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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...S = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V -...46 (.0 18) M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ... for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 8.0 5.1 32 125 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) ...46 (.018) 0.36 (.014) 2.54 (.100) 2X N OT ES : 1 DIMEN S IONING & T OLE R AN CIN G PE R A NS I...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ... 12) VDD = -50V, ID -25A, RG = 6.8, RL = 2.0, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature MIN -100 -2 -25 4 - TYP 0.09 10 16 110 65 46 82 14 42 2400 850 400 5.0 MAX -4 -25 -250 100 ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...A D D D D VDSS = 30V 3 6 4 5 RDS(on) = 0.030 T o p V ie w Recommended upgrade: IRF7403 or IRF7413 Lower profile/smalle...46 RG = 6.0, VGS = 10V 34 RD = 25 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 9 Source...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...0V G S RDS(on) = 0.48 ID = -6.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn...46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C I...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ... = -80V 32 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ID = -8.4A ns --- RG = 9.1 --- RD = 6.2, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratin...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...for 10 seconds Mounting torque, 6-32 or M3 screw Max. -14 -10 -56 79 0.53 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) 10 l...46 4.5 7.5 760 260 170 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C,...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ...2 2 VDSS = -30V 3 4 6 5 RDS(on) = 0.25 Description Fifth Generation HEXFETs from International Rectifier utilize advan...46 ( .255 ) 1.78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking Information SO8 E X A M P LE...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ... 2 7 VDSS = 30V 3 6 4 5 RDS(on) = 0.10 T o p V iew Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller ...46 ( .255 ) 1.78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking Information SO8 E X A M P LE...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ... RDS(on) = 0.50 G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi...46 (.018) 1.39 (.055) 1.14 (.045) MINIMUM RECO MM ENDED F OO TP RINT 11.43 (.450) NO TE S: ...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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