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				http:// MOTOROLA[Motorola, Inc]
Part No.	MPC9230
OCR Text	... the VCO output frequency to be 8M times the reference frequency by adjusting the VCO control voltage. Note that for some values of M (eithe...bit shift register. The shift register shifts once per rising edge of the S_CLOCK input. The serial ...
Description	800 MHz Low Voltage PECL Clock Synthesizer 800 MHz Low Voltage PECL Clock Synthesizer
File Size	292.31K / 16 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC58V64BDC
OCR Text	8M 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia DESCRIPTION ) The TC58V64B is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes 16 pages 1024 b...
Description	64-MBIT (8M x 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia ) 64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM) 64-MBIT (8M x 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
File Size	341.43K / 33 Page	View it Online	Download Datasheet

				Hynix Semiconductor http://
Part No.	HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT-D4_D43 HY5DU56422BT-D4 HY5DU56822BT-D HY5DU56822BT-D4/D43 HY5DU56422BT-D4/D43 HY5DU56422BT-H HY5DU56422BT-M HY5DU56422BT-K
OCR Text	..., A11 BA0, BA1 A10 8K 32Mx8 8M x 8 x 4banks A0 - A12 A0-A9 BA0, BA1 A10 8K Rev. 0.4 / Aug. 2003 4 HY5DU56422BT-D4/D43 HY5DU5682...bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. ...
Description	DDR SDRAM - 256Mb 256M-P DDR SDRAM IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
File Size	214.36K / 32 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K7Q161862 K7Q161862B K7Q163662B
OCR Text	...,5E-7E, 6F,6G,6H,6J,6K,5L-7L,4M-8M,4N,8N 10R 11R 2R 1R 3A,7A,1B,5B,9B,10B,1C,2C,9C,1D,9D, 10D,1E,2E,9E,1F,9F,10F,1G,9G,10G,1H,1J,2J,9J,1K, 2...bit sequential for both read and write operations. Synchronous pipeline read and early write enable ...
Description	512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36
File Size	333.83K / 17 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	RC28F640J3A-120 RC28F320J3 E28F128J3A RC28F128J3 E28F640J3A-120 RC28F128J3A-150 RC28F320J3A-110 28F128 28F128J3A E28F128J3A-150 E28F320J3A-110
OCR Text	...e Effective Programming Time 12.8M Total Min. Erase Cycles (128 Mbit) 6.4M Total Min. Erase Cycles (64 Mbit) 3.2M Total Min. Erase Cycles (3...bit-per-cell technology, second generation Intel(R) StrataFlashTM memory products provide 2X the bit...
Description	3 Volt Intel StrataFlash Memory
File Size	317.48K / 58 Page	View it Online	Download Datasheet

