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8.3-9.5a Datasheet PDF File

For 8.3-9.5a Found Datasheets File :: 46244 Search Time::4.438ms
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				DIODES[Diodes Incorporated]
Part No.	2N7002T
OCR Text	...0 1.70 0.10 0.80 0.30 0.20 0.65 8 Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 3/4 Mechanical Data Case: SOT-523, Molded Plastic Case Material UL Flammability Rating: 94V-0 Moisture sensitivity: Level 1 per J-STD-020A T...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	83.69K / 3 Page	View it Online	Download Datasheet

				Diodes Inc. DIODES[Diodes Incorporated]
Part No.	2N7002V 2N7002V-7 2N7002VA-7
OCR Text	...5 Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30448 Rev. 3 - 2 2 of 3 www.diodes.com 2N7002V/VA 250 NEW PRODUCT Pd, POWER DISSIPATION (mW) 200 150 100 50 0 -50 0 50 ...
Description	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	67.17K / 3 Page	View it Online	Download Datasheet

				Diodes Inc. DIODES[Diodes Incorporated]
Part No.	2N7002W
OCR Text	...002W 1.0 NEW PRODUCT 0.8 ID, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 Tj = 25C 6 5 VGS = 5.0V 5.5V ...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	67.04K / 3 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SC2411K 2SC1741S 2SC4097
OCR Text	...3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLE...3 Grounded emitter output characteristics() 2SC2411K / 2SC4097 / 2SC1741S Transistors COLL...
Description	Transistors > Small Signal Bipolar Transistors(up to 0.6W) Medium Power Transistor (32V, 0.5A) Medium Power Transistor (32V 0.5A) Medium Power Transistor (32V/ 0.5A)
File Size	72.43K / 3 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SC4557
OCR Text	... 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 50 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.75 IB2 (A) -1.5 ton (s) 1max tstg (s) 5max tf (s) 0.5max 3.35 B C E Wei...
Description	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	24.62K / 1 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ317
OCR Text	...= 0 VGS = 6.5 V, VDS = 0 VDS = -8 V, VGS = 0 I D = -100 A, VDS = -5 V I D = -0.5 A1, VGS = -2.2 V I D = -1 A1, VGS = -4 V I D = -1 A*1, VD...3 D Operation in this Area is limited by RDS(on) PW = 1 ms 1 shot 1.5 -1 -0.3 -0.1 1.0...
Description	Silicon P-Channel MOS FET
File Size	37.77K / 8 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Toshiba Semiconductor
Part No.	2SJ339
OCR Text	...2063A [2SJ339] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	39.40K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ456
OCR Text	...ions unit : mm 2128 [2SJ456] 8.2 7.8 6.2 3 8.4 10.0 0.4 0.2 Low ON-resistance. High-speed diode incorporated. Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable pac...
Description	Ultrahigh-Speed Switching Applications
File Size	29.04K / 4 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SJ475-01
OCR Text	...ch) C [F] VDS [V] 8 VGS [V] IAV [A] 7 9 VDS [V] Qg [nC] starting Tch [C] Maximum Avalanche Energy vs. starting Tch EAV=f(starting Tch); VCC=-24V; IAV>=-25A Safe Operation Area ID=f(VDS)...
Description	FAP-III Series
File Size	296.96K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	...ssipation Drain Current 0.8 -1 -0.3 -0.1 = (1 10 sh ms ot ) 1 m s 0.4 Operation in this area is limited by R DS(on) Ta = 25 C -1 n tio ra pe O -0.03 -0.01 0 50 100 150 Ta (C) 200 Ambient Temperature -0.01 -0.03 ...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

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