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  9-ghz Datasheet PDF File

For 9-ghz Found Datasheets File :: 22353    Search Time::1.281ms    
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    Mimix Broadband, Inc.
Part No. PB-CGB7008-SC-0000 PB-CGB7008-SP-0000
OCR Text ...loss pout @ -45 dbc, acp is-95, 9 forward channels +25 -40 to +85 +25 -40 to +85 +25 -40 to +85 +25 -40 to +85 +25 -40 to +85 +25 -40 to +85...ghz frequency range, mimix?s broadband, cascadable, gain block amplifiers are ideal solutions for ...
Description CGB7008-SC Matched Gain Block Amplifier CGB7008钪匹配增益模块放大器

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    ATF-36163 ATF-36163-BLK ATF-36163-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text ...cal at 4 GHz * Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz * Maximum Available Gain: 11 dB Typical at 12 GHz 17 dB Typical at 4 GHz * Low Cost Surface Mount Small Plastic Package * Tape-and-Reel Packaging Option Avail...
Description 1.5-18 GHz Surface Mount Pseudomorphic HEMT

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    ATF-44101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-44101
OCR Text ...t @ 1 dB Gain Compression: VDS =9 V, IDS = 500 mA 1 dB Compressed Gain: VDS = 9 V, IDS = 500 mA Efficiency @ P1dB: VDS = 9 V, IDS = 500 mA T...GHz f = 6.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 800 -5.4 Min. 31.0 7.5 ...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-45101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45101
OCR Text ... @ 1 dB Gain Compression: VDS = 9 V, IDS = 250 mA 1 dB Compressed Gain: VDS = 9 V, IDS = 250 mA Efficiency @ P1dB: VDS = 9 V, IDS = 250 mA T...GHz f = 8.0 GHz f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 400 -5.4 Min. 28.0 9.0 ...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-45171

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45171
OCR Text ... @ 1 dB Gain Compression: VDS = 9 V, IDS = 250 mA 1 dB Compressed Gain: VDS = 9 V, IDS = 250 mA Efficiency @ P1 dB: VDS = 9 V, IDS = 250 mA ...GHz f = 8.0 GHz f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 400 -5.4 Min. 28.0 9.5 ...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-46101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-46101
OCR Text ... @ 1 dB Gain Compression: VDS = 9 V, IDS = 125 mA 1 dB Compressed Gain: VDS = 9 V, IDS = 125 mA Efficiency @ P1dB: VDS = 9 V, IDS = 125 mA T...GHz f = 8.0 GHz f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 200 -5.4 Min. 25.0 9.0 ...
Description 2-10 GHz Medium Power Gallium Arsenide FET

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    ATF-46171

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-46171
OCR Text ... @ 1 dB Gain Compression: VDS = 9 V, IDS = 125 mA 1 dB Compressed Gain: VDS = 9 V, IDS = 125 mA Efficiency @ P1dB: VDS = 9 V, IDS = 125 mA T...GHz f = 8.0 GHz f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 200 -5.4 Min. 25.0 10.0...
Description 2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)

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    BFS48107

Infineon Technologies AG
Part No. BFS48107
OCR Text ...12 ma ? f t = 8 ghz, f = 0.9 db at 900 mhz ? two (galvanic) internal isolated transistors in one package ? for orientation in reel see package information below ? pb-free (rohs compliant) package 1) ? qualified according aec ...
Description NPN Silicon RF Transistor

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    BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114 BAT14-124 BAT14-4 Q62702-D1019 Q62702-D1

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
INFINEON TECHNOLOGIES AG
Part No. BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114 BAT14-124 BAT14-4 Q62702-D1019 Q62702-D1036 Q62702-D1066 Q62702-D1005 Q62702-D1026 Q62702-D1041 Q62702-D1051 Q62702-D1056 Q62702-D1061 Q62702-P1139
OCR Text ...6 GHz BAT 14-044 BAT 14-064 f = 9.3 GHz BAT 14-074 BAT 14-094 f = 16 GHz BAT 14-104 BAT 14-114 BAT 14-124 Differential forward resistance IF = 10/50 mA rf BAT 14-014 BAT 14-034 BAT 14-044 BAT 14-064 BAT 14-074 BAT 14-094 BAT 14-104 BAT 14-1...
Description Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) 硅肖特基二极管(培养基检测器和调音台的应用气密陶瓷封装垒二极管)
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters 砷化镓红外Lumineszenzdioden砷化镓红外辐射器

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    Mimix Broadband, Inc.
Part No. PB-CGB7009-SC-0000 PB-CGB7009-SP-0000
OCR Text ...35.3 dbm output ip3 @ 850 mhz 3.9 db noise figure @ 850 mhz 16.8 db gain @ 850 mhz 19.2 dbm p1db @ 850 mhz low performance variation over te...ghz frequency range, mimix?s broadband, cascadable, gain block amplifiers are ideal solutions for ...
Description DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 直流6.0千兆赫的InGaP HBT,MMIC的或包装,匹配增益模块放大器

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