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645 Datasheet PDF File

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				Toshiba Semiconductor
Part No.	2SC570306 2SC5703
OCR Text	...s epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the relia...
Description	Silicon NPN Epitaxial Type High-Speed Switching Applications
File Size	132.97K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SC571306 2SC5713
OCR Text	...s epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the relia...
Description	Silicon NPN Epitaxial Type High-Speed Switching Applications
File Size	134.02K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SC571406 2SC5714
OCR Text	...s epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the relia...
Description	Silicon NPN Epitaxial Type
File Size	134.56K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SC578406
OCR Text	...s epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the relia...
Description	Silicon NPN Epitaxial Type High-Speed Switching Applications
File Size	133.40K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SC5906
OCR Text	...s epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the relia...
Description	Silicon NPN Epitaxial Type High-Speed Switching Applications
File Size	159.85K / 5 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP4NK50ZFP STP4NK50Z STD4NK50Z STD4NK50Z-1 STD4NK50 STD4NK50ZT4
OCR Text	...0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 ...
Description	N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET N沟道500V - 2.4ohm -A TO-220/TO-220FP/DPAK/IPAK齐保护的SuperMESH⑩功率MOSFET N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET N沟道500V - 2.4ohm -3A TO-220/TO-220FP/DPAK/IPAK齐保护的SuperMESH⑩功率MOSFET N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?Power MOSFET N-CHANNEL 500V - 2.4 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET N-Channle MOSFET N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESHPower MOSFET N-CHANNEL 500V - 2.4 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 500V - 2.4W - 3A TO-220/TO-220FP/DPAK/IPAK
File Size	663.07K / 13 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J117TU
OCR Text	...4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on an FR4 board. (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm2 ) Note: UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Charact...
Description	Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
File Size	126.38K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J118TU
OCR Text	...4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on an FR4 board. (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm2 ) Note: 1: Gate 2: Source 3: Drain UFM JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characte...
Description	Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
File Size	126.01K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J304T
OCR Text	...4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS ...
Description	Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications
File Size	232.85K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J305T
OCR Text	...4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Note: JEDEC JEITA TOSHIBA 2-3S1A Weight: 10 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current G...
Description	Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
File Size	162.87K / 6 Page	View it Online	Download Datasheet

For 645 Found Datasheets File :: 7421 Search Time::0.969ms
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