				SPANSION[SPANSION]
Part No.	S71PL129JB S71PL129JB0BAW9Z0 S71PL129JA0BAI9P0 S71PL129JA0BAW9P0 S71PL129JA0 S71PL129JA0BAI9B0 S71PL129JA0BAI9B2 S71PL129JA0BAI9B3 S71PL129JA0BAI9P2 S71PL129JA0BAI9P3 S71PL129JA0BAI9U0 S71PL129JA0BAI9U2 S71PL129JA0BAI9U3 S71PL129JA0BAI9Z0 S71PL129JA0BAI9Z2 S71PL129JA0BAI9Z3 S71PL129JA0BAW9B0 S71PL129JA0BAW9B2 S71PL129JA0BAW9B3 S71PL129JA0BAW9P2 S71PL129JA0BAW9P3 S71PL129JA0BAW9U0 S71PL129JA0BAW9U3 S71PL129JA0BAW9Z0 S71PL129JA0BAW9Z2 S71PL129JA0BAW9Z3 S71PL129JA0BFI9B0 S71PL129JA0BFI9B2 S71PL129JA0BFI9B3 S71PL129JA0BFI9P0 S71PL129JB0BAW9U0 S71PL129JB0BAW9U2 S71PL129JB0BAW9U3 S71PL129JC0BFW9Z3 S71PL129JA0BAW9U2 S71PL129JA0BFI9P2 S71PL129JA0BFI9P3 S71PL129JA0BFI9U0 S71PL129JA0BFI9U2 S71PL129JA0BFI9U3 S71PL129JA0BFI9Z0 S71PL129JA0BFI9Z2 S71PL129JA0BFI9Z3 S71PL129JA0BFW9B0 S71PL129JA0BFW9B2 S71PL129JA0BFW9B3 S71PL129JA0BFW9P0 S71PL129JA0BFW9P2 S71PL129JA0BFW9P3 S71PL129JA0BFW9U0 S71PL129JA0BFW9U2 S71PL129JA0BFW9U3 S71PL129JA0BFW9Z0 S71PL129JA0BFW9Z2 S71PL129JA0BFW9Z3 S71PL129JB0 S71PL129JB0BAI9B0 S71PL129JB0BAI9B2 S71PL129JB0BAI9B3 S71PL129JB0BAI9P0 S71PL129JB0BAI9P2 S71PL129JB0BAI9P3 S71PL129JB0BAI9U0 S71PL129JB0BAI9U2 S71PL129JB0BAI9U3 S71PL129JB0BAI9Z0 S71PL129JB0BAI9Z2 S71PL129JB0BA
OCR Text	8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION Distinctive Characteristics MCP Features Power supply voltage of 2.7 to 3.1...
Description	Stacked Multi-Chip Product (MCP) Flash Memory
File Size	1,553.81K / 149 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC N.A. List of Unclassifed Manufacturers
Part No.	GLT625608 GLT625608-10FB GLT625608-70FB GLT625608-70TC GLT625608-10J3 GLT625608-10TC GLT625608-10TS GLT625608-70J3 GLT625608-70TS
OCR Text	... 40 : 4M(EDO) 41 : 4M(FPM) 80 : 8M(EDO) 81 : 8M(FPM) 160 : 16M(EDO) 161 : 16M(FPM) 08 CONFIG. 04 : x04 08 : x08 16 : x16 32 : x32 I - 10 TC SPEED -SRAM 12 : 12ns 15 : 15ns 20 : 20ns 70 : 70ns -DRAM 35 : 35ns 40 : 40ns 45 : 45ns 50 :...
Description	32K x 8 SLOW SPEED CMOS STATIC RAM 32K的8低速的CMOS静态RAM Time-Delay Relay; Contacts:SPST-NO; Time Range:1 sec. to 100 sec.; Timing Function:Delay-On-Release; Contact Carry Current:2A; Relay Terminals:Quick Connect; Supply Voltage:120VAC Time-Delay Relay; Contacts:SPST-NO; Time Range:1 to 100 min.; Timing Function:Delay-On-Make; Contact Carry Current:1A; Relay Terminals:Quick Connect; Supply Voltage:120VAC
File Size	1,000.02K / 13 Page	View it Online	Download Datasheet

				HYNIX
Part No.	HY5DU56162 HY5DU561622CT
OCR Text	..., A11 BA0, BA1 A10 8K 32Mx8 8M x 8 x 4banks A0 - A12 A0-A9 BA0, BA1 A10 8K 16Mx16 4M x 16 x 4banks A0 - A12 A0-A8 BA0, BA1 A10 8K ...bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. ...
Description	256M-P DDR SDRAM
File Size	372.02K / 35 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C-L1L K4S511632C-L75 K4S511632C-L7C K4S511632C-KC_L75 K4S511632C-KC_L1H K4S511632C-KC_L1L K4S511632C-KC_L7C K4S511632C-KC/L1H K4S511632C-KC/L1L K4S511632C-KC/L75 K4S511632C-KC/L7C
OCR Text	8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 Samsung shall not offer for sale or sell either directly or throug...bit write operation * DQM for masking * Auto & self refresh * 64ms refresh period (8K Cycle) Part No...
Description	8M x 16Bit x 4 Banks Synchronous DRAM Data Sheet DDP 512Mbit SDRAM 12兆内
File Size	130.41K / 11 Page	View it Online	Download Datasheet

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