

File Size 96.70K  /  6 Page

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    ECG003 ECG003B ECG003B-G ECG003B-PCB

WJ Communications
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. ECG003 ECG003B ECG003B-G ECG003B-PCB
OCR Text ...ns: T = 25 C, Supply Voltage = +9 V, Device Voltage = +7.2V, Rbias = 16, 50 System. +34 6.7 7.6 1. Test conditions unless otherwis...35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add a...
Description InGaP HBT Gain Block InGaP HBT增益模块

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    VISAY[Vishay Siliconix]
Part No. MCL4151
OCR Text ...ue, Fig. 1, 35mm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA Value 500 Unit K/W Document Number 85567 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (4) MCL4151 Vishay Telefunken Electrical Characteris...
Description From old datasheet system
Silicon Epitaxial Planar Diode

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    S860T

Vishay Telefunken
VISAY[Vishay Siliconix]
Part No. S860T
OCR Text ...st Conditions f = 900 MHz f = 1.9 GHz f = 900 MHz f = 1.9 GHz 7 mV input voltage, f = 900 MHz 7 mV input voltage, f = 1.9 GHz Symbol Gp Gp f3dB F F IM3 IM3 Vd Min 6 5 Typ 8.5 7.5 2.5 5.5 6.5 40 45 1.8 Max Unit dB dB GHz dB dB dB dB V www...
Description BIPMIC ? Cascadable Silicon Bipolar Amplifier
From old datasheet system
BIPMIC - Cascadable Silicon Bipolar Amplifier

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For 9.35mm Found Datasheets File :: 2008    Search Time::1.891ms    
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