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DAESAN[Daesan Electronics Corp.]
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| Part No. |
1N4937 1N4933 1N4934 1N4935 1N4936
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| OCR Text |
...Y TIME CHARACTERISTIC
1 8 2
3.8mh/1.4W
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
R1
115Va 60Hz
10K 2W
3 7
30W 50W NON-INDUCTIVE UNIT UNDER TEST
Trr
Si(t) di/dt=50A/uS
6 5
C.PCLARE HPG 1002
4
1.0Adc FROM CONSTANT ... |
| Description |
CURRENT 1.0 Ampere VOLTAGE 50 to 600 Volts
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| File Size |
170.41K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SK3043
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| OCR Text |
...
*
TC = 25C Ta = 25C
L = 8mh, IL = 5A, VDD = 50V, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage D... |
| Description |
Silicon N-Channel Power F-MOS FET
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| File Size |
44.70K /
3 Page |
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it Online |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090BFLL03
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| OCR Text |
...0
4 Starting Tj = +25C, L = 16.8mh, RG = 25, Peak IL = 12A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID12A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery measured... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
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| File Size |
94.01K /
5 Page |
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it Online |
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DELTA[Delta Electronics, Inc.]
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| Part No. |
DT32-2039AT DT32-2010T DT32-2014T DT32-2023AT
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| OCR Text |
...): 1.27:1 2% @10KHz 0.1V SEC: 1.8mh Min. @10KHz 0.1V SEC: 7.5uH Max. @100KHz 0.1V PRI: 2.20 SEC: 2.20 Max. Max. DT32-2014T (PRI:SEC): 1:1 1% @10KHz 0.1V PRI: 5.0mH 10% @10KHz 0.1V PRI: 18uH Max. @100KHz 0.1V PRI: 3.0 SEC: 3.0 Max. Max.
1... |
| Description |
ADSL TRANSFORMER
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| File Size |
57.23K /
1 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA19N20C
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| OCR Text |
...m junction temperature 2. L = 1.8mh, IAS = 19.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 21.8A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating t... |
| Description |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
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| File Size |
868.89K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA7N65C
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| OCR Text |
...mum junction temperature 2. L = 8mh, IAS = 7A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperat... |
| Description |
650V N-Channel MOSFET
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| File Size |
714.37K /
8 Page |
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it Online |
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Price and Availability
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