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6w channel Datasheet PDF File

For 6w channel Found Datasheets File :: 959 Search Time::0.922ms
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				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT10040B2VR APT10040LVR
OCR Text	...VGS = 15V VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX UNIT Amps Volts ns C 25 100 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/s) ...
Description	POWER MOS V 1000V 25A 0.400 Ohm Power MOS V is a new generation of high voltage N-channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	38.07K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10045B2FLL APT10045LFLL
OCR Text	...SS ID = ID [Cont.] @ 25C RG = 0.6w MIN TYP MAX UNIT pF 4335 720 129 159 19 101 10 7 32 8 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	53.79K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10045B2LL APT10045LLL
OCR Text	...A I 112 VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 23 92 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery C...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	55.81K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10045JFLL
OCR Text	...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 21 84 1.3 18 300 600 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 1.7 4.8 12 19 Tj = 125C Tj = 25C Tj ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	58.41K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10045JLL
OCR Text	...DSS ID = ID[Cont.] @ 25C RG = 0.6w MIN TYP MAX UNIT 4335 720 129 159 19 101 10 7 32 8 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS A...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	56.46K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT20M18LVFR APT20M18B2VFR
OCR Text	...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 100 400 1.3 5 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C 230 450 Tj = 125C 0.9 3.4 11 20 Tj = ...
Description	Power MOS V is a new generation of high voltage N-channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET IC,Normally-Open Panel-Mount Solid-State Relay,1-channel,M:HL066HD4.3 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 200V 100A 0.018 Ohm
File Size	39.91K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT20M18LVR APT20M18B2VR
OCR Text	...VGS = 15V VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 5 ns MAX UNIT Amps Volts ns C 100 400 1.3 (Body Diode) 2 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100...
Description	ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET Power MOS V is a new generation of high voltage N-channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.018 Ohm
File Size	38.79K / 2 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MMBFJ175LT1
OCR Text	... DEVICE MARKING MMBFJ175LT1 = 6w ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate - Source Breakdown Voltage (VDS = 0, ID = 1.0 A) Gate Reverse Current (VDS =...
Description	JFET Chopper
File Size	76.39K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	MMBFJ175 MMBFJ176 MMBFJ177 J174 J176 J175 J177
OCR Text	... G TO-92 D SOT-23 Mark: 6w / 6X / 6Y S P-channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* ...
Description	P-channel Switch
File Size	57.34K / 5 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	STK4102II
OCR Text	6w + 6w min, THD = 0.4%) Features * The STK4102II series (STK4102II) and STK4101V series (high-grade type) are pin-compatible in the out...channel AF Power Amplifier Sample Printed Circuit Pattern for Application Circuit (Cu-foiled side...
Description	AF Power Amplifier (Split Power Supply) (6w 6w min, THD = 0.4%)
File Size	270.26K / 8 Page	View it Online	Download Datasheet

For 6w channel Found Datasheets File :: 959 Search Time::0.922ms
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