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  5.08 16 Datasheet PDF File

For 5.08 16 Found Datasheets File :: 63895    Search Time::3.719ms    
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    2SJ247

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ247
OCR Text ...drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220AB D G 1 2 3 1....08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 18.5 0.5 15.0 0.3 1.27 2.7 MAX 14...
Description Silicon P-Channel MOS FET

File Size 46.46K  /  8 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text ...-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter O...08 VGS = -2.5 V -1, -2 A -5 A -1 A -2 A 0.04 0 -40 -4 V 0 40 80 120 160 Case Temperature Tc...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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    2SJ451

Hitachi Semiconductor
Part No. 2SJ451
OCR Text ...n-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G ...08 -0.08 -0.04 -0.04 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 -1...
Description    Silicon P-Channel MOS FET

File Size 39.56K  /  8 Page

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    2SJ452

HITACHI[Hitachi Semiconductor]
Part No. 2SJ452
OCR Text ...n-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G ...08 VGS = -2 V Pulse Test 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -0.08 Tc = 75C ...
Description    Silicon P-Channel MOS FET

File Size 39.33K  /  8 Page

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    2SJ456

SANYO[Sanyo Semicon Device]
Part No. 2SJ456
OCR Text ...2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 0.7 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cur...
Description    Ultrahigh-Speed Switching Applications

File Size 29.04K  /  4 Page

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    2SJ466

SANYO[Sanyo Semicon Device]
Part No. 2SJ466
OCR Text ...2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 2.5 0.7 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allow...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 38.71K  /  4 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ... C D 30 -100 -50 -20 -10 -5 -2 -1 -0.5 0 s 1 m s = 20 10 m (1 s ot 10 Operation in this area is limited by...08 I D = -20 A V GS = -4 V 0.06 -5, -10 A 0.04 -5, -10, -20 A -10 V Pulse Test 0 40 80 120 Cat...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ483

HITACHI[Hitachi Semiconductor]
Part No. 2SJ483
OCR Text ...8 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92MOD. D G 3 S ...08 0.12 5 630 390 135 15 70 65 60 -1.0 60 Max -- -- -10 10 -2.0 0.11 0.17 -- -- -- -- -- -- -- -- --...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.73K  /  9 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ...s -50 -10 V -8 V I D (A) -40 -4.5 V -6 V -5 V -4 V -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 Case Temperature Tc (C) 160 -5, -10 A 100 30 10...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...r Min -60 20 -- -- -1.0 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.08 0.11 11 850 420 110 12 75 125 75 -1.1 70 Max -- -- -10 10 -2.0 0.10 0.16 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = -...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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